KR860006832A - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법

Info

Publication number
KR860006832A
KR860006832A KR1019860000932A KR860000932A KR860006832A KR 860006832 A KR860006832 A KR 860006832A KR 1019860000932 A KR1019860000932 A KR 1019860000932A KR 860000932 A KR860000932 A KR 860000932A KR 860006832 A KR860006832 A KR 860006832A
Authority
KR
South Korea
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
KR1019860000932A
Other languages
English (en)
Other versions
KR900001245B1 (ko
Inventor
신이찌 다까
지로오 오오시마
마사히로 아베
마사하루 아오야마
Original Assignee
가부시끼가이샤 도오시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 도오시바 filed Critical 가부시끼가이샤 도오시바
Publication of KR860006832A publication Critical patent/KR860006832A/ko
Application granted granted Critical
Publication of KR900001245B1 publication Critical patent/KR900001245B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Element Separation (AREA)
  • Drying Of Semiconductors (AREA)
KR1019860000932A 1985-02-20 1986-02-11 반도체장치의 제조방법 KR900001245B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60030576A JPS61191043A (ja) 1985-02-20 1985-02-20 半導体装置
US60-30576 1985-02-20

Publications (2)

Publication Number Publication Date
KR860006832A true KR860006832A (ko) 1986-09-15
KR900001245B1 KR900001245B1 (ko) 1990-03-05

Family

ID=12307673

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860000932A KR900001245B1 (ko) 1985-02-20 1986-02-11 반도체장치의 제조방법

Country Status (5)

Country Link
US (1) US4717682A (ko)
EP (1) EP0193116B1 (ko)
JP (1) JPS61191043A (ko)
KR (1) KR900001245B1 (ko)
DE (1) DE3673437D1 (ko)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3320944C2 (de) * 1982-06-21 1997-03-27 Young Eng Glättvorrichtung für Bahnkanten
US4929996A (en) * 1988-06-29 1990-05-29 Texas Instruments Incorporated Trench bipolar transistor
US5188971A (en) * 1988-12-28 1993-02-23 Synergy Semiconductor Corporation Process for making a self-aligned bipolar sinker structure
US5213994A (en) * 1989-05-30 1993-05-25 Motorola, Inc. Method of making high voltage semiconductor device
KR940006696B1 (ko) * 1991-01-16 1994-07-25 금성일렉트론 주식회사 반도체 소자의 격리막 형성방법
US5250837A (en) * 1991-05-17 1993-10-05 Delco Electronics Corporation Method for dielectrically isolating integrated circuits using doped oxide sidewalls
US5358884A (en) * 1992-09-11 1994-10-25 Micron Technology, Inc. Dual purpose collector contact and isolation scheme for advanced bicmos processes
US5275965A (en) * 1992-11-25 1994-01-04 Micron Semiconductor, Inc. Trench isolation using gated sidewalls
JP2914117B2 (ja) * 1993-08-28 1999-06-28 日本電気株式会社 半導体装置の製造方法
US5387540A (en) * 1993-09-30 1995-02-07 Motorola Inc. Method of forming trench isolation structure in an integrated circuit
US5856700A (en) * 1996-05-08 1999-01-05 Harris Corporation Semiconductor device with doped semiconductor and dielectric trench sidewall layers
US6069384A (en) * 1997-03-04 2000-05-30 Advanced Micro Devices, Inc. Integrated circuit including vertical transistors with spacer gates having selected gate widths
US5933717A (en) * 1997-03-04 1999-08-03 Advanced Micro Devices, Inc. Vertical transistor interconnect structure and fabrication method thereof
US6097076A (en) 1997-03-25 2000-08-01 Micron Technology, Inc. Self-aligned isolation trench
SE513471C2 (sv) 1997-11-17 2000-09-18 Ericsson Telefon Ab L M Halvledarkomponent och tillverkningsförfarande för halvledarkomponent
US6153934A (en) * 1998-07-30 2000-11-28 International Business Machines Corporation Buried butted contact and method for fabricating
US20060076629A1 (en) * 2004-10-07 2006-04-13 Hamza Yilmaz Semiconductor devices with isolation and sinker regions containing trenches filled with conductive material
GB0507157D0 (en) * 2005-04-08 2005-05-18 Ami Semiconductor Belgium Bvba Double trench for isolation of semiconductor devices
US7982284B2 (en) * 2006-06-28 2011-07-19 Infineon Technologies Ag Semiconductor component including an isolation structure and a contact to the substrate
US7691734B2 (en) * 2007-03-01 2010-04-06 International Business Machines Corporation Deep trench based far subcollector reachthrough

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3947299A (en) * 1971-05-22 1976-03-30 U.S. Philips Corporation Method of manufacturing semiconductor devices
US4140558A (en) * 1978-03-02 1979-02-20 Bell Telephone Laboratories, Incorporated Isolation of integrated circuits utilizing selective etching and diffusion
US4488162A (en) * 1980-07-08 1984-12-11 International Business Machines Corporation Self-aligned metal field effect transistor integrated circuits using polycrystalline silicon gate electrodes
US4322883A (en) * 1980-07-08 1982-04-06 International Business Machines Corporation Self-aligned metal process for integrated injection logic integrated circuits
JPS5734331A (en) * 1980-08-11 1982-02-24 Toshiba Corp Manufacture of semiconductor device
DE3168688D1 (en) * 1980-11-06 1985-03-14 Toshiba Kk Method for manufacturing a semiconductor device
FR2498812A1 (fr) * 1981-01-27 1982-07-30 Thomson Csf Structure de transistors dans un circuit integre et son procede de fabrication
US4508579A (en) * 1981-03-30 1985-04-02 International Business Machines Corporation Lateral device structures using self-aligned fabrication techniques
JPS59220952A (ja) * 1983-05-31 1984-12-12 Toshiba Corp 半導体装置の製造方法
US4507853A (en) * 1982-08-23 1985-04-02 Texas Instruments Incorporated Metallization process for integrated circuits
JPS5992548A (ja) * 1982-11-18 1984-05-28 Toshiba Corp 半導体装置及びその製造方法
US4549927A (en) * 1984-06-29 1985-10-29 International Business Machines Corporation Method of selectively exposing the sidewalls of a trench and its use to the forming of a metal silicide substrate contact for dielectric filled deep trench isolated devices
US4589193A (en) * 1984-06-29 1986-05-20 International Business Machines Corporation Metal silicide channel stoppers for integrated circuits and method for making the same

Also Published As

Publication number Publication date
KR900001245B1 (ko) 1990-03-05
JPS61191043A (ja) 1986-08-25
US4717682A (en) 1988-01-05
DE3673437D1 (de) 1990-09-20
EP0193116B1 (en) 1990-08-16
EP0193116A2 (en) 1986-09-03
EP0193116A3 (en) 1987-08-19

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Legal Events

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A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
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