KR900013619A - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법

Info

Publication number
KR900013619A
KR900013619A KR1019900002074A KR900002074A KR900013619A KR 900013619 A KR900013619 A KR 900013619A KR 1019900002074 A KR1019900002074 A KR 1019900002074A KR 900002074 A KR900002074 A KR 900002074A KR 900013619 A KR900013619 A KR 900013619A
Authority
KR
South Korea
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
KR1019900002074A
Other languages
English (en)
Other versions
KR930009013B1 (ko
Inventor
마사카즈 가쿠무
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR900013619A publication Critical patent/KR900013619A/ko
Application granted granted Critical
Publication of KR930009013B1 publication Critical patent/KR930009013B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/105—Masks, metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019900002074A 1989-02-20 1990-02-20 반도체장치의 제조방법 KR930009013B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-39820 1989-02-20
JP1039820A JPH0750697B2 (ja) 1989-02-20 1989-02-20 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR900013619A true KR900013619A (ko) 1990-09-06
KR930009013B1 KR930009013B1 (ko) 1993-09-18

Family

ID=12563612

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900002074A KR930009013B1 (ko) 1989-02-20 1990-02-20 반도체장치의 제조방법

Country Status (3)

Country Link
US (1) US5300462A (ko)
JP (1) JPH0750697B2 (ko)
KR (1) KR930009013B1 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0161116B1 (ko) * 1995-01-06 1999-02-01 문정환 반도체 장치의 금속층 형성방법
US5885896A (en) * 1996-07-08 1999-03-23 Micron Technology, Inc. Using implants to lower anneal temperatures
US7696092B2 (en) 2001-11-26 2010-04-13 Globalfoundries Inc. Method of using ternary copper alloy to obtain a low resistance and large grain size interconnect
US6835655B1 (en) 2001-11-26 2004-12-28 Advanced Micro Devices, Inc. Method of implanting copper barrier material to improve electrical performance
US6703307B2 (en) 2001-11-26 2004-03-09 Advanced Micro Devices, Inc. Method of implantation after copper seed deposition
US6703308B1 (en) * 2001-11-26 2004-03-09 Advanced Micro Devices, Inc. Method of inserting alloy elements to reduce copper diffusion and bulk diffusion
US6861349B1 (en) 2002-05-15 2005-03-01 Advanced Micro Devices, Inc. Method of forming an adhesion layer with an element reactive with a barrier layer
US7169706B2 (en) * 2003-10-16 2007-01-30 Advanced Micro Devices, Inc. Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition
KR100595855B1 (ko) * 2004-12-29 2006-06-30 동부일렉트로닉스 주식회사 알루미늄 증착 콘택트 형성 방법
CN103400822A (zh) * 2013-08-01 2013-11-20 京东方科技集团股份有限公司 阵列基板及显示装置
US10438841B2 (en) 2015-10-13 2019-10-08 Amorphyx, Inc. Amorphous metal thin film nonlinear resistor
KR102443767B1 (ko) 2016-07-07 2022-09-15 아모르픽스, 인크 비정질 금속 열전자 트랜지스터
CN108620812B (zh) * 2017-03-17 2019-10-22 宁波江丰电子材料股份有限公司 靶材组件的制造方法
KR20200130466A (ko) 2018-03-30 2020-11-18 아모르픽스, 인크 비정질 금속 박막 트랜지스터

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3887994A (en) * 1973-06-29 1975-06-10 Ibm Method of manufacturing a semiconductor device
US3871067A (en) * 1973-06-29 1975-03-18 Ibm Method of manufacturing a semiconductor device
DE2802838A1 (de) * 1978-01-23 1979-08-16 Siemens Ag Mis-feldeffekttransistor mit kurzer kanallaenge
JPS54101663A (en) * 1978-01-27 1979-08-10 Matsushita Electric Ind Co Ltd Aluminum diffusion method
JPS5679449A (en) * 1979-11-30 1981-06-30 Mitsubishi Electric Corp Production of semiconductor device
US4385947A (en) * 1981-07-29 1983-05-31 Harris Corporation Method for fabricating CMOS in P substrate with single guard ring using local oxidation
JPS594058A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 配線用金属膜の安定化方法
JPS59113645A (ja) * 1982-12-20 1984-06-30 Matsushita Electric Ind Co Ltd 配線パタ−ンの形成方法
JPS6218023A (ja) * 1985-07-16 1987-01-27 Fujitsu Ltd 半導体装置に於けるマイグレ−シヨン防止法
JPS639952A (ja) * 1986-07-01 1988-01-16 Seiko Instr & Electronics Ltd 半導体装置の製造方法
JPS63122245A (ja) * 1986-11-12 1988-05-26 Nec Corp 半導体装置の製造方法
JPS63291435A (ja) * 1987-05-23 1988-11-29 Ricoh Co Ltd 半導体集積回路装置の製造方法
JPH01238043A (ja) * 1988-03-17 1989-09-22 Sony Corp 配線形成方法

Also Published As

Publication number Publication date
KR930009013B1 (ko) 1993-09-18
JPH0750697B2 (ja) 1995-05-31
US5300462A (en) 1994-04-05
JPH02219223A (ja) 1990-08-31

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