KR870009477A - 반도체장치와 그 제조방법 - Google Patents

반도체장치와 그 제조방법

Info

Publication number
KR870009477A
KR870009477A KR1019870002911A KR870002911A KR870009477A KR 870009477 A KR870009477 A KR 870009477A KR 1019870002911 A KR1019870002911 A KR 1019870002911A KR 870002911 A KR870002911 A KR 870002911A KR 870009477 A KR870009477 A KR 870009477A
Authority
KR
South Korea
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
KR1019870002911A
Other languages
English (en)
Other versions
KR900003831B1 (ko
Inventor
코지 시라이
겐 가와무라
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR870009477A publication Critical patent/KR870009477A/ko
Application granted granted Critical
Publication of KR900003831B1 publication Critical patent/KR900003831B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/031—Diffusion at an edge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/082—Ion implantation FETs/COMs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019870002911A 1986-03-28 1987-03-28 반도체장치와 그 제조방법 KR900003831B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61-68702 1986-03-28
JP61068702A JPH0812918B2 (ja) 1986-03-28 1986-03-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR870009477A true KR870009477A (ko) 1987-10-27
KR900003831B1 KR900003831B1 (ko) 1990-06-02

Family

ID=13381361

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870002911A KR900003831B1 (ko) 1986-03-28 1987-03-28 반도체장치와 그 제조방법

Country Status (5)

Country Link
US (2) US4878096A (ko)
EP (1) EP0242623B1 (ko)
JP (1) JPH0812918B2 (ko)
KR (1) KR900003831B1 (ko)
DE (1) DE3789826T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100711557B1 (ko) * 2004-08-11 2007-04-27 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Ｌｄｍｏｓ 트랜지스터를 제조하는 방법 및 그 구조

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US5374840A (en) * 1989-04-25 1994-12-20 Matsushita Electronics Corporation Semiconductor device with isolated transistors
US5238860A (en) * 1987-07-10 1993-08-24 Kabushiki Kaisha Toshiba Semiconductor device having different impurity concentration wells
JPH01125971A (ja) * 1987-11-11 1989-05-18 Seiko Instr & Electron Ltd Ｃ−ｍｉｓ型半導体装置とその製造方法
JPH01194349A (ja) * 1988-01-29 1989-08-04 Toshiba Corp 半導体装置
US4998156A (en) * 1988-03-25 1991-03-05 General Electric Company Structure for a complementary-symmetry COMFET pair
US5262846A (en) * 1988-11-14 1993-11-16 Texas Instruments Incorporated Contact-free floating-gate memory array with silicided buried bitlines and with single-step-defined floating gates
GB8907898D0 (en) * 1989-04-07 1989-05-24 Inmos Ltd Semiconductor devices and fabrication thereof
GB2237445B (en) * 1989-10-04 1994-01-12 Seagate Microelectron Ltd A semiconductor device fabrication process
US5057446A (en) * 1990-08-06 1991-10-15 Texas Instruments Incorporated Method of making an EEPROM with improved capacitive coupling between control gate and floating gate
US5273926A (en) * 1991-06-27 1993-12-28 Texas Instruments Incorporated Method of making flash EEPROM or merged FAMOS cell without alignment sensitivity
JP3226053B2 (ja) * 1992-06-03 2001-11-05 富士電機株式会社 半導体装置の製造方法
US5446300A (en) * 1992-11-04 1995-08-29 North American Philips Corporation Semiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuit
JPH06314773A (ja) * 1993-03-03 1994-11-08 Nec Corp 半導体装置
JPH08172139A (ja) * 1994-12-19 1996-07-02 Sony Corp 半導体装置製造方法
DE19526183C1 (de) * 1995-07-18 1996-09-12 Siemens Ag Verfahren zur Herstellung von mindestens zwei Transistoren in einem Halbleiterkörper
KR980006533A (ko) * 1996-06-28 1998-03-30 김주용 반도체 장치 및 그 제조방법
TW506119B (en) * 1998-05-25 2002-10-11 United Microelectronics Corp Manufacturing method of well
US6069048A (en) * 1998-09-30 2000-05-30 Lsi Logic Corporation Reduction of silicon defect induced failures as a result of implants in CMOS and other integrated circuits
KR100407683B1 (ko) * 2000-06-27 2003-12-01 주식회사 하이닉스반도체 반도체 소자의 콘택 플러그 형성 방법
JP2003324159A (ja) * 2002-04-26 2003-11-14 Ricoh Co Ltd 半導体装置
JP4437388B2 (ja) * 2003-02-06 2010-03-24 株式会社リコー 半導体装置
US7544558B2 (en) * 2006-03-13 2009-06-09 Bcd Semiconductor Manufacturing Limited Method for integrating DMOS into sub-micron CMOS process
RU2497229C2 (ru) * 2011-12-07 2013-10-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования Кабардино-Балкарский государственный университет им. Х.М. Бербекова Способ изготовления полупроводникового прибора
US8941188B2 (en) * 2012-03-26 2015-01-27 Infineon Technologies Austria Ag Semiconductor arrangement with a superjunction transistor and a further device integrated in a common semiconductor body
US9324762B1 (en) * 2015-03-26 2016-04-26 Himax Imaging Limited Process of forming a semiconductor device
TWI585960B (zh) * 2015-03-27 2017-06-01 恆景科技股份有限公司 形成半導體元件及影像感測器的製程
US11069777B1 (en) * 2020-06-09 2021-07-20 Monolithic Power Systems, Inc. Manufacturing method of self-aligned DMOS body pickup

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US4214359A (en) * 1978-12-07 1980-07-29 Bell Telephone Laboratories, Incorporated MOS Devices having buried terminal zones under local oxide regions
US4403395A (en) * 1979-02-15 1983-09-13 Texas Instruments Incorporated Monolithic integration of logic, control and high voltage interface circuitry
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US4344081A (en) * 1980-04-14 1982-08-10 Supertex, Inc. Combined DMOS and a vertical bipolar transistor device and fabrication method therefor
JPS57149775A (en) * 1981-03-11 1982-09-16 Fujitsu Ltd Manufacture of semiconductor device
JPS59215766A (ja) * 1983-05-24 1984-12-05 Seiko Instr & Electronics Ltd Ｍｏｓ集積回路装置
BE897139A (nl) * 1983-06-27 1983-12-27 Bell Telephone Mfg Cy Nov Proces voor het maken van een halfgeleider-inrichting en inrichting hierdoor verkregen
US4609413A (en) * 1983-11-18 1986-09-02 Motorola, Inc. Method for manufacturing and epitaxially isolated semiconductor utilizing etch and refill technique
JPS60161658A (ja) * 1984-02-01 1985-08-23 Hitachi Micro Comput Eng Ltd 半導体集積回路装置
JPH0618255B2 (ja) * 1984-04-04 1994-03-09 株式会社東芝 半導体装置
US4626882A (en) * 1984-07-18 1986-12-02 International Business Machines Corporation Twin diode overvoltage protection structure
FR2571178B1 (fr) * 1984-09-28 1986-11-21 Thomson Csf Structure de circuit integre comportant des transistors cmos a tenue en tension elevee, et son procede de fabrication
IT1213234B (it) * 1984-10-25 1989-12-14 Sgs Thomson Microelectronics Procedimento perfezionato per la fabbricazione di dispositivi a semiconduttore dmos.
JPS62130552A (ja) * 1985-12-02 1987-06-12 Mitsubishi Electric Corp 半導体集積回路装置
JPH05215277A (ja) * 1991-03-28 1993-08-24 Nippon Steel Corp 形状記憶合金製パイプ用継手とその製造方法
JPH05267580A (ja) * 1992-03-24 1993-10-15 Fuji Electric Co Ltd 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100711557B1 (ko) * 2004-08-11 2007-04-27 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Ｌｄｍｏｓ 트랜지스터를 제조하는 방법 및 그 구조

Also Published As

Publication number Publication date
JPH0812918B2 (ja) 1996-02-07
JPS62226667A (ja) 1987-10-05
US4878096A (en) 1989-10-31
DE3789826T2 (de) 1994-09-22
EP0242623A3 (en) 1988-05-04
DE3789826D1 (de) 1994-06-23
EP0242623B1 (en) 1994-05-18
KR900003831B1 (ko) 1990-06-02
US5108944A (en) 1992-04-28
EP0242623A2 (en) 1987-10-28

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