SE392783B - Halvledaranordning innefattande en tyristor och en felteffekttransistordel - Google Patents

Halvledaranordning innefattande en tyristor och en felteffekttransistordel

Info

Publication number
SE392783B
SE392783B SE7507080A SE7507080A SE392783B SE 392783 B SE392783 B SE 392783B SE 7507080 A SE7507080 A SE 7507080A SE 7507080 A SE7507080 A SE 7507080A SE 392783 B SE392783 B SE 392783B
Authority
SE
Sweden
Prior art keywords
thyrist
semiconductor device
device including
power transistor
field power
Prior art date
Application number
SE7507080A
Other languages
English (en)
Other versions
SE7507080L (sv
Inventor
P Svedberg
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Priority to SE7507080A priority Critical patent/SE392783B/sv
Priority to US05/691,618 priority patent/US4224634A/en
Priority to DE2625917A priority patent/DE2625917C3/de
Priority to JP51071682A priority patent/JPS5947469B2/ja
Publication of SE7507080L publication Critical patent/SE7507080L/sv
Publication of SE392783B publication Critical patent/SE392783B/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H10D18/65—Gate-turn-off devices  with turn-off by field effect 
    • H10D18/655—Gate-turn-off devices  with turn-off by field effect  produced by insulated gate structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
SE7507080A 1975-06-19 1975-06-19 Halvledaranordning innefattande en tyristor och en felteffekttransistordel SE392783B (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE7507080A SE392783B (sv) 1975-06-19 1975-06-19 Halvledaranordning innefattande en tyristor och en felteffekttransistordel
US05/691,618 US4224634A (en) 1975-06-19 1976-06-01 Externally controlled semiconductor devices with integral thyristor and bridging FET components
DE2625917A DE2625917C3 (de) 1975-06-19 1976-06-10 Halbleiteranordnung
JP51071682A JPS5947469B2 (ja) 1975-06-19 1976-06-17 半導体デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE7507080A SE392783B (sv) 1975-06-19 1975-06-19 Halvledaranordning innefattande en tyristor och en felteffekttransistordel

Publications (2)

Publication Number Publication Date
SE7507080L SE7507080L (sv) 1976-12-20
SE392783B true SE392783B (sv) 1977-04-18

Family

ID=20324915

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7507080A SE392783B (sv) 1975-06-19 1975-06-19 Halvledaranordning innefattande en tyristor och en felteffekttransistordel

Country Status (4)

Country Link
US (1) US4224634A (sv)
JP (1) JPS5947469B2 (sv)
DE (1) DE2625917C3 (sv)
SE (1) SE392783B (sv)

Families Citing this family (100)

* Cited by examiner, † Cited by third party
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JPS54152477A (en) * 1978-04-24 1979-11-30 Gen Electric Thyristor and method of forming same
DE2825794C2 (de) * 1978-06-13 1986-03-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
JPS553694A (en) * 1978-06-16 1980-01-11 Motorola Inc Device for triggering monolithic semiconductor
DE2835089A1 (de) * 1978-08-10 1980-03-20 Siemens Ag Thyristor
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
JPS55128870A (en) * 1979-03-26 1980-10-06 Semiconductor Res Found Electrostatic induction thyristor and semiconductor device
SE430450B (sv) * 1979-04-03 1983-11-14 Asea Ab Tvapoligt overstromsskydd for inkoppling i en stromforande ledning
DE2915885C2 (de) * 1979-04-19 1983-11-17 Siemens AG, 1000 Berlin und 8000 München Thyristor mit Steuerung durch Feldeffekttransistor
DE2922301C2 (de) * 1979-05-31 1985-04-25 Siemens AG, 1000 Berlin und 8000 München Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung
DE2945347A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb
DE2945380A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Triac mit einem mehrschichten-halbleiterkoerper
DE2945324A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten
DE2945366A1 (de) * 1979-11-09 1981-05-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen
DE2945335A1 (de) * 1979-11-09 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor
US4250409A (en) * 1979-12-28 1981-02-10 Bell Telephone Laboratories, Incorporated Control circuitry using a pull-down transistor for high voltage field terminated diode solid-state switches
US4489340A (en) * 1980-02-04 1984-12-18 Nippon Telegraph & Telephone Public Corporation PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions
JPS56110263A (en) * 1980-02-04 1981-09-01 Oki Electric Ind Co Ltd Thyristor element
DE3018468A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitterkurzschluessen und verfahren zu seinem betrieb
DE3018499A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
AU577861B2 (en) * 1980-05-14 1988-10-06 Bell Telephone Manufacturing Company. N.V. Semiconductor device and arrangement
DE3018542A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbarem emitter-kurzschluss und verfahren zu seinem betrieb
US4622572A (en) * 1980-05-23 1986-11-11 General Electric Company High voltage semiconductor device having an improved DV/DT capability and plasma spreading
DE3024015A1 (de) * 1980-06-26 1982-01-07 Siemens AG, 1000 Berlin und 8000 München Steuerbarer halbleiterschalter
DE3032461A1 (de) * 1980-08-28 1982-04-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von legierten metallkontaktschichten auf kristallorientierten halbleiteroberflaechen mittels energiepulsbestrahlung
DD154049A1 (de) * 1980-10-30 1982-02-17 Siegfried Wagner Steuerbares halbleiterbauelement
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
EP0060912B1 (de) * 1981-03-24 1986-10-22 Siemens Aktiengesellschaft Thyristor mit einem abschaltbaren Emitter-Kurzschluss
DE3112941A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor mit innerer stromverstaerkung und verfahren zu seinem betrieb
DE3112942A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor und verfahren zu seinem betrieb
DE3112940A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor mit anschaltbarer innerer stromverstaerkerung und verfahren zu seinem betrieb
DE3118293A1 (de) * 1981-05-08 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten und verfahren zu seinem betrieb
DE3118305A1 (de) * 1981-05-08 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten sowie verfahren zu seinem betrieb
DE3118354A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitterkurzschluessen und kurzschlussgebieten sowie verfahren zu seinem betrieb
DE3118291A1 (de) * 1981-05-08 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Triac und verfahren zu seinem betrieb
DE3118364A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit optoelektronisch angesteuerten emitterkurzschluessen und verfahren zu seinem betrieb
DE3118365A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit in den emitter eingefuegten steuerbaren emitter-kurzschlusspfaden
DE3118318A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit steuerbaren emitter-kurzschlusspfaden und verfahren zu seinem betrieb
DE3118317A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und kurzschlussgebieten sowie verfahren zu seinem betrieb
DE3118347A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit gategesteuerten mis-fet-strukturen des verarmungstyps und verfahren zu seinem betrieb
US4797720A (en) * 1981-07-29 1989-01-10 American Telephone And Telegraph Company, At&T Bell Laboratories Controlled breakover bidirectional semiconductor switch
US4458408A (en) * 1981-07-31 1984-07-10 Motorola, Inc. Method for making a light-activated line-operable zero-crossing switch
JPS5831572A (ja) * 1981-08-19 1983-02-24 Nippon Telegr & Teleph Corp <Ntt> ラテラル型ｐｎｐｎ素子
DE3138762A1 (de) * 1981-09-29 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen und zuendverstaerkung
DE3138763A1 (de) * 1981-09-29 1983-06-30 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit steuerbaren emitter-kurzschluessen und zuendverstaerkung
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JPS58105572A (ja) * 1981-12-18 1983-06-23 Sanken Electric Co Ltd ゼロクロス光サイリスタ
US4472642A (en) * 1982-02-12 1984-09-18 Mitsubishi Denki Kabushiki Kaisha Power semiconductor switching device
SE431381B (sv) * 1982-06-03 1984-01-30 Asea Ab Tvapoligt overstromsskydd
DE3226613A1 (de) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf
DE3226624A1 (de) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf und hoher kritischer spannungsanstiegsgeschwindigkeit
DE3230741A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Halbleiterschalter mit einem abschaltbaren thyristor
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DE3238468C2 (de) * 1982-10-16 1984-08-30 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Optisch zündbarer Thyristor
DE3240564A1 (de) * 1982-11-03 1984-05-03 Licentia Patent-Verwaltungs-Gmbh Steuerbares halbleiterschaltelement
JPS59110456A (ja) * 1982-12-15 1984-06-26 Nissan Motor Co Ltd 吸引鋳造装置
US4535251A (en) * 1982-12-21 1985-08-13 International Rectifier Corporation A.C. Solid state relay circuit and structure
SE435436B (sv) * 1983-02-16 1984-09-24 Asea Ab Tvapoligt overstromsskydd
JPS59184560A (ja) * 1983-03-31 1984-10-19 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体接点構造体
US4604638A (en) * 1983-05-17 1986-08-05 Kabushiki Kaisha Toshiba Five layer semiconductor device with separate insulated turn-on and turn-off gates
DE3318607A1 (de) * 1983-05-21 1984-11-22 Brown, Boveri & Cie Ag, 6800 Mannheim Festkoerper-relais
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US4553041A (en) * 1983-08-22 1985-11-12 Motorola, Inc. Monolithic zero crossing triac driver
US4779126A (en) * 1983-11-25 1988-10-18 International Rectifier Corporation Optically triggered lateral thyristor with auxiliary region
JPS60115263A (ja) * 1983-11-28 1985-06-21 Toshiba Corp 半導体装置
JPH0618255B2 (ja) * 1984-04-04 1994-03-09 株式会社東芝 半導体装置
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DE3521079A1 (de) * 1984-06-12 1985-12-12 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Rueckwaerts leitende vollsteuergate-thyristoranordnung
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US4821083A (en) * 1986-09-30 1989-04-11 Kabushiki Kaisha Toshiba Thyristor drive system
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ATE74466T1 (de) * 1988-03-10 1992-04-15 Asea Brown Boveri Mos-gesteuerter thyristor (mct).
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SE463235B (sv) * 1989-02-23 1990-10-22 Asea Brown Boveri Mos-faelteffekttransistorstyrd tyristor
JPH07112150B2 (ja) * 1989-04-28 1995-11-29 株式会社東芝 光トリガースイッチング回路
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US5479031A (en) * 1993-09-10 1995-12-26 Teccor Electronics, Inc. Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value
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FR2754392B1 (fr) * 1996-10-04 1999-04-30 Centre Nat Rech Scient Thyristor dual normalement passant blocable par une impulsion appliquee sur la gachette
WO2000016405A1 (en) * 1998-09-10 2000-03-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for driving the same
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US9305907B2 (en) 2013-03-22 2016-04-05 Stmicroelectronics S.R.L. Optoelectronic integrated device including a photodetector and a MOSFET transistor, and manufacturing process thereof
CN104425583B (zh) * 2013-08-20 2018-05-04 旺宏电子股份有限公司 半导体装置及其制造方法
EP3167489B1 (en) 2015-09-11 2017-10-25 ABB Schweiz AG Gate commutated thyristor
CN112563325B (zh) * 2020-12-14 2022-05-13 电子科技大学 一种mos栅控晶闸管及其制造方法
CN112563326B (zh) * 2020-12-14 2022-05-17 电子科技大学 一种具有寄生二极管的mos栅控晶闸管及其制造方法

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JPS5534582B2 (sv) * 1974-06-24 1980-09-08

Also Published As

Publication number Publication date
DE2625917C3 (de) 1979-12-06
JPS5245288A (en) 1977-04-09
US4224634A (en) 1980-09-23
JPS5947469B2 (ja) 1984-11-19
DE2625917A1 (de) 1976-12-30
DE2625917B2 (de) 1979-04-12
SE7507080L (sv) 1976-12-20

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