KR850006258A - 반도체장치 제조방법 - Google Patents

반도체장치 제조방법

Info

Publication number
KR850006258A
KR850006258A KR1019850000744A KR850000744A KR850006258A KR 850006258 A KR850006258 A KR 850006258A KR 1019850000744 A KR1019850000744 A KR 1019850000744A KR 850000744 A KR850000744 A KR 850000744A KR 850006258 A KR850006258 A KR 850006258A
Authority
KR
South Korea
Prior art keywords
semiconductor device
device manufacturing
manufacturing
semiconductor
Prior art date
Application number
KR1019850000744A
Other languages
English (en)
Other versions
KR900004968B1 (ko
Inventor
다까히로 두찌야
가쯔아끼 두꾸다
다다까쯔 다까다
히로시 고또
Original Assignee
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26358958&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR850006258(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP59021835A external-priority patent/JPS60173856A/ja
Priority claimed from JP59223351A external-priority patent/JPS61116858A/ja
Application filed by 후지쓰 가부시끼가이샤 filed Critical 후지쓰 가부시끼가이샤
Publication of KR850006258A publication Critical patent/KR850006258A/ko
Application granted granted Critical
Publication of KR900004968B1 publication Critical patent/KR900004968B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H01L23/53295—Stacked insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
KR1019850000744A 1984-02-10 1985-02-06 반도체장치 제조방법 KR900004968B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP59021835A JPS60173856A (ja) 1984-02-10 1984-02-10 半導体装置の製造方法
JP59-21835 1984-02-10
JP59223351A JPS61116858A (ja) 1984-10-24 1984-10-24 層間絶縁膜の形成方法
JP59-223351 1984-10-24

Publications (2)

Publication Number Publication Date
KR850006258A true KR850006258A (ko) 1985-10-02
KR900004968B1 KR900004968B1 (ko) 1990-07-12

Family

ID=26358958

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850000744A KR900004968B1 (ko) 1984-02-10 1985-02-06 반도체장치 제조방법

Country Status (4)

Country Link
US (1) US4654113A (ko)
EP (1) EP0154419B1 (ko)
KR (1) KR900004968B1 (ko)
DE (1) DE3586109D1 (ko)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2588417B1 (fr) * 1985-10-03 1988-07-29 Bull Sa Procede de formation d'un reseau metallique multicouche d'interconnexion des composants d'un circuit integre de haute densite et circuit integre en resultant
FR2588418B1 (fr) * 1985-10-03 1988-07-29 Bull Sa Procede de formation d'un reseau metallique multicouche d'interconnexion des composants d'un circuit integre de haute densite et circuit integre en resultant
US4676867A (en) * 1986-06-06 1987-06-30 Rockwell International Corporation Planarization process for double metal MOS using spin-on glass as a sacrificial layer
KR880005661A (ko) * 1986-10-17 1988-06-29 아르레뜨 다낭제 반도체 집적회로 소자 제조 공정
US4966865A (en) * 1987-02-05 1990-10-30 Texas Instruments Incorporated Method for planarization of a semiconductor device prior to metallization
US4795722A (en) * 1987-02-05 1989-01-03 Texas Instruments Incorporated Method for planarization of a semiconductor device prior to metallization
US4824521A (en) * 1987-04-01 1989-04-25 Fairchild Semiconductor Corporation Planarization of metal pillars on uneven substrates
JPH0654774B2 (ja) * 1987-11-30 1994-07-20 株式会社東芝 半導体装置及びその製造方法
US5055423A (en) * 1987-12-28 1991-10-08 Texas Instruments Incorporated Planarized selective tungsten metallization system
JPH063804B2 (ja) * 1988-01-21 1994-01-12 シャープ株式会社 半導体装置製造方法
EP0326293A1 (en) * 1988-01-27 1989-08-02 Advanced Micro Devices, Inc. Method for forming interconnects
US4894351A (en) * 1988-02-16 1990-01-16 Sprague Electric Company Method for making a silicon IC with planar double layer metal conductors system
GB2216336A (en) * 1988-03-30 1989-10-04 Philips Nv Forming insulating layers on substrates
JP2556138B2 (ja) * 1989-06-30 1996-11-20 日本電気株式会社 半導体装置の製造方法
US5483104A (en) * 1990-01-12 1996-01-09 Paradigm Technology, Inc. Self-aligning contact and interconnect structure
US5166771A (en) * 1990-01-12 1992-11-24 Paradigm Technology, Inc. Self-aligning contact and interconnect structure
JP3128811B2 (ja) * 1990-08-07 2001-01-29 セイコーエプソン株式会社 半導体装置の製造方法
JPH0499057A (ja) * 1990-08-07 1992-03-31 Seiko Epson Corp 半導体装置とその製造方法
GB2249217A (en) * 1990-10-23 1992-04-29 Samsung Electronics Co Ltd Semiconductor device planarisation
US5162261A (en) * 1990-12-05 1992-11-10 Texas Instruments Incorporated Method of forming a via having sloped sidewalls
US5932289A (en) 1991-05-28 1999-08-03 Trikon Technologies Limited Method for filling substrate recesses using pressure and heat treatment
JP2913918B2 (ja) * 1991-08-26 1999-06-28 日本電気株式会社 半導体装置の製造方法
EP0534631B1 (en) * 1991-09-23 1999-01-07 STMicroelectronics, Inc. Method of forming vias structure obtained
US5276126A (en) * 1991-11-04 1994-01-04 Ocg Microelectronic Materials, Inc. Selected novolak resin planarization layer for lithographic applications
KR950011555B1 (ko) * 1992-06-16 1995-10-06 현대전자산업주식회사 반도체 접속장치 및 그 제조방법
KR960009100B1 (en) * 1993-03-02 1996-07-10 Hyundai Electronics Ind Manufacturing method of minute contact hole for highly integrated device
US5470801A (en) * 1993-06-28 1995-11-28 Lsi Logic Corporation Low dielectric constant insulation layer for integrated circuit structure and method of making same
US5324689A (en) * 1993-07-28 1994-06-28 Taiwan Semiconductor Manufacturing Company Critical dimension control with a planarized underlayer
US5847457A (en) * 1993-11-12 1998-12-08 Stmicroelectronics, Inc. Structure and method of forming vias
US5508234A (en) * 1994-10-31 1996-04-16 International Business Machines Corporation Microcavity structures, fabrication processes, and applications thereof
US5817571A (en) * 1996-06-10 1998-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Multilayer interlevel dielectrics using phosphorus-doped glass
JP3264196B2 (ja) * 1996-12-02 2002-03-11 ヤマハ株式会社 絶縁膜平坦化法
JPH10321631A (ja) * 1997-05-19 1998-12-04 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
US6294456B1 (en) * 1998-11-27 2001-09-25 Taiwan Semiconductor Manufacturing Company Method of prefilling of keyhole at the top metal level with photoresist to prevent passivation damage even for a severe top metal rule
JP4917225B2 (ja) * 2001-09-28 2012-04-18 ローム株式会社 半導体装置
US20090230557A1 (en) * 2008-03-17 2009-09-17 Infineon Technologies Ag Semiconductor Device and Method for Making Same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0021818B1 (en) * 1979-06-21 1983-10-05 Fujitsu Limited Improved electronic device having multilayer wiring structure
US4222792A (en) * 1979-09-10 1980-09-16 International Business Machines Corporation Planar deep oxide isolation process utilizing resin glass and E-beam exposure
US4451326A (en) * 1983-09-07 1984-05-29 Advanced Micro Devices, Inc. Method for interconnecting metallic layers

Also Published As

Publication number Publication date
KR900004968B1 (ko) 1990-07-12
EP0154419A2 (en) 1985-09-11
US4654113A (en) 1987-03-31
EP0154419A3 (en) 1988-05-04
EP0154419B1 (en) 1992-05-27
DE3586109D1 (de) 1992-07-02

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