JPS6421972A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS6421972A JPS6421972A JP17934287A JP17934287A JPS6421972A JP S6421972 A JPS6421972 A JP S6421972A JP 17934287 A JP17934287 A JP 17934287A JP 17934287 A JP17934287 A JP 17934287A JP S6421972 A JPS6421972 A JP S6421972A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- bent
- source
- pattern
- drains
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To make possible a reduction in the size of a chip by a method wherein the gate pattern of an active element is bent and at the same time, a source and drains are arranged along the bent gate pattern. CONSTITUTION:In a semiconductor integrated circuit constituted by integrating a plurality of pieces of active elements, in each of which the currents between a source 1 and drains 3 are controlled by a voltage to be applied to the gate 2, in a constant array, the gate pattern of an active element among the above active elements is bent and at the same time, the active element, wherein the source 1 and the drains 3 and arranged along the bent gate pattern, is formed in the above semiconductor integrated circuit one piece or more. For example, two FETs, wherein the gate 2 and the source 1 are used in common and the direction of the gate is different from that of the source 1, are formed in a constitution, wherein the pattern of the gate 2 is bent at 90 deg. and at the same time, the drains 3a and 3b to correspond to the source 1 along the bent pattern of the gate 2 are arranged. Thereby, the density of integration of the active elements can be augmented and a reduction in the size of a chip becomes possible.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17934287A JPS6421972A (en) | 1987-07-16 | 1987-07-16 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17934287A JPS6421972A (en) | 1987-07-16 | 1987-07-16 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6421972A true JPS6421972A (en) | 1989-01-25 |
Family
ID=16064163
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17934287A Pending JPS6421972A (en) | 1987-07-16 | 1987-07-16 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6421972A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100228373B1 (en) * | 1995-07-11 | 1999-11-01 | 김영환 | Mos transistor |
KR100237628B1 (en) * | 1996-12-13 | 2000-01-15 | 김영환 | Semiconductor device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6053087A (en) * | 1983-09-02 | 1985-03-26 | Hitachi Ltd | Field-effect transistor |
JPS60149174A (en) * | 1984-01-17 | 1985-08-06 | Toshiba Corp | Field effect type semiconductor device |
JPS61232682A (en) * | 1985-04-09 | 1986-10-16 | Fujitsu Ltd | Field effect transistor |
-
1987
- 1987-07-16 JP JP17934287A patent/JPS6421972A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6053087A (en) * | 1983-09-02 | 1985-03-26 | Hitachi Ltd | Field-effect transistor |
JPS60149174A (en) * | 1984-01-17 | 1985-08-06 | Toshiba Corp | Field effect type semiconductor device |
JPS61232682A (en) * | 1985-04-09 | 1986-10-16 | Fujitsu Ltd | Field effect transistor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100228373B1 (en) * | 1995-07-11 | 1999-11-01 | 김영환 | Mos transistor |
KR100237628B1 (en) * | 1996-12-13 | 2000-01-15 | 김영환 | Semiconductor device |
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