DE3673437D1 - Verfahren zum herstellen eines halbleiterbauelements mit einem graben. - Google Patents
Verfahren zum herstellen eines halbleiterbauelements mit einem graben.Info
- Publication number
- DE3673437D1 DE3673437D1 DE8686102225T DE3673437T DE3673437D1 DE 3673437 D1 DE3673437 D1 DE 3673437D1 DE 8686102225 T DE8686102225 T DE 8686102225T DE 3673437 T DE3673437 T DE 3673437T DE 3673437 D1 DE3673437 D1 DE 3673437D1
- Authority
- DE
- Germany
- Prior art keywords
- trench
- producing
- semiconductor component
- semiconductor
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Element Separation (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60030576A JPS61191043A (ja) | 1985-02-20 | 1985-02-20 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3673437D1 true DE3673437D1 (de) | 1990-09-20 |
Family
ID=12307673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686102225T Expired - Lifetime DE3673437D1 (de) | 1985-02-20 | 1986-02-20 | Verfahren zum herstellen eines halbleiterbauelements mit einem graben. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4717682A (de) |
EP (1) | EP0193116B1 (de) |
JP (1) | JPS61191043A (de) |
KR (1) | KR900001245B1 (de) |
DE (1) | DE3673437D1 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3320944C2 (de) * | 1982-06-21 | 1997-03-27 | Young Eng | Glättvorrichtung für Bahnkanten |
US4929996A (en) * | 1988-06-29 | 1990-05-29 | Texas Instruments Incorporated | Trench bipolar transistor |
US5188971A (en) * | 1988-12-28 | 1993-02-23 | Synergy Semiconductor Corporation | Process for making a self-aligned bipolar sinker structure |
US5213994A (en) * | 1989-05-30 | 1993-05-25 | Motorola, Inc. | Method of making high voltage semiconductor device |
KR940006696B1 (ko) * | 1991-01-16 | 1994-07-25 | 금성일렉트론 주식회사 | 반도체 소자의 격리막 형성방법 |
US5250837A (en) * | 1991-05-17 | 1993-10-05 | Delco Electronics Corporation | Method for dielectrically isolating integrated circuits using doped oxide sidewalls |
US5358884A (en) * | 1992-09-11 | 1994-10-25 | Micron Technology, Inc. | Dual purpose collector contact and isolation scheme for advanced bicmos processes |
US5275965A (en) * | 1992-11-25 | 1994-01-04 | Micron Semiconductor, Inc. | Trench isolation using gated sidewalls |
JP2914117B2 (ja) * | 1993-08-28 | 1999-06-28 | 日本電気株式会社 | 半導体装置の製造方法 |
US5387540A (en) * | 1993-09-30 | 1995-02-07 | Motorola Inc. | Method of forming trench isolation structure in an integrated circuit |
US5856700A (en) * | 1996-05-08 | 1999-01-05 | Harris Corporation | Semiconductor device with doped semiconductor and dielectric trench sidewall layers |
US6069384A (en) * | 1997-03-04 | 2000-05-30 | Advanced Micro Devices, Inc. | Integrated circuit including vertical transistors with spacer gates having selected gate widths |
US5933717A (en) * | 1997-03-04 | 1999-08-03 | Advanced Micro Devices, Inc. | Vertical transistor interconnect structure and fabrication method thereof |
US6097076A (en) * | 1997-03-25 | 2000-08-01 | Micron Technology, Inc. | Self-aligned isolation trench |
SE513471C2 (sv) * | 1997-11-17 | 2000-09-18 | Ericsson Telefon Ab L M | Halvledarkomponent och tillverkningsförfarande för halvledarkomponent |
US6153934A (en) * | 1998-07-30 | 2000-11-28 | International Business Machines Corporation | Buried butted contact and method for fabricating |
US20060076629A1 (en) * | 2004-10-07 | 2006-04-13 | Hamza Yilmaz | Semiconductor devices with isolation and sinker regions containing trenches filled with conductive material |
GB0507157D0 (en) * | 2005-04-08 | 2005-05-18 | Ami Semiconductor Belgium Bvba | Double trench for isolation of semiconductor devices |
US7982284B2 (en) * | 2006-06-28 | 2011-07-19 | Infineon Technologies Ag | Semiconductor component including an isolation structure and a contact to the substrate |
US7691734B2 (en) * | 2007-03-01 | 2010-04-06 | International Business Machines Corporation | Deep trench based far subcollector reachthrough |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3947299A (en) * | 1971-05-22 | 1976-03-30 | U.S. Philips Corporation | Method of manufacturing semiconductor devices |
US4140558A (en) * | 1978-03-02 | 1979-02-20 | Bell Telephone Laboratories, Incorporated | Isolation of integrated circuits utilizing selective etching and diffusion |
US4322883A (en) * | 1980-07-08 | 1982-04-06 | International Business Machines Corporation | Self-aligned metal process for integrated injection logic integrated circuits |
US4488162A (en) * | 1980-07-08 | 1984-12-11 | International Business Machines Corporation | Self-aligned metal field effect transistor integrated circuits using polycrystalline silicon gate electrodes |
JPS5734331A (en) * | 1980-08-11 | 1982-02-24 | Toshiba Corp | Manufacture of semiconductor device |
EP0051488B1 (de) * | 1980-11-06 | 1985-01-30 | Kabushiki Kaisha Toshiba | Verfahren zur Herstellung eines Halbleiterbauelements |
FR2498812A1 (fr) * | 1981-01-27 | 1982-07-30 | Thomson Csf | Structure de transistors dans un circuit integre et son procede de fabrication |
US4508579A (en) * | 1981-03-30 | 1985-04-02 | International Business Machines Corporation | Lateral device structures using self-aligned fabrication techniques |
JPS59220952A (ja) * | 1983-05-31 | 1984-12-12 | Toshiba Corp | 半導体装置の製造方法 |
US4507853A (en) * | 1982-08-23 | 1985-04-02 | Texas Instruments Incorporated | Metallization process for integrated circuits |
JPS5992548A (ja) * | 1982-11-18 | 1984-05-28 | Toshiba Corp | 半導体装置及びその製造方法 |
US4549927A (en) * | 1984-06-29 | 1985-10-29 | International Business Machines Corporation | Method of selectively exposing the sidewalls of a trench and its use to the forming of a metal silicide substrate contact for dielectric filled deep trench isolated devices |
US4589193A (en) * | 1984-06-29 | 1986-05-20 | International Business Machines Corporation | Metal silicide channel stoppers for integrated circuits and method for making the same |
-
1985
- 1985-02-20 JP JP60030576A patent/JPS61191043A/ja active Pending
-
1986
- 1986-02-11 KR KR1019860000932A patent/KR900001245B1/ko not_active IP Right Cessation
- 1986-02-19 US US06/830,928 patent/US4717682A/en not_active Expired - Lifetime
- 1986-02-20 DE DE8686102225T patent/DE3673437D1/de not_active Expired - Lifetime
- 1986-02-20 EP EP86102225A patent/EP0193116B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS61191043A (ja) | 1986-08-25 |
US4717682A (en) | 1988-01-05 |
EP0193116A2 (de) | 1986-09-03 |
KR900001245B1 (ko) | 1990-03-05 |
EP0193116B1 (de) | 1990-08-16 |
EP0193116A3 (en) | 1987-08-19 |
KR860006832A (ko) | 1986-09-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |