KR900012368A - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법

Info

Publication number
KR900012368A
KR900012368A KR1019900000602A KR900000602A KR900012368A KR 900012368 A KR900012368 A KR 900012368A KR 1019900000602 A KR1019900000602 A KR 1019900000602A KR 900000602 A KR900000602 A KR 900000602A KR 900012368 A KR900012368 A KR 900012368A
Authority
KR
South Korea
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
KR1019900000602A
Other languages
English (en)
Other versions
KR940006708B1 (ko
Inventor
가즈히로 다께나까
Original Assignee
세이꼬 엡슨 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1028942A external-priority patent/JPH02208937A/ja
Application filed by 세이꼬 엡슨 가부시끼가이샤 filed Critical 세이꼬 엡슨 가부시끼가이샤
Publication of KR900012368A publication Critical patent/KR900012368A/ko
Application granted granted Critical
Publication of KR940006708B1 publication Critical patent/KR940006708B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1272—Semiconductive ceramic capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • H01L21/31155—Doping the insulating layers by ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
KR1019900000602A 1989-01-26 1990-01-19 반도체 장치의 제조 방법 KR940006708B1 (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP28942 1987-02-09
JP17218 1989-01-26
JP1721889 1989-01-26
JP18711 1989-01-27
JP1871189 1989-01-27
JP1871089 1989-01-27
JP18710 1989-01-27
JP1028942A JPH02208937A (ja) 1989-02-08 1989-02-08 強誘電体膜の製造方法

Publications (2)

Publication Number Publication Date
KR900012368A true KR900012368A (ko) 1990-08-04
KR940006708B1 KR940006708B1 (ko) 1994-07-25

Family

ID=27456742

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900000602A KR940006708B1 (ko) 1989-01-26 1990-01-19 반도체 장치의 제조 방법

Country Status (4)

Country Link
US (1) US5043049A (ko)
EP (1) EP0380326B1 (ko)
KR (1) KR940006708B1 (ko)
DE (1) DE69015216T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR100555494B1 (ko) * 2000-02-21 2006-03-03 삼성전자주식회사 오존 어닐링 공정을 이용한 반도체 장치의 커패시터제조방법

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DE4041271C2 (de) * 1989-12-25 1998-10-08 Toshiba Kawasaki Kk Halbleitervorrichtung mit einem ferroelektrischen Kondensator
JPH0499057A (ja) * 1990-08-07 1992-03-31 Seiko Epson Corp 半導体装置とその製造方法
US5866926A (en) * 1990-09-28 1999-02-02 Ramtron International Corporation Ferroelectric memory device with capacitor electrode in direct contact with source region
JPH04137662A (ja) * 1990-09-28 1992-05-12 Seiko Epson Corp 半導体装置
EP0490288A3 (en) * 1990-12-11 1992-09-02 Ramtron Corporation Process for fabricating pzt capacitors as integrated circuit memory elements and a capacitor storage element
US5242707A (en) * 1990-12-21 1993-09-07 Regents Of The University Of California System and method for producing electro-optic components integrable with silicon-on-sapphire circuits
US5648114A (en) * 1991-12-13 1997-07-15 Symetrix Corporation Chemical vapor deposition process for fabricating layered superlattice materials
JP2715736B2 (ja) * 1991-06-28 1998-02-18 日本電気株式会社 半導体装置の製造方法
JPH0582801A (ja) * 1991-09-20 1993-04-02 Rohm Co Ltd 半導体集積回路のキヤパシタおよびこれを用いた不揮発性メモリ
US5443030A (en) * 1992-01-08 1995-08-22 Sharp Kabushiki Kaisha Crystallizing method of ferroelectric film
EP0557937A1 (en) * 1992-02-25 1993-09-01 Ramtron International Corporation Ozone gas processing for ferroelectric memory circuits
US5721043A (en) * 1992-05-29 1998-02-24 Texas Instruments Incorporated Method of forming improved thin film dielectrics by Pb doping
EP0571949A1 (en) 1992-05-29 1993-12-01 Texas Instruments Incorporated Pb rich perovskites for thin film dielectrics
DE69315125T2 (de) * 1992-06-18 1998-06-10 Matsushita Electronics Corp Herstellungsverfahren für Halbleiterbauelement mit Kondensator
JP3407204B2 (ja) * 1992-07-23 2003-05-19 オリンパス光学工業株式会社 強誘電体集積回路及びその製造方法
US6664115B2 (en) * 1992-10-23 2003-12-16 Symetrix Corporation Metal insulator structure with polarization-compatible buffer layer
DE69331538T2 (de) * 1992-12-01 2002-08-29 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung einer elektrischen Dünnschicht
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JPH1056145A (ja) * 1996-08-07 1998-02-24 Hitachi Ltd 半導体集積回路装置の製造方法
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JPH1154721A (ja) * 1997-07-29 1999-02-26 Nec Corp 半導体装置の製造方法および製造装置
US7012292B1 (en) 1998-11-25 2006-03-14 Advanced Technology Materials, Inc Oxidative top electrode deposition process, and microelectronic device structure
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KR100593141B1 (ko) * 2004-10-01 2006-06-26 주식회사 하이닉스반도체 반도체 소자의 커패시터 제조방법
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US7750173B2 (en) 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
JP5076543B2 (ja) * 2007-02-21 2012-11-21 富士通セミコンダクター株式会社 半導体装置の製造方法
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JP5410780B2 (ja) * 2009-02-18 2014-02-05 富士フイルム株式会社 成膜方法、成膜装置、圧電体膜、圧電素子、及び液体吐出装置
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100555494B1 (ko) * 2000-02-21 2006-03-03 삼성전자주식회사 오존 어닐링 공정을 이용한 반도체 장치의 커패시터제조방법

Also Published As

Publication number Publication date
US5043049A (en) 1991-08-27
EP0380326A3 (en) 1992-03-11
KR940006708B1 (ko) 1994-07-25
EP0380326B1 (en) 1994-12-21
DE69015216D1 (de) 1995-02-02
DE69015216T2 (de) 1995-05-04
EP0380326A2 (en) 1990-08-01

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