ES2076468T3 - Dispositivo semiconductor que tiene un transistor mejorado con puerta aislada. - Google Patents

Dispositivo semiconductor que tiene un transistor mejorado con puerta aislada.

Info

Publication number
ES2076468T3
ES2076468T3 ES91305045T ES91305045T ES2076468T3 ES 2076468 T3 ES2076468 T3 ES 2076468T3 ES 91305045 T ES91305045 T ES 91305045T ES 91305045 T ES91305045 T ES 91305045T ES 2076468 T3 ES2076468 T3 ES 2076468T3
Authority
ES
Spain
Prior art keywords
semiconductor device
improved transistor
isolated door
gate
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91305045T
Other languages
English (en)
Inventor
Shigeyuki Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of ES2076468T3 publication Critical patent/ES2076468T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

UN DISPOSITIVO SEMICONDUCTOR QUE COMPRENDE UN TRANSISTOR DE TIPO PUERTA AISLADO PROVISTO DE UNA FUENTE Y DE REGIONES DE DRENAJE QUE COMPRENDEN SEMICONDUCTORES, UNA CAPA DE AISLAMIENTO DE PUERTA Y UNA REGION DE ELECTRODOS DE PUERTA. LA FUENTE, LAS REGIONES DE DRENAJE, LA CAPA DE AISLAMIENTO DE PUERTA Y LA REGION DE ELECTRODOS DE PUERTA ESTAN YUXTAPUESTAS EN DIRECCION A LO LARGO DE LA CARA PRINCIPAL DE UN SUSTRATO SEMICONDUCTOR. AL MENOS UNA PARTE DE LAS MISMAS SE ENTIERRA EN EL SUSTRATO.
ES91305045T 1990-06-04 1991-06-04 Dispositivo semiconductor que tiene un transistor mejorado con puerta aislada. Expired - Lifetime ES2076468T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2144544A JP2790362B2 (ja) 1990-06-04 1990-06-04 半導体装置

Publications (1)

Publication Number Publication Date
ES2076468T3 true ES2076468T3 (es) 1995-11-01

Family

ID=15364769

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91305045T Expired - Lifetime ES2076468T3 (es) 1990-06-04 1991-06-04 Dispositivo semiconductor que tiene un transistor mejorado con puerta aislada.

Country Status (9)

Country Link
US (1) US5302846A (es)
EP (1) EP0460918B1 (es)
JP (1) JP2790362B2 (es)
KR (1) KR950006482B1 (es)
CN (1) CN1032173C (es)
AT (1) ATE127618T1 (es)
DE (1) DE69112713T2 (es)
ES (1) ES2076468T3 (es)
MY (1) MY107193A (es)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512517A (en) * 1995-04-25 1996-04-30 International Business Machines Corporation Self-aligned gate sidewall spacer in a corrugated FET and method of making same
US5879971A (en) * 1995-09-28 1999-03-09 Motorola Inc. Trench random access memory cell and method of formation
US5705409A (en) * 1995-09-28 1998-01-06 Motorola Inc. Method for forming trench transistor structure
US5929476A (en) * 1996-06-21 1999-07-27 Prall; Kirk Semiconductor-on-insulator transistor and memory circuitry employing semiconductor-on-insulator transistors
US5838176A (en) * 1996-07-11 1998-11-17 Foveonics, Inc. Correlated double sampling circuit
DE19720193C2 (de) * 1997-05-14 2002-10-17 Infineon Technologies Ag Integrierte Schaltungsanordnung mit mindestens zwei vertikalen MOS-Transistoren und Verfahren zu deren Herstellung
US5886382A (en) * 1997-07-18 1999-03-23 Motorola, Inc. Trench transistor structure comprising at least two vertical transistors
US6500744B2 (en) 1999-09-02 2002-12-31 Micron Technology, Inc. Methods of forming DRAM assemblies, transistor devices, and openings in substrates
CN1632553A (zh) 1999-11-15 2005-06-29 松下电器产业株式会社 生物传感器、薄膜电极形成方法、定量装置及定量方法
US7745289B2 (en) * 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US9590065B2 (en) 2013-12-04 2017-03-07 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device with metal gate structure comprising work-function metal layer and work-fuction adjustment layer

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423478A (en) * 1977-07-25 1979-02-22 Toshiba Corp Semiconductor device of field effect type
JPS57192080A (en) * 1981-05-21 1982-11-26 Fujitsu Ltd Semiconductor device
JPS59129472A (ja) * 1983-01-14 1984-07-25 Sanyo Electric Co Ltd Ｍｏｓ型トランジスタ
JPS59228762A (ja) * 1983-06-10 1984-12-22 Hitachi Ltd マルチゲ−トトランジスタ
US4786953A (en) * 1984-07-16 1988-11-22 Nippon Telegraph & Telephone Vertical MOSFET and method of manufacturing the same
US4835585A (en) * 1984-11-26 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench gate structures
JPH0626251B2 (ja) * 1984-11-27 1994-04-06 アメリカン テレフオン アンド テレグラフ カムパニ− 溝トランジスタ
JPS62136877A (ja) * 1985-12-11 1987-06-19 Toshiba Corp 絶縁ゲ−ト型電界効果トランジスタ
GB2195663B (en) * 1986-08-15 1990-08-22 Nippon Telegraph & Telephone Chemical vapour deposition method and apparatus therefor
US4835584A (en) * 1986-11-27 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench transistor
US4910564A (en) * 1987-07-01 1990-03-20 Mitsubishi Denki Kabushiki Kaisha Highly integrated field effect transistor and method for manufacturing the same
JPS6421968A (en) * 1987-07-17 1989-01-25 Oki Electric Ind Co Ltd Vertical type mosfet device and manufacture thereof
JPH01183855A (ja) * 1988-01-18 1989-07-21 Mitsubishi Electric Corp Ｍｏｓ形トランジスタ
JPH0214578A (ja) * 1988-07-01 1990-01-18 Fujitsu Ltd 半導体装置
US5047812A (en) * 1989-02-27 1991-09-10 Motorola, Inc. Insulated gate field effect device
US4964080A (en) * 1990-03-09 1990-10-16 Intel Corporation Three-dimensional memory cell with integral select transistor

Also Published As

Publication number Publication date
CN1032173C (zh) 1996-06-26
EP0460918B1 (en) 1995-09-06
CN1057131A (zh) 1991-12-18
KR950006482B1 (ko) 1995-06-15
KR920001749A (ko) 1992-01-30
EP0460918A2 (en) 1991-12-11
MY107193A (en) 1995-09-30
ATE127618T1 (de) 1995-09-15
DE69112713T2 (de) 1996-02-22
EP0460918A3 (en) 1992-05-06
US5302846A (en) 1994-04-12
JP2790362B2 (ja) 1998-08-27
DE69112713D1 (de) 1995-10-12
JPH0438877A (ja) 1992-02-10

Similar Documents

Publication Publication Date Title
EP0312955A3 (en) Semiconductor device having an improved thin film transistor
DE69213539T2 (de) Halbleitervorrichtung mit verbessertem isoliertem Gate-Transistor
KR900008698A (ko) 반도체장치 및 반도체 기억장치
DK0760957T3 (da) Strålingsdetektor
KR910003816A (ko) 반도체기억장치의 셀구조
EP0459770A3 (en) Semiconductor device with gate structure and method for producing the same
EP0877425A3 (en) Field effect device with polycrystalline silicon channel
ES2076468T3 (es) Dispositivo semiconductor que tiene un transistor mejorado con puerta aislada.
JPS56162875A (en) Semiconductor device
KR960002880A (ko) 실리콘 온 인슐레이터(soi) 트랜지스터
EP0709897A4 (en) SEMICONDUCTOR DEVICE
KR910020740A (ko) 반도체기억장치
KR900019244A (ko) 반도체기억장치
EP0299185A3 (en) Thin film field effect transistor
KR920008964A (ko) 전송 전하 증폭 장치
KR930018757A (ko) 화합물 반도체장치
JPS6454762A (en) Insulated gate field effect transistor
JPS538080A (en) Insulated gate type field effect transistor
JPS57121271A (en) Field effect transistor
KR910007074A (ko) 박막 트랜지스터
JPS6461060A (en) Semiconductor device
KR930004726B1 (en) Manufacturing method of semiconductor element
KR970008561A (ko) 반도체장치의 입력보호 회로의 트랜지스터
KR970024260A (ko) 채널 영역 아래에 산화막을 가지는 트랜지스터
KR910016092A (ko) 고전압용 반도체 장치

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 460918

Country of ref document: ES