KR850000808A - 반도체장치 및 그 제조방법 - Google Patents
반도체장치 및 그 제조방법Info
- Publication number
- KR850000808A KR850000808A KR1019840003247A KR840003247A KR850000808A KR 850000808 A KR850000808 A KR 850000808A KR 1019840003247 A KR1019840003247 A KR 1019840003247A KR 840003247 A KR840003247 A KR 840003247A KR 850000808 A KR850000808 A KR 850000808A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58101767A JPS605570A (ja) | 1983-06-09 | 1983-06-09 | 半導体装置の製造方法 |
JP58-101767 | 1983-06-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR850000808A true KR850000808A (ko) | 1985-03-09 |
KR900005560B1 KR900005560B1 (ko) | 1990-07-31 |
Family
ID=14309370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019840003247A KR900005560B1 (ko) | 1983-06-09 | 1984-06-09 | 반도체장치 및 그 제조방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US4795717A (ko) |
EP (1) | EP0131379B1 (ko) |
JP (1) | JPS605570A (ko) |
KR (1) | KR900005560B1 (ko) |
CA (1) | CA1226375A (ko) |
DE (1) | DE3484666D1 (ko) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS605570A (ja) * | 1983-06-09 | 1985-01-12 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS63114176A (ja) * | 1986-10-31 | 1988-05-19 | Fujitsu Ltd | 高速電界効果半導体装置 |
US4898834A (en) * | 1988-06-27 | 1990-02-06 | Amber Engineering, Inc. | Open-tube, benign-environment annealing method for compound semiconductors |
US5177026A (en) * | 1989-05-29 | 1993-01-05 | Mitsubishi Denki Kabushiki Kaisha | Method for producing a compound semiconductor MIS FET |
US5227644A (en) * | 1989-07-06 | 1993-07-13 | Nec Corporation | Heterojunction field effect transistor with improve carrier density and mobility |
JPH088243B2 (ja) * | 1989-12-13 | 1996-01-29 | 三菱電機株式会社 | 表面クリーニング装置及びその方法 |
US5219772A (en) * | 1991-08-15 | 1993-06-15 | At&T Bell Laboratories | Method for making field effect devices with ultra-short gates |
US5313093A (en) * | 1991-10-29 | 1994-05-17 | Rohm Co., Ltd. | Compound semiconductor device |
US5520785A (en) * | 1994-01-04 | 1996-05-28 | Motorola, Inc. | Method for enhancing aluminum nitride |
US6150680A (en) * | 1998-03-05 | 2000-11-21 | Welch Allyn, Inc. | Field effect semiconductor device having dipole barrier |
US6800499B2 (en) * | 1999-05-28 | 2004-10-05 | National Science Council | Process for preparing a hydrogen sensor |
US7622322B2 (en) * | 2001-03-23 | 2009-11-24 | Cornell Research Foundation, Inc. | Method of forming an AlN coated heterojunction field effect transistor |
TW573120B (en) * | 2002-12-06 | 2004-01-21 | Univ Nat Cheng Kung | Hydrogen sensor suitable for high temperature operation and method for producing the same |
US9105571B2 (en) * | 2012-02-08 | 2015-08-11 | International Business Machines Corporation | Interface engineering to optimize metal-III-V contacts |
US9647091B2 (en) | 2015-05-01 | 2017-05-09 | International Business Machines Corporation | Annealed metal source drain overlapping the gate |
EP3193364B1 (en) * | 2016-01-18 | 2020-10-21 | Nexperia B.V. | Integrated resistor element and associated manufacturing method |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4194935A (en) * | 1978-04-24 | 1980-03-25 | Bell Telephone Laboratories, Incorporated | Method of making high mobility multilayered heterojunction devices employing modulated doping |
US4310570A (en) * | 1979-12-20 | 1982-01-12 | Eaton Corporation | Field-effect transistors with micron and submicron gate lengths |
JPS577165A (en) * | 1980-06-17 | 1982-01-14 | Fujitsu Ltd | Semiconductor device |
DE3072175D1 (de) * | 1979-12-28 | 1990-04-26 | Fujitsu Ltd | Halbleitervorrichtungen mit heterouebergang. |
DE3005733A1 (de) * | 1980-02-15 | 1981-08-20 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung einer halbleiteranordnung und nach diesem verfahren hergestellte halbleiteranordnung |
US4434013A (en) * | 1980-02-19 | 1984-02-28 | Xerox Corporation | Method of making a self-aligned Schottky metal semi-conductor field effect transistor with buried source and drain |
US4338616A (en) * | 1980-02-19 | 1982-07-06 | Xerox Corporation | Self-aligned Schottky metal semi-conductor field effect transistor with buried source and drain |
JPS5742170A (en) * | 1980-08-26 | 1982-03-09 | Nippon Telegr & Teleph Corp <Ntt> | Field effect transistor |
DE3171953D1 (en) * | 1980-12-29 | 1985-09-26 | Fujitsu Ltd | High electron mobility single heterojunction semiconductor devices and methods of production of such devices |
JPS57112080A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Manufacture of field-effect transistor |
US4663643A (en) * | 1981-04-23 | 1987-05-05 | Fujitsu Limited | Semiconductor device and process for producing the same |
JPS57176773A (en) * | 1981-04-23 | 1982-10-30 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
US4396437A (en) * | 1981-05-04 | 1983-08-02 | Hughes Aircraft Company | Selective encapsulation, controlled atmosphere annealing for III-V semiconductor device fabrication |
JPS5851576A (ja) * | 1981-09-22 | 1983-03-26 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS5851574A (ja) * | 1981-09-22 | 1983-03-26 | Fujitsu Ltd | 半導体装置 |
JPS5891682A (ja) * | 1981-11-27 | 1983-05-31 | Hitachi Ltd | 半導体装置 |
US4467519A (en) * | 1982-04-01 | 1984-08-28 | International Business Machines Corporation | Process for fabricating polycrystalline silicon film resistors |
JPS605570A (ja) * | 1983-06-09 | 1985-01-12 | Fujitsu Ltd | 半導体装置の製造方法 |
-
1983
- 1983-06-09 JP JP58101767A patent/JPS605570A/ja active Granted
-
1984
- 1984-06-04 CA CA000455764A patent/CA1226375A/en not_active Expired
- 1984-06-06 DE DE8484303837T patent/DE3484666D1/de not_active Expired - Fee Related
- 1984-06-06 EP EP84303837A patent/EP0131379B1/en not_active Expired - Lifetime
- 1984-06-09 KR KR1019840003247A patent/KR900005560B1/ko not_active IP Right Cessation
-
1987
- 1987-09-08 US US07/094,079 patent/US4795717A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3484666D1 (de) | 1991-07-11 |
JPS6338871B2 (ko) | 1988-08-02 |
KR900005560B1 (ko) | 1990-07-31 |
US4795717A (en) | 1989-01-03 |
CA1226375A (en) | 1987-09-01 |
JPS605570A (ja) | 1985-01-12 |
EP0131379B1 (en) | 1991-06-05 |
EP0131379A2 (en) | 1985-01-16 |
EP0131379A3 (en) | 1986-09-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
LAPS | Lapse due to unpaid annual fee |