KR890012373A - 반도체장치의 제조방법 - Google Patents
반도체장치의 제조방법Info
- Publication number
- KR890012373A KR890012373A KR1019890000322A KR890000322A KR890012373A KR 890012373 A KR890012373 A KR 890012373A KR 1019890000322 A KR1019890000322 A KR 1019890000322A KR 890000322 A KR890000322 A KR 890000322A KR 890012373 A KR890012373 A KR 890012373A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-4878 | 1988-01-14 | ||
JP63004878A JP2624736B2 (ja) | 1988-01-14 | 1988-01-14 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890012373A true KR890012373A (ko) | 1989-08-26 |
KR960012298B1 KR960012298B1 (ko) | 1996-09-18 |
Family
ID=11595927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890000322A KR960012298B1 (ko) | 1988-01-14 | 1989-01-13 | 반도체장치의 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5132756A (ko) |
JP (1) | JP2624736B2 (ko) |
KR (1) | KR960012298B1 (ko) |
DE (1) | DE3901114C2 (ko) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6081034A (en) | 1992-06-12 | 2000-06-27 | Micron Technology, Inc. | Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer |
US5218511A (en) * | 1992-06-22 | 1993-06-08 | Vlsi Technology, Inc. | Inter-silicide capacitor |
JPH0629521A (ja) * | 1992-07-07 | 1994-02-04 | Nec Corp | Mos型電界効果トランジスタの製造方法 |
US5506449A (en) * | 1993-03-24 | 1996-04-09 | Kawasaki Steel Corporation | Interconnection structure for semiconductor integrated circuit and manufacture of the same |
US5470775A (en) * | 1993-11-09 | 1995-11-28 | Vlsi Technology, Inc. | Method of forming a polysilicon-on-silicide capacitor |
DE69517158T2 (de) * | 1994-11-30 | 2001-01-25 | Micron Technology Inc | Verfahren zum auftragen von wolframnitrid unter verwendung eines silicium enthaltenden gases |
KR0147626B1 (ko) * | 1995-03-30 | 1998-11-02 | 김광호 | 타이타늄 카본 나이트라이드 게이트전극 형성방법 |
US5756396A (en) * | 1996-05-06 | 1998-05-26 | Taiwan Semiconductor Manufacturing Company Ltd | Method of making a multi-layer wiring structure having conductive sidewall etch stoppers and a stacked plug interconnect |
KR100325383B1 (ko) * | 1996-07-12 | 2002-04-17 | 니시무로 타이죠 | 반도체 장치 및 그 제조 방법 |
US6337520B1 (en) | 1997-02-26 | 2002-01-08 | Samsung Electronics Co., Ltd. | Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and manufacturing method thereof |
US6445004B1 (en) | 1998-02-26 | 2002-09-03 | Samsung Electronics Co., Ltd. | Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof |
TW454339B (en) * | 1997-06-20 | 2001-09-11 | Hitachi Ltd | Semiconductor integrated circuit apparatus and its fabricating method |
US6162715A (en) * | 1997-06-30 | 2000-12-19 | Applied Materials, Inc. | Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride |
US6020242A (en) * | 1997-09-04 | 2000-02-01 | Lsi Logic Corporation | Effective silicide blocking |
US5962904A (en) * | 1997-09-16 | 1999-10-05 | Micron Technology, Inc. | Gate electrode stack with diffusion barrier |
US6218276B1 (en) | 1997-12-22 | 2001-04-17 | Lsi Logic Corporation | Silicide encapsulation of polysilicon gate and interconnect |
US6037233A (en) * | 1998-04-27 | 2000-03-14 | Lsi Logic Corporation | Metal-encapsulated polysilicon gate and interconnect |
US6614083B1 (en) * | 1999-03-17 | 2003-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Wiring material and a semiconductor device having wiring using the material, and the manufacturing method |
KR100294697B1 (ko) * | 1999-06-16 | 2001-07-12 | 김영환 | 반도체 소자의 전도성 라인 형성 방법 |
US7245018B1 (en) | 1999-06-22 | 2007-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof |
JP2001036072A (ja) * | 1999-07-16 | 2001-02-09 | Mitsubishi Electric Corp | 半導体装置及び半導体装置の製造方法 |
US6265297B1 (en) * | 1999-09-01 | 2001-07-24 | Micron Technology, Inc. | Ammonia passivation of metal gate electrodes to inhibit oxidation of metal |
US6372618B2 (en) * | 2000-01-06 | 2002-04-16 | Micron Technology, Inc. | Methods of forming semiconductor structures |
US6348380B1 (en) * | 2000-08-25 | 2002-02-19 | Micron Technology, Inc. | Use of dilute steam ambient for improvement of flash devices |
US6458714B1 (en) | 2000-11-22 | 2002-10-01 | Micron Technology, Inc. | Method of selective oxidation in semiconductor manufacture |
KR100441681B1 (ko) * | 2001-03-12 | 2004-07-27 | 삼성전자주식회사 | 금속 게이트 형성 방법 |
DE10157538B4 (de) * | 2001-11-23 | 2006-05-11 | Infineon Technologies Ag | Feldeffekttransistor sowie Verfahren zu seiner Herstellung |
KR100486248B1 (ko) * | 2002-07-09 | 2005-05-03 | 삼성전자주식회사 | 실리콘옥사이드층을 포함하는 반도체소자의 제조방법 |
US20050095763A1 (en) * | 2003-10-29 | 2005-05-05 | Samavedam Srikanth B. | Method of forming an NMOS transistor and structure thereof |
WO2006016642A1 (ja) * | 2004-08-13 | 2006-02-16 | Tokyo Electron Limited | 半導体装置の製造方法およびプラズマ酸化処理方法 |
US7906440B2 (en) * | 2005-02-01 | 2011-03-15 | Tokyo Electron Limited | Semiconductor device manufacturing method and plasma oxidation method |
US7592262B2 (en) * | 2007-03-21 | 2009-09-22 | United Microelectronics Corp. | Method for manufacturing MOS transistors utilizing a hybrid hard mask |
US20090269939A1 (en) * | 2008-04-25 | 2009-10-29 | Asm International, N.V. | Cyclical oxidation process |
US9127340B2 (en) * | 2009-02-13 | 2015-09-08 | Asm International N.V. | Selective oxidation process |
US8889565B2 (en) * | 2009-02-13 | 2014-11-18 | Asm International N.V. | Selective removal of oxygen from metal-containing materials |
US7829457B2 (en) * | 2009-02-20 | 2010-11-09 | Asm International N.V. | Protection of conductors from oxidation in deposition chambers |
US8507388B2 (en) | 2010-04-26 | 2013-08-13 | Asm International N.V. | Prevention of oxidation of substrate surfaces in process chambers |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1055884B (it) * | 1976-02-17 | 1982-01-11 | Montedison Spa | Procedimento ad arco plasma di prodotti ceramici metallici e simili |
US4263058A (en) * | 1979-06-11 | 1981-04-21 | General Electric Company | Composite conductive structures in integrated circuits and method of making same |
US4356623A (en) * | 1980-09-15 | 1982-11-02 | Texas Instruments Incorporated | Fabrication of submicron semiconductor devices |
US4445266A (en) * | 1981-08-07 | 1984-05-01 | Mostek Corporation | MOSFET Fabrication process for reducing overlap capacitance and lowering interconnect impedance |
US4429011A (en) * | 1982-03-29 | 1984-01-31 | General Electric Company | Composite conductive structures and method of making same |
JPS5933880A (ja) * | 1982-08-19 | 1984-02-23 | Nec Corp | 半導体装置の製造方法 |
JPS5991685A (ja) * | 1982-11-17 | 1984-05-26 | 株式会社デンソー | セラミツクヒ−タ |
JPS59188974A (ja) * | 1983-04-11 | 1984-10-26 | Nec Corp | 半導体装置の製造方法 |
US4503601A (en) * | 1983-04-18 | 1985-03-12 | Ncr Corporation | Oxide trench structure for polysilicon gates and interconnects |
US4502209A (en) * | 1983-08-31 | 1985-03-05 | At&T Bell Laboratories | Forming low-resistance contact to silicon |
US4640004A (en) * | 1984-04-13 | 1987-02-03 | Fairchild Camera & Instrument Corp. | Method and structure for inhibiting dopant out-diffusion |
JPS6213075A (ja) * | 1985-07-10 | 1987-01-21 | Nec Corp | 半導体装置 |
-
1988
- 1988-01-14 JP JP63004878A patent/JP2624736B2/ja not_active Expired - Fee Related
-
1989
- 1989-01-13 KR KR1019890000322A patent/KR960012298B1/ko not_active IP Right Cessation
- 1989-01-16 DE DE3901114A patent/DE3901114C2/de not_active Expired - Fee Related
-
1990
- 1990-10-24 US US07/601,042 patent/US5132756A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE3901114C2 (de) | 1995-03-30 |
JP2624736B2 (ja) | 1997-06-25 |
DE3901114A1 (de) | 1989-07-27 |
JPH01186675A (ja) | 1989-07-26 |
KR960012298B1 (ko) | 1996-09-18 |
US5132756A (en) | 1992-07-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20030901 Year of fee payment: 8 |
|
LAPS | Lapse due to unpaid annual fee |