DE3483531D1 - Verfahren zum herstellen einer integrierten halbleiterschaltkreisanordnung mit einem misfet. - Google Patents
Verfahren zum herstellen einer integrierten halbleiterschaltkreisanordnung mit einem misfet.Info
- Publication number
- DE3483531D1 DE3483531D1 DE8484116283T DE3483531T DE3483531D1 DE 3483531 D1 DE3483531 D1 DE 3483531D1 DE 8484116283 T DE8484116283 T DE 8484116283T DE 3483531 T DE3483531 T DE 3483531T DE 3483531 D1 DE3483531 D1 DE 3483531D1
- Authority
- DE
- Germany
- Prior art keywords
- misfet
- producing
- circuit arrangement
- semiconductor circuit
- integrated semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823864—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59049042A JPH0693494B2 (ja) | 1984-03-16 | 1984-03-16 | 半導体集積回路装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3483531D1 true DE3483531D1 (de) | 1990-12-06 |
Family
ID=12820022
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484116283T Expired - Lifetime DE3483531D1 (de) | 1984-03-16 | 1984-12-24 | Verfahren zum herstellen einer integrierten halbleiterschaltkreisanordnung mit einem misfet. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4637124A (de) |
EP (1) | EP0164449B1 (de) |
JP (1) | JPH0693494B2 (de) |
KR (1) | KR850006656A (de) |
DE (1) | DE3483531D1 (de) |
HK (1) | HK20993A (de) |
SG (1) | SG102592G (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5276346A (en) * | 1983-12-26 | 1994-01-04 | Hitachi, Ltd. | Semiconductor integrated circuit device having protective/output elements and internal circuits |
US5610089A (en) * | 1983-12-26 | 1997-03-11 | Hitachi, Ltd. | Method of fabrication of semiconductor integrated circuit device |
JPH0695563B2 (ja) * | 1985-02-01 | 1994-11-24 | 株式会社日立製作所 | 半導体装置 |
JPS60241256A (ja) * | 1984-05-16 | 1985-11-30 | Hitachi Ltd | 半導体装置およびその製造方法 |
JPS61263137A (ja) * | 1985-05-07 | 1986-11-21 | Hitachi Ltd | 半導体装置 |
US4843023A (en) * | 1985-09-25 | 1989-06-27 | Hewlett-Packard Company | Process for forming lightly-doped-drain (LDD) without extra masking steps |
ES2033241T5 (es) * | 1985-12-04 | 1998-02-16 | Advanced Micro Devices Inc | Transistores de efecto de campo. |
US4735911A (en) * | 1985-12-17 | 1988-04-05 | Siemens Aktiengesellschaft | Process for the simultaneous production of bipolar and complementary MOS transistors on a common silicon substrate |
JPH0831602B2 (ja) * | 1986-06-30 | 1996-03-27 | 沖電気工業株式会社 | Mis型電界効果トランジスタの製造方法 |
US5215936A (en) * | 1986-10-09 | 1993-06-01 | Kabushiki Kaisha Toshiba | Method of fabricating a semiconductor device having a lightly-doped drain structure |
US4978628A (en) * | 1986-11-19 | 1990-12-18 | Teledyne Industries, Inc. | Drail-well/extension high voltage MOS transistor structure and method of fabrication |
US4801555A (en) * | 1987-01-14 | 1989-01-31 | Motorola, Inc. | Double-implant process for forming graded source/drain regions |
JPS63302566A (ja) * | 1987-06-02 | 1988-12-09 | Sanyo Electric Co Ltd | Mos半導体装置の製造方法 |
JPS63302565A (ja) * | 1987-06-02 | 1988-12-09 | Sanyo Electric Co Ltd | Mos半導体装置の製造方法 |
JPS63302567A (ja) * | 1987-06-02 | 1988-12-09 | Sanyo Electric Co Ltd | Mos半導体装置の製造方法 |
JPS63302568A (ja) * | 1987-06-02 | 1988-12-09 | Sanyo Electric Co Ltd | Mos半導体装置の製造方法 |
US4771014A (en) * | 1987-09-18 | 1988-09-13 | Sgs-Thomson Microelectronics, Inc. | Process for manufacturing LDD CMOS devices |
IT1223571B (it) * | 1987-12-21 | 1990-09-19 | Sgs Thomson Microelectronics | Procedimento per la fabbricazione di dispositivi integrati cmos con lunghezze di porta ridotte |
JPH01175260A (ja) * | 1987-12-29 | 1989-07-11 | Nec Corp | 絶縁ゲート電界効果トランジスタの製造方法 |
JPH01189962A (ja) * | 1988-01-26 | 1989-07-31 | Seiko Instr & Electron Ltd | 半導体集積回路装置の製造方法 |
US5075249A (en) * | 1988-04-04 | 1991-12-24 | Fujitsu Limited | Method of making a bic memory cell having contact openings with straight sidewalls and sharp-edge rims |
US5006477A (en) * | 1988-11-25 | 1991-04-09 | Hughes Aircraft Company | Method of making a latch up free, high voltage, CMOS bulk process for sub-half micron devices |
EP0405293B1 (de) * | 1989-06-27 | 1996-08-21 | National Semiconductor Corporation | Silicid-Übereinstimmendes CMOS-Verfahren mit einer differenzierten Oxid-Implantierungsmaske |
US5021353A (en) * | 1990-02-26 | 1991-06-04 | Micron Technology, Inc. | Split-polysilicon CMOS process incorporating self-aligned silicidation of conductive regions |
JPH0434968A (ja) * | 1990-05-30 | 1992-02-05 | Mitsubishi Electric Corp | 相補型電界効果トランジスタおよびその製造方法 |
KR100233558B1 (ko) * | 1996-06-29 | 1999-12-01 | 김영환 | 반도체 소자의 제조방법 |
US5943565A (en) * | 1997-09-05 | 1999-08-24 | Advanced Micro Devices, Inc. | CMOS processing employing separate spacers for independently optimized transistor performance |
US7880173B2 (en) * | 2002-06-28 | 2011-02-01 | National Institute Of Advanced Industrial Science And Technology | Semiconductor device and method of manufacturing same |
US9293577B2 (en) * | 2010-03-30 | 2016-03-22 | Volterra Semiconductor LLC | LDMOS with no reverse recovery |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4356623A (en) * | 1980-09-15 | 1982-11-02 | Texas Instruments Incorporated | Fabrication of submicron semiconductor devices |
US4366613A (en) * | 1980-12-17 | 1983-01-04 | Ibm Corporation | Method of fabricating an MOS dynamic RAM with lightly doped drain |
JPS5879766A (ja) * | 1981-11-06 | 1983-05-13 | Nec Corp | Mos型半導体装置の製造法 |
JPS58159345A (ja) * | 1982-03-18 | 1983-09-21 | Toshiba Corp | 半導体装置及びその製造方法 |
JPS58201362A (ja) * | 1982-05-20 | 1983-11-24 | Toshiba Corp | 半導体装置の製造方法 |
JPS5952849A (ja) * | 1982-09-20 | 1984-03-27 | Fujitsu Ltd | 半導体装置の製造方法 |
US4536944A (en) * | 1982-12-29 | 1985-08-27 | International Business Machines Corporation | Method of making ROM/PLA semiconductor device by late stage personalization |
JPS59138379A (ja) * | 1983-01-27 | 1984-08-08 | Toshiba Corp | 半導体装置の製造方法 |
DE3314450A1 (de) * | 1983-04-21 | 1984-10-25 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen |
-
1984
- 1984-03-16 JP JP59049042A patent/JPH0693494B2/ja not_active Expired - Lifetime
- 1984-12-24 EP EP84116283A patent/EP0164449B1/de not_active Expired - Lifetime
- 1984-12-24 DE DE8484116283T patent/DE3483531D1/de not_active Expired - Lifetime
-
1985
- 1985-02-25 KR KR1019850001158A patent/KR850006656A/ko not_active Application Discontinuation
- 1985-03-18 US US06/712,760 patent/US4637124A/en not_active Expired - Lifetime
-
1992
- 1992-10-07 SG SG1025/92A patent/SG102592G/en unknown
-
1993
- 1993-03-11 HK HK209/93A patent/HK20993A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPS60194568A (ja) | 1985-10-03 |
SG102592G (en) | 1992-12-24 |
EP0164449A2 (de) | 1985-12-18 |
KR850006656A (ko) | 1985-10-14 |
JPH0693494B2 (ja) | 1994-11-16 |
HK20993A (en) | 1993-03-19 |
EP0164449B1 (de) | 1990-10-31 |
EP0164449A3 (en) | 1987-01-07 |
US4637124A (en) | 1987-01-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8365 | Fully valid after opposition proceedings | ||
8339 | Ceased/non-payment of the annual fee |