KR900007072A - 반도체장치의 제조방법 - Google Patents
반도체장치의 제조방법Info
- Publication number
- KR900007072A KR900007072A KR1019890015435A KR890015435A KR900007072A KR 900007072 A KR900007072 A KR 900007072A KR 1019890015435 A KR1019890015435 A KR 1019890015435A KR 890015435 A KR890015435 A KR 890015435A KR 900007072 A KR900007072 A KR 900007072A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/949—Energy beam treating radiation resist on semiconductor
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP(A)63-268298 | 1988-10-26 | ||
JP63268298A JPH02115853A (ja) | 1988-10-26 | 1988-10-26 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900007072A true KR900007072A (ko) | 1990-05-09 |
KR930001670B1 KR930001670B1 (ko) | 1993-03-08 |
Family
ID=17456584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890015435A KR930001670B1 (ko) | 1988-10-26 | 1989-10-26 | 반도체장치의 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5068169A (ko) |
EP (1) | EP0366460A3 (ko) |
JP (1) | JPH02115853A (ko) |
KR (1) | KR930001670B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220001827A (ko) * | 2020-06-30 | 2022-01-06 | 현대제철 주식회사 | 냉연 강판의 제조 방법 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2685075B2 (ja) * | 1988-11-29 | 1997-12-03 | 富士通株式会社 | 二層構造ポジ型レジストの上層レジスト |
JPH0442229A (ja) * | 1990-06-08 | 1992-02-12 | Fujitsu Ltd | レジスト材料およびパターンの形成方法 |
JPH06332196A (ja) * | 1993-05-24 | 1994-12-02 | Nippon Paint Co Ltd | レジストパターンの形成方法 |
JP2980149B2 (ja) * | 1993-09-24 | 1999-11-22 | 富士通株式会社 | レジスト材料およびパターン形成方法 |
KR0156316B1 (ko) * | 1995-09-13 | 1998-12-01 | 김광호 | 반도체장치의 패턴 형성방법 |
US6139647A (en) * | 1995-12-21 | 2000-10-31 | International Business Machines Corporation | Selective removal of vertical portions of a film |
US5767017A (en) * | 1995-12-21 | 1998-06-16 | International Business Machines Corporation | Selective removal of vertical portions of a film |
US5985524A (en) * | 1997-03-28 | 1999-11-16 | International Business Machines Incorporated | Process for using bilayer photoresist |
US6444408B1 (en) * | 2000-02-28 | 2002-09-03 | International Business Machines Corporation | High silicon content monomers and polymers suitable for 193 nm bilayer resists |
JP2020095068A (ja) * | 2017-03-31 | 2020-06-18 | 富士フイルム株式会社 | パターン形成方法、電子デバイスの製造方法 |
WO2020171006A1 (ja) * | 2019-02-22 | 2020-08-27 | Jsr株式会社 | 半導体基板の製造方法及び組成物 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4551417A (en) * | 1982-06-08 | 1985-11-05 | Nec Corporation | Method of forming patterns in manufacturing microelectronic devices |
US4481049A (en) * | 1984-03-02 | 1984-11-06 | At&T Bell Laboratories | Bilevel resist |
US4770977A (en) * | 1984-09-21 | 1988-09-13 | Commissariat A L'energie Atomique | Silicon-containing polymer and its use as a masking resin in a lithography process |
FR2570844B1 (fr) * | 1984-09-21 | 1986-11-14 | Commissariat Energie Atomique | Film photosensible a base de polymere silicie et son utilisation comme resine de masquage dans un procede de lithographie |
JPH067263B2 (ja) * | 1985-08-19 | 1994-01-26 | 富士写真フイルム株式会社 | 光可溶化組成物 |
US4665006A (en) * | 1985-12-09 | 1987-05-12 | International Business Machines Corporation | Positive resist system having high resistance to oxygen reactive ion etching |
-
1988
- 1988-10-26 JP JP63268298A patent/JPH02115853A/ja active Pending
-
1989
- 1989-10-26 US US07/426,755 patent/US5068169A/en not_active Expired - Lifetime
- 1989-10-26 KR KR1019890015435A patent/KR930001670B1/ko not_active IP Right Cessation
- 1989-10-26 EP EP89311041A patent/EP0366460A3/en not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220001827A (ko) * | 2020-06-30 | 2022-01-06 | 현대제철 주식회사 | 냉연 강판의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
JPH02115853A (ja) | 1990-04-27 |
EP0366460A2 (en) | 1990-05-02 |
EP0366460A3 (en) | 1990-08-29 |
KR930001670B1 (ko) | 1993-03-08 |
US5068169A (en) | 1991-11-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20050225 Year of fee payment: 13 |
|
LAPS | Lapse due to unpaid annual fee |