KR860005437A - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법

Info

Publication number
KR860005437A
KR860005437A KR1019850008201A KR850008201A KR860005437A KR 860005437 A KR860005437 A KR 860005437A KR 1019850008201 A KR1019850008201 A KR 1019850008201A KR 850008201 A KR850008201 A KR 850008201A KR 860005437 A KR860005437 A KR 860005437A
Authority
KR
South Korea
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
KR1019850008201A
Other languages
English (en)
Other versions
KR940007539B1 (ko
Inventor
히사요시 야모도
히데오 스즈끼
Original Assignee
쏘니 가부시가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쏘니 가부시가이샤 filed Critical 쏘니 가부시가이샤
Publication of KR860005437A publication Critical patent/KR860005437A/ko
Application granted granted Critical
Publication of KR940007539B1 publication Critical patent/KR940007539B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
KR1019850008201A 1984-12-04 1985-11-04 반도체장치의 제조방법 KR940007539B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP84-256274 1984-12-04
JP59256274A JPS61134055A (ja) 1984-12-04 1984-12-04 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR860005437A true KR860005437A (ko) 1986-07-23
KR940007539B1 KR940007539B1 (ko) 1994-08-19

Family

ID=17290366

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850008201A KR940007539B1 (ko) 1984-12-04 1985-11-04 반도체장치의 제조방법

Country Status (8)

Country Link
US (1) US4702937A (ko)
EP (1) EP0187475B1 (ko)
JP (1) JPS61134055A (ko)
KR (1) KR940007539B1 (ko)
CN (1) CN1005802B (ko)
AU (1) AU595169B2 (ko)
CA (1) CA1262522A (ko)
DE (1) DE3581919D1 (ko)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2180688B (en) * 1985-09-21 1989-09-13 Stc Plc Transistors
KR970003903B1 (en) * 1987-04-24 1997-03-22 Hitachi Mfg Kk Semiconductor device and fabricating method thereof
KR900005038B1 (ko) * 1987-07-31 1990-07-18 삼성전자 주식회사 고저항 다결정 실리콘의 제조방법
JPH01143252A (ja) * 1987-11-27 1989-06-05 Nec Corp 半導体装置
DE3814348A1 (de) * 1988-04-28 1989-11-09 Philips Patentverwaltung Verfahren zur herstellung einer polykristallinen halbleitenden widerstandsschicht aus silicium auf einem siliciumtraeger
JPH0727980B2 (ja) * 1988-07-19 1995-03-29 三菱電機株式会社 高抵抗層を有する半導体装置
US4954927A (en) * 1988-09-16 1990-09-04 Samsung Electronics Co., Ltd. Double capacitor and manufacturing method thereof
US5037766A (en) * 1988-12-06 1991-08-06 Industrial Technology Research Institute Method of fabricating a thin film polysilicon thin film transistor or resistor
US5024972A (en) * 1990-01-29 1991-06-18 Motorola, Inc. Deposition of a conductive layer for contacts
US5460983A (en) * 1993-07-30 1995-10-24 Sgs-Thomson Microelectronics, Inc. Method for forming isolated intra-polycrystalline silicon structures
US5470779A (en) * 1994-07-25 1995-11-28 Taiwan Semiconductor Manufacturing Company Ltd. Method of manufacture of SRAM with SIPOS resistor
US5665629A (en) * 1995-08-11 1997-09-09 International Business Machines Corporation Four transistor SRAM process
US5578854A (en) * 1995-08-11 1996-11-26 International Business Machines Corporation Vertical load resistor SRAM cell
US6008082A (en) 1995-09-14 1999-12-28 Micron Technology, Inc. Method of making a resistor, method of making a diode, and SRAM circuitry and other integrated circuitry
US5567644A (en) 1995-09-14 1996-10-22 Micron Technology, Inc. Method of making a resistor
JPH09148529A (ja) * 1995-11-24 1997-06-06 Yamaha Corp 抵抗形成法
US6489213B1 (en) * 1996-01-05 2002-12-03 Integrated Device Technology, Inc. Method for manufacturing semiconductor device containing a silicon-rich layer
JP3253552B2 (ja) * 1996-05-31 2002-02-04 三洋電機株式会社 半導体装置の製造方法
CN105336575B (zh) * 2014-08-11 2018-05-25 中芯国际集成电路制造(上海)有限公司 形成多晶硅电阻的方法及半导体器件
CN105390396B (zh) * 2015-10-27 2018-06-08 株洲南车时代电气股份有限公司 基于igbt的分步淀积半绝缘多晶硅方法及igbt终端结构

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4087571A (en) * 1971-05-28 1978-05-02 Fairchild Camera And Instrument Corporation Controlled temperature polycrystalline silicon nucleation
JPS5513426B2 (ko) * 1974-06-18 1980-04-09
JPS5640269A (en) * 1979-09-11 1981-04-16 Toshiba Corp Preparation of semiconductor device
US4489103A (en) * 1983-09-16 1984-12-18 Rca Corporation SIPOS Deposition method

Also Published As

Publication number Publication date
KR940007539B1 (ko) 1994-08-19
AU5072285A (en) 1986-06-12
EP0187475A2 (en) 1986-07-16
JPS61134055A (ja) 1986-06-21
EP0187475A3 (en) 1988-09-07
CN85109507A (zh) 1986-06-10
US4702937A (en) 1987-10-27
CA1262522A (en) 1989-10-31
EP0187475B1 (en) 1991-02-27
DE3581919D1 (de) 1991-04-04
CN1005802B (zh) 1989-11-15
AU595169B2 (en) 1990-03-29

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee