IT1051171B - Dispositivo semiconduttore - Google Patents
Dispositivo semiconduttoreInfo
- Publication number
- IT1051171B IT1051171B IT30425/75A IT3042575A IT1051171B IT 1051171 B IT1051171 B IT 1051171B IT 30425/75 A IT30425/75 A IT 30425/75A IT 3042575 A IT3042575 A IT 3042575A IT 1051171 B IT1051171 B IT 1051171B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductive device
- semiconductive
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/564,911 US3967295A (en) | 1975-04-03 | 1975-04-03 | Input transient protection for integrated circuit element |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1051171B true IT1051171B (it) | 1981-04-21 |
Family
ID=24256403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT30425/75A IT1051171B (it) | 1975-04-03 | 1975-12-17 | Dispositivo semiconduttore |
Country Status (4)
Country | Link |
---|---|
US (1) | US3967295A (it) |
JP (1) | JPS51117880A (it) |
DE (1) | DE2559360A1 (it) |
IT (1) | IT1051171B (it) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4152717A (en) * | 1975-07-18 | 1979-05-01 | Tokyo Shibaura Electric Co., Ltd. | Complementary MOSFET device |
US4168442A (en) * | 1975-07-18 | 1979-09-18 | Tokyo Shibaura Electric Co., Ltd. | CMOS FET device with abnormal current flow prevention |
DE2539890B2 (de) * | 1975-09-08 | 1978-06-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Schaltungsanordnung zum Schutz von Eingängen integrierter MOS-Schaltkreise |
JPS5268382A (en) * | 1975-12-05 | 1977-06-07 | Hitachi Ltd | Semiconductor circuit unit |
JPS5299786A (en) * | 1976-02-18 | 1977-08-22 | Agency Of Ind Science & Technol | Mos integrated circuit |
NL176322C (nl) * | 1976-02-24 | 1985-03-18 | Philips Nv | Halfgeleiderinrichting met beveiligingsschakeling. |
US4066918A (en) * | 1976-09-30 | 1978-01-03 | Rca Corporation | Protection circuitry for insulated-gate field-effect transistor (IGFET) circuits |
DE2644402C2 (de) * | 1976-10-01 | 1978-08-24 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Elektronischer Schalter |
US4048584A (en) * | 1976-11-26 | 1977-09-13 | Motorola, Inc. | Input protection circuit for cmos oscillator |
CH616024A5 (it) * | 1977-05-05 | 1980-02-29 | Centre Electron Horloger | |
GB1549130A (en) * | 1977-06-01 | 1979-08-01 | Hughes Microelectronics Ltd Cm | Monolithic integrated circuit |
US4189739A (en) * | 1978-03-08 | 1980-02-19 | Bell Telephone Laboratories, Incorporated | Semiconductor overload protection structure |
JPS54134575A (en) * | 1978-04-10 | 1979-10-19 | Nec Corp | Semiconductor device |
JPS54134572A (en) * | 1978-04-11 | 1979-10-19 | Toshiba Corp | Integrated circuit device |
US4223334A (en) * | 1978-08-29 | 1980-09-16 | Harris Corporation | High voltage CMOS with local oxidation for self-aligned guard rings and process of fabrication |
US4198696A (en) * | 1978-10-24 | 1980-04-15 | International Business Machines Corporation | Laser cut storage cell |
JPS55118664A (en) * | 1979-03-06 | 1980-09-11 | Nec Corp | Semiconductor device |
US4476476A (en) * | 1979-04-05 | 1984-10-09 | National Semiconductor Corporation | CMOS Input and output protection circuit |
JPS55157259A (en) * | 1979-05-25 | 1980-12-06 | Nec Corp | Semiconductor device |
JPS56120165A (en) * | 1980-02-28 | 1981-09-21 | Nec Corp | Protecting device for input of semiconductor device |
US4342045A (en) * | 1980-04-28 | 1982-07-27 | Advanced Micro Devices, Inc. | Input protection device for integrated circuits |
JPS57130461A (en) * | 1981-02-06 | 1982-08-12 | Hitachi Ltd | Semiconductor memory storage |
US4455739A (en) * | 1982-04-19 | 1984-06-26 | Texas Instruments Incorporated | Process protection for individual device gates on large area MIS devices |
US4786956A (en) * | 1982-10-20 | 1988-11-22 | North American Philips Corporation, Signetics Division | Input protection device for integrated circuits |
JPH061833B2 (ja) * | 1982-11-11 | 1994-01-05 | 株式会社東芝 | Mos形半導体装置 |
JPS60767A (ja) * | 1983-06-17 | 1985-01-05 | Hitachi Ltd | 半導体装置 |
JPS6066049U (ja) * | 1983-10-12 | 1985-05-10 | 日本電気株式会社 | C−mos型電界効果トランジスタ |
JPS60123052A (ja) * | 1983-12-07 | 1985-07-01 | Hitachi Ltd | 半導体装置 |
DE3408285A1 (de) * | 1984-03-07 | 1985-09-19 | Telefunken electronic GmbH, 7100 Heilbronn | Schutzanordnung fuer einen feldeffekttransistor |
JPS60246665A (ja) * | 1984-05-22 | 1985-12-06 | Nec Corp | 入力保護装置 |
US4626882A (en) * | 1984-07-18 | 1986-12-02 | International Business Machines Corporation | Twin diode overvoltage protection structure |
JPS6153761A (ja) * | 1984-08-24 | 1986-03-17 | Hitachi Ltd | 半導体装置 |
US4757363A (en) * | 1984-09-14 | 1988-07-12 | Harris Corporation | ESD protection network for IGFET circuits with SCR prevention guard rings |
US4736271A (en) * | 1987-06-23 | 1988-04-05 | Signetics Corporation | Protection device utilizing one or more subsurface diodes and associated method of manufacture |
EP0347189B1 (en) * | 1988-06-13 | 1994-08-24 | Nissan Motor Co., Ltd. | Circuit for protecting input of semiconductor device |
US5032742A (en) * | 1989-07-28 | 1991-07-16 | Dallas Semiconductor Corporation | ESD circuit for input which exceeds power supplies in normal operation |
US5212618A (en) * | 1990-05-03 | 1993-05-18 | Linear Technology Corporation | Electrostatic discharge clamp using vertical NPN transistor |
US5287047A (en) * | 1991-03-15 | 1994-02-15 | Rohm Co., Ltd. | Motor drive circuit and motor drive system using the same |
US5479039A (en) * | 1993-09-23 | 1995-12-26 | Integrated Device Technology, Inc. | MOS electrostatic discharge protection device and structure |
DE4423733C2 (de) * | 1994-07-06 | 1999-04-01 | Siemens Ag | Integriertes Leistungs-Halbleiterbauelement mit Schutzstruktur |
JPH0888323A (ja) * | 1994-09-19 | 1996-04-02 | Nippondenso Co Ltd | 半導体集積回路装置 |
JP2904071B2 (ja) * | 1995-10-04 | 1999-06-14 | 日本電気株式会社 | 半導体装置 |
US5674761A (en) * | 1996-05-02 | 1997-10-07 | Etron Technology, Inc. | Method of making ESD protection device structure for low supply voltage applications |
US6268242B1 (en) | 1997-12-31 | 2001-07-31 | Richard K. Williams | Method of forming vertical mosfet device having voltage clamped gate and self-aligned contact |
US6172383B1 (en) | 1997-12-31 | 2001-01-09 | Siliconix Incorporated | Power MOSFET having voltage-clamped gate |
EP1135806A1 (de) * | 1998-12-03 | 2001-09-26 | Infineon Technologies AG | Steuerbares halbleiterbauelement mit einem gatevorwiderstand |
US6184557B1 (en) * | 1999-01-28 | 2001-02-06 | National Semiconductor Corporation | I/O circuit that utilizes a pair of well structures as resistors to delay an ESD event and as diodes for ESD protection |
JP4166103B2 (ja) * | 2003-02-27 | 2008-10-15 | ローム株式会社 | 半導体集積回路装置 |
JP5131814B2 (ja) * | 2007-02-27 | 2013-01-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1170705A (en) * | 1967-02-27 | 1969-11-12 | Hitachi Ltd | An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same |
GB1209271A (en) * | 1967-02-27 | 1970-10-21 | Hitachi Ltd | Improvements in semiconductor devices |
JPS4632972B1 (it) * | 1967-11-13 | 1971-09-27 | ||
GB1226899A (it) * | 1968-07-17 | 1971-03-31 | ||
JPS5122794B1 (it) * | 1970-06-24 | 1976-07-12 | ||
US3673428A (en) * | 1970-09-18 | 1972-06-27 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
US3629782A (en) * | 1970-10-06 | 1971-12-21 | Cogar Corp | Resistor with means for decreasing current density |
US3667009A (en) * | 1970-12-28 | 1972-05-30 | Motorola Inc | Complementary metal oxide semiconductor gate protection diode |
US3712995A (en) * | 1972-03-27 | 1973-01-23 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
-
1975
- 1975-04-03 US US05/564,911 patent/US3967295A/en not_active Expired - Lifetime
- 1975-12-17 IT IT30425/75A patent/IT1051171B/it active
- 1975-12-27 JP JP50159724A patent/JPS51117880A/ja active Granted
- 1975-12-31 DE DE19752559360 patent/DE2559360A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
US3967295A (en) | 1976-06-29 |
JPS5532223B2 (it) | 1980-08-23 |
DE2559360A1 (de) | 1976-10-14 |
JPS51117880A (en) | 1976-10-16 |
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