MX153416A - Mejoras en dispositivo fotovoltaico formado de material semiconductor - Google Patents

Mejoras en dispositivo fotovoltaico formado de material semiconductor

Info

Publication number
MX153416A
MX153416A MX196625A MX19662583A MX153416A MX 153416 A MX153416 A MX 153416A MX 196625 A MX196625 A MX 196625A MX 19662583 A MX19662583 A MX 19662583A MX 153416 A MX153416 A MX 153416A
Authority
MX
Mexico
Prior art keywords
photovoltaic device
device formed
semiconductive material
semiconductive
photovoltaic
Prior art date
Application number
MX196625A
Other languages
English (en)
Inventor
Vincent Cannella
David D Allred
Ralph Mohr
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of MX153416A publication Critical patent/MX153416A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
MX196625A 1982-03-18 1983-03-18 Mejoras en dispositivo fotovoltaico formado de material semiconductor MX153416A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35937182A 1982-03-18 1982-03-18

Publications (1)

Publication Number Publication Date
MX153416A true MX153416A (es) 1986-10-07

Family

ID=23413524

Family Applications (1)

Application Number Title Priority Date Filing Date
MX196625A MX153416A (es) 1982-03-18 1983-03-18 Mejoras en dispositivo fotovoltaico formado de material semiconductor

Country Status (15)

Country Link
JP (1) JPS58170075A (es)
AU (1) AU540909B2 (es)
BR (1) BR8301160A (es)
CA (1) CA1245330A (es)
DE (1) DE3308598A1 (es)
FR (1) FR2523768B1 (es)
GB (1) GB2116775B (es)
IE (1) IE54573B1 (es)
IL (1) IL67926A (es)
IN (1) IN161241B (es)
IT (1) IT1160506B (es)
MX (1) MX153416A (es)
NL (1) NL8300925A (es)
SE (1) SE457300B (es)
ZA (1) ZA831342B (es)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171869A (ja) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd 光起電力装置
JPS58171870A (ja) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd 光起電力装置
JPS6034076A (ja) * 1983-08-05 1985-02-21 Taiyo Yuden Co Ltd 非晶質シリコン太陽電池
EP0167231A1 (en) * 1984-05-02 1986-01-08 Energy Conversion Devices, Inc. Photoresponsive device incorporating improved back reflector
DE3502218A1 (de) * 1985-01-24 1986-07-24 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Fuer photovoltaische solargeneratoren verwendbare solarzelle
US4663495A (en) * 1985-06-04 1987-05-05 Atlantic Richfield Company Transparent photovoltaic module
JPH0656883B2 (ja) * 1986-03-03 1994-07-27 鐘淵化学工業株式会社 半導体装置
JPS62259480A (ja) * 1986-05-01 1987-11-11 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPH01304786A (ja) * 1988-06-01 1989-12-08 Mitsubishi Electric Corp 光発電素子
JPH0273672A (ja) * 1988-09-08 1990-03-13 Fuji Electric Corp Res & Dev Ltd 薄膜光電変換素子
US5324365A (en) * 1991-09-24 1994-06-28 Canon Kabushiki Kaisha Solar cell
JP2994812B2 (ja) * 1991-09-26 1999-12-27 キヤノン株式会社 太陽電池
JPH0677510A (ja) * 1992-08-24 1994-03-18 Canon Inc 光起電力素子
WO1996011500A1 (en) * 1994-10-06 1996-04-18 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Thin film solar cell
US5626687A (en) * 1995-03-29 1997-05-06 The United States Of America As Represented By The United States Department Of Energy Thermophotovoltaic in-situ mirror cell
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US20120318352A1 (en) * 2011-06-14 2012-12-20 General Electric Company Photovoltaic device with reflection enhancing layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3907595A (en) * 1971-12-03 1975-09-23 Communications Satellite Corp Solar cells with incorporate metal leyer
US3973994A (en) * 1974-03-11 1976-08-10 Rca Corporation Solar cell with grooved surface
US3988167A (en) * 1975-03-07 1976-10-26 Rca Corporation Solar cell device having improved efficiency
IT1092849B (it) * 1977-03-28 1985-07-12 Rca Corp Dispositivo fotovoltaico presentante una elevata efficienza di assorbimento
US4166919A (en) * 1978-09-25 1979-09-04 Rca Corporation Amorphous silicon solar cell allowing infrared transmission
JPS55125680A (en) 1979-03-20 1980-09-27 Yoshihiro Hamakawa Photovoltaic element
DE2938260A1 (de) * 1979-09-21 1981-03-26 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Halbleiterbauelement fuer die umsetzung von licht in elektrische energie

Also Published As

Publication number Publication date
AU1241583A (en) 1984-09-20
ZA831342B (en) 1983-11-30
CA1245330A (en) 1988-11-22
JPS58170075A (ja) 1983-10-06
DE3308598A1 (de) 1983-09-22
IL67926A (en) 1986-04-29
SE457300B (sv) 1988-12-12
IT1160506B (it) 1987-03-11
IE830502L (en) 1983-09-18
FR2523768B1 (fr) 1991-03-29
GB8306327D0 (en) 1983-04-13
AU540909B2 (en) 1984-12-06
FR2523768A1 (fr) 1983-09-23
NL8300925A (nl) 1983-10-17
IL67926A0 (en) 1983-06-15
IN161241B (es) 1987-10-31
BR8301160A (pt) 1983-11-22
GB2116775B (en) 1986-07-30
IT8319923A0 (it) 1983-03-04
SE8301366L (sv) 1983-09-19
GB2116775A (en) 1983-09-28
IE54573B1 (en) 1989-11-22
SE8301366D0 (sv) 1983-03-14

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