ES2033241T5 - Transistores de efecto de campo. - Google Patents

Transistores de efecto de campo.

Info

Publication number
ES2033241T5
ES2033241T5 ES86309266T ES86309266T ES2033241T5 ES 2033241 T5 ES2033241 T5 ES 2033241T5 ES 86309266 T ES86309266 T ES 86309266T ES 86309266 T ES86309266 T ES 86309266T ES 2033241 T5 ES2033241 T5 ES 2033241T5
Authority
ES
Spain
Prior art keywords
subregion
conductivity type
region
field effect
predetermined
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES86309266T
Other languages
English (en)
Other versions
ES2033241T3 (es
Inventor
Yow-Juang Liu
Salvatore Cagnina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25190826&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES2033241(T5) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of ES2033241T3 publication Critical patent/ES2033241T3/es
Application granted granted Critical
Publication of ES2033241T5 publication Critical patent/ES2033241T5/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8236—Combination of enhancement and depletion transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)

Abstract

SE DESCRIBE UN DISPOSITIVO DE EFECTO DE CAMPO DE UN TRANSISTOR GEOMETRICO Y METODO DE FABRICACION. EL FET PUEDE SER OPERADO DESDE UN POTENCIAL DE POLARIZACION QUE FORMA UN CAMPO ELECTRICO ENTRE EL DISPOSITIVO EXCEDIENDO UNA PREDETERMINADA INTENSIDAD DE CAMPO. EL APARATO COMPRENDE UNA PORCION DE SUBSTRATO SEMICONDUCTOR DE UN PRIMER TIPO DE CONDUCTIVIDAD, QUE TIENE UNA SUPERFICIE PRINCIPAL Y UNA REGION DE UN SEGUNDO TIPO DE CONDUCTIVIDAD ADYACENTE A LA SUPERFICIE PRINCIPAL Y ADAPTADO PARA RECIBIR EL PREDETERMINADO POTENCIAL DE POLARIZACION, LA REGION INCLUYE UNA SUBREGION DE IGUAL TIPO DE CONDUCTIVIDAD Y MENOR CONDUCTIVIDAD, LA SUBREGION ESTA SITUADA ENTRE LA REGION PARA RECIBIR AL MENOS ESA PORCION DEL CAMPO ELECTRICO DIPLO INCLUYENDO Y EXCEDIENDO EL VALOR PREDETERMINADO.
ES86309266T 1985-12-04 1986-11-27 Transistores de efecto de campo. Expired - Lifetime ES2033241T5 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80516285A 1985-12-04 1985-12-04

Publications (2)

Publication Number Publication Date
ES2033241T3 ES2033241T3 (es) 1993-03-16
ES2033241T5 true ES2033241T5 (es) 1998-02-16

Family

ID=25190826

Family Applications (1)

Application Number Title Priority Date Filing Date
ES86309266T Expired - Lifetime ES2033241T5 (es) 1985-12-04 1986-11-27 Transistores de efecto de campo.

Country Status (6)

Country Link
EP (1) EP0228815B2 (es)
JP (1) JPS62134974A (es)
AT (1) ATE78364T1 (es)
DE (1) DE3686035T3 (es)
ES (1) ES2033241T5 (es)
GR (2) GR3005487T3 (es)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6480070A (en) * 1987-09-21 1989-03-24 Mitsubishi Electric Corp Semiconductor integrated circuit

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563873A (en) * 1978-11-07 1980-05-14 Seiko Epson Corp Semiconductor integrated circuit
JPS5843556A (ja) * 1981-09-08 1983-03-14 Toshiba Corp 相補型半導体装置の製造方法
JPH0644572B2 (ja) * 1983-03-23 1994-06-08 株式会社東芝 半導体装置の製造方法
JPS6017965A (ja) * 1983-07-11 1985-01-29 Toshiba Corp 半導体装置の製造方法
JPS6038879A (ja) * 1983-08-12 1985-02-28 Hitachi Ltd 半導体装置の製造方法
JPH0693494B2 (ja) * 1984-03-16 1994-11-16 株式会社日立製作所 半導体集積回路装置の製造方法
JPS60234367A (ja) * 1984-05-07 1985-11-21 Hitachi Ltd Ｍｉｓ型電界効果トランジスタ
JPS60241256A (ja) * 1984-05-16 1985-11-30 Hitachi Ltd 半導体装置およびその製造方法
JPS6165470A (ja) * 1984-09-07 1986-04-04 Hitachi Ltd 半導体集積回路装置
JPS61133656A (ja) * 1984-12-03 1986-06-20 Hitachi Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
DE3686035T3 (de) 1998-01-22
ES2033241T3 (es) 1993-03-16
GR3005487T3 (en) 1993-05-24
JPS62134974A (ja) 1987-06-18
EP0228815B2 (en) 1997-10-15
ATE78364T1 (de) 1992-08-15
EP0228815A3 (en) 1988-09-07
EP0228815A2 (en) 1987-07-15
DE3686035T2 (de) 1993-01-07
EP0228815B1 (en) 1992-07-15
DE3686035D1 (de) 1992-08-20
GR3025557T3 (en) 1998-03-31

Similar Documents

Publication Publication Date Title
KR900000817B1 (en) Semiconductor ic device manufacturing method
EP0215546A3 (en) Chemical-sensitive semiconductor device
DE3585239D1 (de) Transistorschaltung fuer halbleitervorrichtung mit hysterese-verhalten und ihre herstellungsverfahren.
ATE287127T1 (de) Struktur zur erhöhung der maximalen spannung von siliziumkarbid-leistungstransistoren
KR900001394B1 (en) Super high frequency intergrated circuit device
EP0304335A3 (en) Photosensor device
JPS5578577A (en) Method of fabricating field effect transistor utilizing one conductivity semiconductor substrate
ES2076468T3 (es) Dispositivo semiconductor que tiene un transistor mejorado con puerta aislada.
DE3673509D1 (de) Feldeffekttransistorverstaerkerschaltungen.
ES2033241T3 (es) Transistores de efecto de campo.
EP0299185A3 (en) Thin film field effect transistor
KR940004807A (ko) 반도체 집적 회로 장치 및 그 제조 방법
EP0160183A3 (en) High voltage mos field effect transistor
SE8403943D0 (sv) Felteffektanordning med berarutfrysning
KR930018757A (ko) 화합물 반도체장치
JPS5322379A (en) Junction type field eff ect transistor
DE3581842D1 (de) Integrierte halbleiterschaltung mit komplementaeren feldeffekttransistoren.
JPS53136977A (en) Driving circuit
SU1828339A1 (ru) ПОЛЕВОЙ ТРАНЗИСТОР С УПРАВЛЯЮЩИМ p-n-ПЕРЕХОДОМ
JPS6414960A (en) Semiconductor element
JPS6421972A (en) Semiconductor integrated circuit
JPS57147270A (en) Semiconductor device
JPS5661166A (en) Input protective circuit for insulating gate type electromagnetic effect transistor
KR970008561A (ko) 반도체장치의 입력보호 회로의 트랜지스터
JPS5683962A (en) Substrate bias circuit

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 228815

Country of ref document: ES