SE8301366D0 - Fotovoltiskt don - Google Patents

Fotovoltiskt don

Info

Publication number
SE8301366D0
SE8301366D0 SE8301366A SE8301366A SE8301366D0 SE 8301366 D0 SE8301366 D0 SE 8301366D0 SE 8301366 A SE8301366 A SE 8301366A SE 8301366 A SE8301366 A SE 8301366A SE 8301366 D0 SE8301366 D0 SE 8301366D0
Authority
SE
Sweden
Prior art keywords
layer
highly reflective
tin oxide
reflective material
transparent conductor
Prior art date
Application number
SE8301366A
Other languages
English (en)
Other versions
SE8301366L (sv
SE457300B (sv
Inventor
V Cannella
D D Allred
R Mohr
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of SE8301366D0 publication Critical patent/SE8301366D0/sv
Publication of SE8301366L publication Critical patent/SE8301366L/sv
Publication of SE457300B publication Critical patent/SE457300B/sv

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells
SE8301366A 1982-03-18 1983-03-14 Fotovoltiskt don SE457300B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35937182A 1982-03-18 1982-03-18

Publications (3)

Publication Number Publication Date
SE8301366D0 true SE8301366D0 (sv) 1983-03-14
SE8301366L SE8301366L (sv) 1983-09-19
SE457300B SE457300B (sv) 1988-12-12

Family

ID=23413524

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8301366A SE457300B (sv) 1982-03-18 1983-03-14 Fotovoltiskt don

Country Status (15)

Country Link
JP (1) JPS58170075A (sv)
AU (1) AU540909B2 (sv)
BR (1) BR8301160A (sv)
CA (1) CA1245330A (sv)
DE (1) DE3308598A1 (sv)
FR (1) FR2523768B1 (sv)
GB (1) GB2116775B (sv)
IE (1) IE54573B1 (sv)
IL (1) IL67926A (sv)
IN (1) IN161241B (sv)
IT (1) IT1160506B (sv)
MX (1) MX153416A (sv)
NL (1) NL8300925A (sv)
SE (1) SE457300B (sv)
ZA (1) ZA831342B (sv)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171869A (ja) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd 光起電力装置
JPS58171870A (ja) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd 光起電力装置
JPS6034076A (ja) * 1983-08-05 1985-02-21 Taiyo Yuden Co Ltd 非晶質シリコン太陽電池
EP0167231A1 (en) * 1984-05-02 1986-01-08 Energy Conversion Devices, Inc. Photoresponsive device incorporating improved back reflector
DE3502218A1 (de) * 1985-01-24 1986-07-24 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Fuer photovoltaische solargeneratoren verwendbare solarzelle
US4663495A (en) * 1985-06-04 1987-05-05 Atlantic Richfield Company Transparent photovoltaic module
JPH0656883B2 (ja) * 1986-03-03 1994-07-27 鐘淵化学工業株式会社 半導体装置
JPS62259480A (ja) * 1986-05-01 1987-11-11 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPH01304786A (ja) * 1988-06-01 1989-12-08 Mitsubishi Electric Corp 光発電素子
JPH0273672A (ja) * 1988-09-08 1990-03-13 Fuji Electric Corp Res & Dev Ltd 薄膜光電変換素子
AU650782B2 (en) * 1991-09-24 1994-06-30 Canon Kabushiki Kaisha Solar cell
JP2994812B2 (ja) * 1991-09-26 1999-12-27 キヤノン株式会社 太陽電池
JPH0677510A (ja) * 1992-08-24 1994-03-18 Canon Inc 光起電力素子
DE69535967D1 (de) * 1994-10-06 2009-07-30 Kanegafuchi Chemical Ind Dünnschicht-solarzelle
US5626687A (en) * 1995-03-29 1997-05-06 The United States Of America As Represented By The United States Department Of Energy Thermophotovoltaic in-situ mirror cell
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US20120318352A1 (en) * 2011-06-14 2012-12-20 General Electric Company Photovoltaic device with reflection enhancing layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3907595A (en) * 1971-12-03 1975-09-23 Communications Satellite Corp Solar cells with incorporate metal leyer
US3973994A (en) * 1974-03-11 1976-08-10 Rca Corporation Solar cell with grooved surface
US3988167A (en) * 1975-03-07 1976-10-26 Rca Corporation Solar cell device having improved efficiency
EG13199A (en) * 1977-03-28 1981-06-30 Rca Corp A photo volataic device having increased absorption efficiency
US4166919A (en) * 1978-09-25 1979-09-04 Rca Corporation Amorphous silicon solar cell allowing infrared transmission
JPS55125680A (en) 1979-03-20 1980-09-27 Yoshihiro Hamakawa Photovoltaic element
DE2938260A1 (de) * 1979-09-21 1981-03-26 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Halbleiterbauelement fuer die umsetzung von licht in elektrische energie

Also Published As

Publication number Publication date
IL67926A0 (en) 1983-06-15
AU540909B2 (en) 1984-12-06
IT8319923A0 (it) 1983-03-04
SE8301366L (sv) 1983-09-19
BR8301160A (pt) 1983-11-22
IE830502L (en) 1983-09-18
IT1160506B (it) 1987-03-11
GB8306327D0 (en) 1983-04-13
FR2523768A1 (fr) 1983-09-23
IE54573B1 (en) 1989-11-22
FR2523768B1 (fr) 1991-03-29
IN161241B (sv) 1987-10-31
JPS58170075A (ja) 1983-10-06
MX153416A (es) 1986-10-07
CA1245330A (en) 1988-11-22
GB2116775B (en) 1986-07-30
ZA831342B (en) 1983-11-30
DE3308598A1 (de) 1983-09-22
NL8300925A (nl) 1983-10-17
IL67926A (en) 1986-04-29
AU1241583A (en) 1984-09-20
GB2116775A (en) 1983-09-28
SE457300B (sv) 1988-12-12

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