SE8301366D0 - PHOTOVOLIC DON - Google Patents

PHOTOVOLIC DON

Info

Publication number
SE8301366D0
SE8301366D0 SE8301366A SE8301366A SE8301366D0 SE 8301366 D0 SE8301366 D0 SE 8301366D0 SE 8301366 A SE8301366 A SE 8301366A SE 8301366 A SE8301366 A SE 8301366A SE 8301366 D0 SE8301366 D0 SE 8301366D0
Authority
SE
Sweden
Prior art keywords
layer
highly reflective
tin oxide
reflective material
transparent conductor
Prior art date
Application number
SE8301366A
Other languages
Swedish (sv)
Other versions
SE457300B (en
SE8301366L (en
Inventor
V Cannella
D D Allred
R Mohr
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of SE8301366D0 publication Critical patent/SE8301366D0/en
Publication of SE8301366L publication Critical patent/SE8301366L/en
Publication of SE457300B publication Critical patent/SE457300B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A back reflector for a photovoltaic device includes a layer of highly reflective material (114), such as a highly reflective and conductive metal of copper, gold, silver, or aluminum, or alloys thereof. Between the layer (114) of highly reflective material and the semiconductor regions (116, 118, 120) of the device is a layer (115) of a transparent conductor. The transparent conductor (115) can be, for example, a transparent conductive oxide such as indium tin oxide, cadmium stannate, or doped tin oxide. The reflector is particularly useful with p-i-n type devices formed from fluorine containing amorphous silicon. <IMAGE>
SE8301366A 1982-03-18 1983-03-14 PHOTOVOLIC DON SE457300B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35937182A 1982-03-18 1982-03-18

Publications (3)

Publication Number Publication Date
SE8301366D0 true SE8301366D0 (en) 1983-03-14
SE8301366L SE8301366L (en) 1983-09-19
SE457300B SE457300B (en) 1988-12-12

Family

ID=23413524

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8301366A SE457300B (en) 1982-03-18 1983-03-14 PHOTOVOLIC DON

Country Status (15)

Country Link
JP (1) JPS58170075A (en)
AU (1) AU540909B2 (en)
BR (1) BR8301160A (en)
CA (1) CA1245330A (en)
DE (1) DE3308598A1 (en)
FR (1) FR2523768B1 (en)
GB (1) GB2116775B (en)
IE (1) IE54573B1 (en)
IL (1) IL67926A (en)
IN (1) IN161241B (en)
IT (1) IT1160506B (en)
MX (1) MX153416A (en)
NL (1) NL8300925A (en)
SE (1) SE457300B (en)
ZA (1) ZA831342B (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171869A (en) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd Photovoltaic device
JPS58171870A (en) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd Photovoltaic device
JPS6034076A (en) * 1983-08-05 1985-02-21 Taiyo Yuden Co Ltd Amorphous silicon solar cell
EP0167231A1 (en) * 1984-05-02 1986-01-08 Energy Conversion Devices, Inc. Photoresponsive device incorporating improved back reflector
DE3502218A1 (en) * 1985-01-24 1986-07-24 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Solar cell which can be used for photovoltaic solar generators
US4663495A (en) * 1985-06-04 1987-05-05 Atlantic Richfield Company Transparent photovoltaic module
JPH0656883B2 (en) * 1986-03-03 1994-07-27 鐘淵化学工業株式会社 Semiconductor device
JPS62259480A (en) * 1986-05-01 1987-11-11 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric converter
JPH01304786A (en) * 1988-06-01 1989-12-08 Mitsubishi Electric Corp Photogeneration element
JPH0273672A (en) * 1988-09-08 1990-03-13 Fuji Electric Corp Res & Dev Ltd Film photoelectric transfer element
US5324365A (en) * 1991-09-24 1994-06-28 Canon Kabushiki Kaisha Solar cell
JP2994812B2 (en) * 1991-09-26 1999-12-27 キヤノン株式会社 Solar cell
JPH0677510A (en) * 1992-08-24 1994-03-18 Canon Inc Photovolatic element
WO1996011500A1 (en) * 1994-10-06 1996-04-18 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Thin film solar cell
US5626687A (en) * 1995-03-29 1997-05-06 The United States Of America As Represented By The United States Department Of Energy Thermophotovoltaic in-situ mirror cell
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US20120318352A1 (en) * 2011-06-14 2012-12-20 General Electric Company Photovoltaic device with reflection enhancing layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3907595A (en) * 1971-12-03 1975-09-23 Communications Satellite Corp Solar cells with incorporate metal leyer
US3973994A (en) * 1974-03-11 1976-08-10 Rca Corporation Solar cell with grooved surface
US3988167A (en) * 1975-03-07 1976-10-26 Rca Corporation Solar cell device having improved efficiency
IT1092849B (en) * 1977-03-28 1985-07-12 Rca Corp PHOTOVOLTAIC DEVICE WITH HIGH ABSORPTION EFFICIENCY
US4166919A (en) * 1978-09-25 1979-09-04 Rca Corporation Amorphous silicon solar cell allowing infrared transmission
JPS55125680A (en) 1979-03-20 1980-09-27 Yoshihiro Hamakawa Photovoltaic element
DE2938260A1 (en) * 1979-09-21 1981-03-26 Messerschmitt-Bölkow-Blohm GmbH, 8000 München SEMICONDUCTOR COMPONENT FOR CONVERTING LIGHT TO ELECTRICAL ENERGY

Also Published As

Publication number Publication date
AU1241583A (en) 1984-09-20
ZA831342B (en) 1983-11-30
CA1245330A (en) 1988-11-22
JPS58170075A (en) 1983-10-06
DE3308598A1 (en) 1983-09-22
IL67926A (en) 1986-04-29
SE457300B (en) 1988-12-12
IT1160506B (en) 1987-03-11
IE830502L (en) 1983-09-18
FR2523768B1 (en) 1991-03-29
GB8306327D0 (en) 1983-04-13
AU540909B2 (en) 1984-12-06
FR2523768A1 (en) 1983-09-23
NL8300925A (en) 1983-10-17
IL67926A0 (en) 1983-06-15
IN161241B (en) 1987-10-31
BR8301160A (en) 1983-11-22
MX153416A (en) 1986-10-07
GB2116775B (en) 1986-07-30
IT8319923A0 (en) 1983-03-04
SE8301366L (en) 1983-09-19
GB2116775A (en) 1983-09-28
IE54573B1 (en) 1989-11-22

Similar Documents

Publication Publication Date Title
SE8301366D0 (en) PHOTOVOLIC DON
ATE252244T1 (en) ELECTROCHROMIC DEVICE
US3049622A (en) Surface-barrier photocells
GB1529139A (en) Photovoltaic cell and a method of manufacturing such a cell
KR830009646A (en) Semiconductor device
CA2090145A1 (en) Photodetector
ATE19445T1 (en) SEMICONDUCTOR COMPONENT FOR THE CONVERSION OF LIGHT INTO ELECTRICAL ENERGY.
KR910013595A (en) Amorphous silicon sensor
GB848619A (en) Improvements in or relating to the fabrication of semiconductor rectifiers
JPS56122156A (en) Lead frame for semiconductor device
JPS5764239A (en) Photosensitive body for electrophotography
GB8725476D0 (en) Light emitting semiconductor device
CA2081250A1 (en) Light detecting device
EP0095283A3 (en) Memory device
KR870003582A (en) Light receiving element
JPS57104279A (en) Photo isolator
ES484353A1 (en) Method of making a thin-film photovoltaic cell and photovoltaic cell made by this method.
GB1266448A (en)
JPS56122155A (en) Lead frame for semiconductor device
JPS644083A (en) Photovoltaic device
GB1535367A (en) Photovoltaic device
JPS5766622A (en) Formation of cdte film
MD1382B1 (en) Carrier for optical information recording
JPS57160156A (en) Semiconductor device
JPS5659238A (en) Photosensitive film

Legal Events

Date Code Title Description
NUG Patent has lapsed

Ref document number: 8301366-4

Effective date: 19931008

Format of ref document f/p: F