BR8507182A - Dispositivo e arranjo de semicondutor - Google Patents

Dispositivo e arranjo de semicondutor

Info

Publication number
BR8507182A
BR8507182A BR8507182A BR8507182A BR8507182A BR 8507182 A BR8507182 A BR 8507182A BR 8507182 A BR8507182 A BR 8507182A BR 8507182 A BR8507182 A BR 8507182A BR 8507182 A BR8507182 A BR 8507182A
Authority
BR
Brazil
Prior art keywords
arrangement
semiconductor device
semiconductor
Prior art date
Application number
BR8507182A
Other languages
English (en)
Inventor
Guido Petrus Theophie Remmerie
Luc Josef Louis Van De Bossche
Daniel Frans Jozefina Van Pol
Original Assignee
Int Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Standard Electric Corp filed Critical Int Standard Electric Corp
Publication of BR8507182A publication Critical patent/BR8507182A/pt

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744Gate-turn-off devices
    • H01L29/745Gate-turn-off devices with turn-off by field effect
    • H01L29/7455Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747Bidirectional devices, e.g. triacs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
BR8507182A 1984-05-02 1985-05-01 Dispositivo e arranjo de semicondutor BR8507182A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP84200608 1984-05-02
PCT/EP1985/000193 WO1985005224A1 (en) 1984-05-02 1985-05-01 Semiconductor device and arrangement

Publications (1)

Publication Number Publication Date
BR8507182A true BR8507182A (pt) 1987-04-22

Family

ID=8192437

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8507182A BR8507182A (pt) 1984-05-02 1985-05-01 Dispositivo e arranjo de semicondutor

Country Status (11)

Country Link
US (1) US4779125A (pt)
EP (1) EP0210173B1 (pt)
JP (1) JPS62501111A (pt)
BE (1) BE903709A (pt)
BR (1) BR8507182A (pt)
DE (1) DE3579235D1 (pt)
HU (1) HUT42204A (pt)
MA (1) MA20423A1 (pt)
PT (1) PT80385A (pt)
WO (1) WO1985005224A1 (pt)
ZA (1) ZA853266B (pt)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5438220A (en) * 1987-02-26 1995-08-01 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
US5241210A (en) * 1987-02-26 1993-08-31 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
SE468731B (sv) * 1991-07-17 1993-03-08 Asea Brown Boveri Slaeckbart tyristorsystem
US5349212A (en) * 1992-06-01 1994-09-20 Fuji Electric Co., Ltd. Semiconductor device having thyristor structure
JPH07297409A (ja) * 1994-03-02 1995-11-10 Toyota Motor Corp 電界効果型半導体装置
EP2951865B1 (en) * 2013-01-30 2020-03-25 Microchip Technology Incorporated Semiconductor device with esd self-protection and lin bus driver comprising the same

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR897772A (fr) * 1938-12-01 1945-03-30 Ig Farbenindustrie Ag Procédé pour dédoubler des hydrocarbures huileux ou pour hydrogéner sous pression des charbons, goudrons ou huiles minérales
US3394037A (en) * 1965-05-28 1968-07-23 Motorola Inc Method of making a semiconductor device by masking and diffusion
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
US4115797A (en) * 1976-10-04 1978-09-19 Fairchild Camera And Instrument Corporation Integrated injection logic with heavily doped injector base self-aligned with injector emitter and collector
JPS5478092A (en) * 1977-12-05 1979-06-21 Hitachi Ltd Lateral semiconductor device
US4199774A (en) * 1978-09-18 1980-04-22 The Board Of Trustees Of The Leland Stanford Junior University Monolithic semiconductor switching device
US4586073A (en) * 1978-12-20 1986-04-29 At&T Bell Laboratories High voltage junction solid-state switch
US4213067A (en) * 1978-12-22 1980-07-15 Eaton Corporation Integrated gate turn-off device with non-regenerative power portion and lateral regenerative portion having split emission path
IE55992B1 (en) * 1982-04-05 1991-03-13 Gen Electric Insulated gate rectifier with improved current-carrying capability
DE3380136D1 (en) * 1982-04-12 1989-08-03 Gen Electric Semiconductor device having a diffused region of reduced length and method of fabricating the same
US4574209A (en) * 1982-06-21 1986-03-04 Eaton Corporation Split gate EFET and circuitry
US4443931A (en) * 1982-06-28 1984-04-24 General Electric Company Method of fabricating a semiconductor device with a base region having a deep portion
JPS59105354A (ja) * 1982-12-09 1984-06-18 Toshiba Corp 半導体装置
EP0111803B1 (en) * 1982-12-13 1989-03-01 General Electric Company Lateral insulated-gate rectifier structures
SE435436B (sv) * 1983-02-16 1984-09-24 Asea Ab Tvapoligt overstromsskydd
JPS59184560A (ja) * 1983-03-31 1984-10-19 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション 半導体接点構造体
BE897772A (fr) * 1983-09-19 1984-03-19 Itt Ind Belgium Contacts electroniques et dispositifs associes

Also Published As

Publication number Publication date
HUT42204A (en) 1987-06-29
MA20423A1 (fr) 1985-12-31
PT80385A (en) 1985-06-01
JPS62501111A (ja) 1987-04-30
DE3579235D1 (de) 1990-09-20
EP0210173A1 (en) 1987-02-04
WO1985005224A1 (en) 1985-11-21
EP0210173B1 (en) 1990-08-16
US4779125A (en) 1988-10-18
ZA853266B (en) 1985-12-24
BE903709A (nl) 1986-05-26

Similar Documents

Publication Publication Date Title
KR860001495A (ko) 반도체장치 및 그 제조방법
KR840003534A (ko) 반도체 장치와 그 제조 방법
KR860009491A (ko) 반도체 메모리 장치
KR870011686A (ko) 반도체장치 및 그 제조방법
KR850006779A (ko) 반도체 장치
KR860005441A (ko) 반도체기억장치
KR860006844A (ko) 반도체장치 및 그 제조방법
KR860004457A (ko) 반도체 집적회로장치 및 그의 제조방법과 제조장치
KR870009477A (ko) 반도체장치와 그 제조방법
KR840008214A (ko) 반도체장치 및 그 제조방법
KR860004478A (ko) 반도체 메모리 장치
DE3584799D1 (de) Halbleitervorrichtung.
KR860007755A (ko) 반도체 장치
KR850007157A (ko) 반도체 집적 회로장치
KR860003606A (ko) 반도체 메모리 장치
DE3581370D1 (de) Halbleitervorrichtung.
BR8504783A (pt) Dispositivo de montagem e de conexao para semicondutor de potencia
KR890004398A (ko) 반도체장치 및 그의 제조방법
MX157839A (es) Dispositivo fotovoltaico semi-conductor amorfo mejorado
KR870008394A (ko) 반도체장치 및 그 제조방법
KR850008756A (ko) 반도체 메모리 장치
KR850000808A (ko) 반도체장치 및 그 제조방법
DE3586568D1 (de) Halbleitereinrichtung.
KR860004470A (ko) 반도체 장치
KR860007744A (ko) 반도체 메모리장치