IT1167554B - Dispositivo e semiconduttore planare - Google Patents

Dispositivo e semiconduttore planare

Info

Publication number
IT1167554B
IT1167554B IT19168/83A IT1916883A IT1167554B IT 1167554 B IT1167554 B IT 1167554B IT 19168/83 A IT19168/83 A IT 19168/83A IT 1916883 A IT1916883 A IT 1916883A IT 1167554 B IT1167554 B IT 1167554B
Authority
IT
Italy
Prior art keywords
semiconductor
planar device
planar
Prior art date
Application number
IT19168/83A
Other languages
English (en)
Other versions
IT8319168A0 (it
Inventor
Peter Flohrs
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of IT8319168A0 publication Critical patent/IT8319168A0/it
Application granted granted Critical
Publication of IT1167554B publication Critical patent/IT1167554B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
IT19168/83A 1982-01-20 1983-01-19 Dispositivo e semiconduttore planare IT1167554B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19823201545 DE3201545A1 (de) 1982-01-20 1982-01-20 Planare halbleiteranordnung

Publications (2)

Publication Number Publication Date
IT8319168A0 IT8319168A0 (it) 1983-01-19
IT1167554B true IT1167554B (it) 1987-05-13

Family

ID=6153430

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19168/83A IT1167554B (it) 1982-01-20 1983-01-19 Dispositivo e semiconduttore planare

Country Status (6)

Country Link
US (1) US4599638A (it)
EP (1) EP0098834B1 (it)
JP (1) JPS59500073A (it)
DE (2) DE3201545A1 (it)
IT (1) IT1167554B (it)
WO (1) WO1983002529A1 (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3417474A1 (de) * 1984-05-11 1985-11-14 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte planare halbleiteranordnung
DE3431676A1 (de) * 1984-08-29 1986-03-13 Robert Bosch Gmbh, 7000 Stuttgart Integrierte leistungsendstufe
JPS61158177A (ja) * 1984-12-28 1986-07-17 Toshiba Corp 半導体装置
US4778775A (en) * 1985-08-26 1988-10-18 Intel Corporation Buried interconnect for silicon on insulator structure
DE58907758D1 (de) * 1988-09-20 1994-07-07 Siemens Ag Planarer pn-Übergang hoher Spannungsfestigkeit.
DE4117959A1 (de) * 1991-05-31 1992-12-03 Bosch Gmbh Robert Halbleiteranordnung mit p-n-uebergang und zugeordneter elektrodenanordnung
US5677562A (en) * 1996-05-14 1997-10-14 General Instrument Corporation Of Delaware Planar P-N junction semiconductor structure with multilayer passivation
EP0925610A1 (de) * 1996-07-16 1999-06-30 Siemens Aktiengesellschaft Halbleiterbauelement mit einer steuerelektrode zur modulation der leitfähigkeit eines kanalbereichs unter verwendung einer feldplattenstruktur
KR101116766B1 (ko) * 2004-06-10 2012-02-22 엘지전자 주식회사 제너 다이오드의 제작방법
CN103840061B (zh) * 2012-11-27 2016-08-03 展晶科技(深圳)有限公司 发光二极管

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293292A (it) * 1962-06-11
NL6413894A (it) * 1964-02-04 1965-08-05
JPS452415Y1 (it) * 1966-01-19 1970-01-31
US3710204A (en) * 1967-05-20 1973-01-09 Telefunken Patent A semiconductor device having a screen electrode of intrinsic semiconductor material
GB1348697A (en) * 1970-07-31 1974-03-20 Fairchild Camera Instr Co Semiconductors
US3949120A (en) * 1970-12-02 1976-04-06 Robert Bosch G.M.B.H. Method of making high speed silicon switching diodes
US4157563A (en) * 1971-07-02 1979-06-05 U.S. Philips Corporation Semiconductor device
JPS5027715A (it) * 1973-07-13 1975-03-22
US4037245A (en) * 1975-11-28 1977-07-19 General Electric Company Electric field controlled diode with a current controlling surface grid
US4106048A (en) * 1977-04-27 1978-08-08 Rca Corp. Integrated circuit protection device comprising diode having large contact area in shunt with protected bipolar transistor
FR2458904A1 (fr) * 1979-06-12 1981-01-02 Thomson Csf Circuit integre monolithique equivalent a un transistor associe a trois diodes anti-saturation
SE423946B (sv) * 1980-10-08 1982-06-14 Asea Ab Tyristor anordnad for sjelvtendning
DE3117804A1 (de) * 1981-05-06 1982-11-25 Robert Bosch Gmbh, 7000 Stuttgart "planare transistorstruktur"
DE3142616A1 (de) * 1981-10-28 1983-05-05 Robert Bosch Gmbh, 7000 Stuttgart "planare transistorstruktur"

Also Published As

Publication number Publication date
JPS59500073A (ja) 1984-01-12
IT8319168A0 (it) 1983-01-19
JPH0546109B2 (it) 1993-07-13
DE3201545A1 (de) 1983-07-28
DE3275044D1 (en) 1987-02-12
US4599638A (en) 1986-07-08
WO1983002529A1 (en) 1983-07-21
EP0098834A1 (de) 1984-01-25
EP0098834B1 (de) 1987-01-07

Similar Documents

Publication Publication Date Title
KR840003534A (ko) 반도체 장치와 그 제조 방법
SE8105257L (sv) Halvledaranordning
DE3382802D1 (de) Halbleiterspeichergerät
KR850006779A (ko) 반도체 장치
DE3473973D1 (de) Masterslice semiconductor device
KR860007755A (ko) 반도체 장치
DE3477312D1 (de) Masterslice semiconductor device
NO831889L (no) Forbrennings-varmeanordning
BR8303890A (pt) Dispositivo anti-refulgor
DK471383A (da) Ultralyd-maaleanordning
KR860004470A (ko) 반도체 장치
IT1167554B (it) Dispositivo e semiconduttore planare
SE8106377L (sv) Halvledaranordning
DE3022122A1 (de) Halbleitervorrichtung
IT1169440B (it) Dispositivo bloccastoppino su stiratoi-filatoi
KR840005919A (ko) 반도체 장치
IT1161822B (it) Dispositivo dispergente
SE8403661D0 (sv) Stralningskenslig halvledaranordning
BR8000967A (pt) Dispositivo semicondutor
IT8324175A1 (it) Dispositivo semiconduttore
DK135682A (da) Emballage- og sammenblandingsaggregat
SE8001042L (sv) Halvledaranordning
IT1218346B (it) Dispositivo di connessione
BR8507182A (pt) Dispositivo e arranjo de semicondutor
DK536183D0 (da) Sigteanordning

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970127