DK0760957T3 - Strålingsdetektor - Google Patents
StrålingsdetektorInfo
- Publication number
- DK0760957T3 DK0760957T3 DK94931057T DK94931057T DK0760957T3 DK 0760957 T3 DK0760957 T3 DK 0760957T3 DK 94931057 T DK94931057 T DK 94931057T DK 94931057 T DK94931057 T DK 94931057T DK 0760957 T3 DK0760957 T3 DK 0760957T3
- Authority
- DK
- Denmark
- Prior art keywords
- floating gate
- gas space
- mosfet transistor
- radiation detector
- dosimeter
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title abstract 3
- 239000004020 conductor Substances 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000005865 ionizing radiation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/02—Dosimeters
- G01T1/026—Semiconductor dose-rate meters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/26—Measuring radiation intensity with resistance detectors
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Molecular Biology (AREA)
- High Energy & Nuclear Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Measurement Of Radiation (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Curing Cements, Concrete, And Artificial Stone (AREA)
- Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI934784A FI934784A0 (fi) | 1993-10-28 | 1993-10-28 | Straolningsdetektor |
| PCT/FI1994/000487 WO1995012134A1 (en) | 1993-10-28 | 1994-10-28 | Radiation detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK0760957T3 true DK0760957T3 (da) | 1999-10-18 |
Family
ID=8538869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK94931057T DK0760957T3 (da) | 1993-10-28 | 1994-10-28 | Strålingsdetektor |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US5739541A (da) |
| EP (1) | EP0760957B1 (da) |
| JP (1) | JP3142295B2 (da) |
| CN (1) | CN1040363C (da) |
| AT (1) | ATE178719T1 (da) |
| AU (1) | AU7995794A (da) |
| CA (1) | CA2175224C (da) |
| DE (1) | DE69417770T2 (da) |
| DK (1) | DK0760957T3 (da) |
| ES (1) | ES2132433T3 (da) |
| FI (2) | FI934784A0 (da) |
| GR (1) | GR3030696T3 (da) |
| RU (1) | RU2138065C1 (da) |
| WO (1) | WO1995012134A1 (da) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI953240A0 (fi) * | 1995-06-30 | 1995-06-30 | Rados Technology Oy | Ljusdetektor |
| FI954041A0 (fi) * | 1995-08-28 | 1995-08-28 | Hidex Oy | Foerfarande foer detektering av radioaktivitet i ett stoedmaterial genom direkt detektering av jonisation |
| GB9517930D0 (en) | 1995-09-01 | 1995-11-01 | Imperial College | Electronically gated microstructure |
| GB9517927D0 (en) * | 1995-09-01 | 1995-11-01 | Imperial College | Optoelectrically gated microstructure |
| GB2364379B (en) * | 1997-08-11 | 2002-03-13 | Siemens Plc | Personal radiation dosemeter with electromagnetic and radiological screening |
| CA2215369C (en) | 1997-09-12 | 2008-11-18 | Nicholas Garry Tarr | Method of monitoring radiation using a floating gate field effect transistor dosimeter, and dosimeter for use therein |
| WO2000028337A2 (en) | 1998-11-06 | 2000-05-18 | Onguard Systems, Inc. | Electronic circuit with a non-continuous discharge path |
| US6414318B1 (en) | 1998-11-06 | 2002-07-02 | Bridge Semiconductor Corporation | Electronic circuit |
| FR2805889B1 (fr) * | 2000-03-03 | 2002-05-31 | Centre Nat Rech Scient | Dispositif amplificateur pour capteurs et systeme de mesure d'une grandeur physique equipe d'un tel dispositif |
| US6969859B2 (en) * | 2003-05-14 | 2005-11-29 | International Business Machines Corporation | Radiation detecting system |
| US7465937B2 (en) | 2003-06-27 | 2008-12-16 | Gesellschaft für Schwerionenforschung mbH | Dosimeter for the detection of high-energy neutron radiation |
| US7525431B2 (en) * | 2004-05-06 | 2009-04-28 | Ut-Battelle Llc | Space charge dosimeters for extremely low power measurements of radiation in shipping containers |
| CN101065684A (zh) * | 2004-11-23 | 2007-10-31 | 皇家飞利浦电子股份有限公司 | 辐射剂量计 |
| CN101730853B (zh) * | 2007-06-04 | 2012-12-05 | 卧龙岗大学 | 辐射传感器和剂量仪 |
| JP5031906B2 (ja) * | 2008-01-30 | 2012-09-26 | カーディアック ペースメイカーズ， インコーポレイテッド | 放射線効果検出方法および装置 |
| EP2924470B1 (en) * | 2008-04-07 | 2017-09-13 | Mirion Technologies, Inc. | Dosimetry apparatus, systems, and methods |
| JP6078474B2 (ja) | 2010-12-15 | 2017-02-08 | ミリオン テクノロジーズ，インコーポレイテッド | 線量測定システム、方法、および構成要素 |
| US20130056641A1 (en) * | 2011-09-01 | 2013-03-07 | Massachusetts Institute Of Technology | Solid-state neutron detector with gadolinium converter |
| RU2484554C1 (ru) * | 2011-12-27 | 2013-06-10 | Сергей Григорьевич Лазарев | Способ регистрации ионизирующих излучений |
| JP5984505B2 (ja) | 2012-05-22 | 2016-09-06 | 株式会社日立製作所 | 半導体ガスセンサおよびその製造方法 |
| US9063235B2 (en) | 2012-06-01 | 2015-06-23 | Landauer, Inc. | Algorithm for a wireless, motion and position-sensing, integrating radiation sensor for occupational and environmental dosimetry |
| CA2872729C (en) | 2012-06-01 | 2016-03-15 | Landauer, Inc. | Wireless, motion and position-sensing, integrating radiation sensor for occupational and environmental dosimetry |
| US9057786B2 (en) | 2012-06-01 | 2015-06-16 | Landauer, Inc. | Algorithm for a wireless, motion and position-sensing, integrating radiation sensor for occupational and environmental dosimetry |
| US8803089B2 (en) | 2012-06-01 | 2014-08-12 | Landauer, Inc. | System and method for wireless, motion and position-sensing, integrating radiation sensor for occupational and environmental dosimetry |
| WO2014197102A2 (en) | 2013-03-15 | 2014-12-11 | Starfire Industries Llc | Neutron radiation sensor |
| JP6072943B2 (ja) | 2013-05-31 | 2017-02-01 | ランダウアー インコーポレイテッド | 職業および環境線量測定用のワイヤレス動作および位置検知集積放射線センサ |
| KR101616959B1 (ko) * | 2013-07-02 | 2016-04-29 | 전자부품연구원 | Fet 이온센서 및 이를 이용한 시스템 |
| US9468406B2 (en) | 2013-08-20 | 2016-10-18 | European Space Agency | Dosimeter system |
| CN103523742B (zh) * | 2013-10-24 | 2016-01-13 | 北京大学 | 一种mos结构的辐射剂量探测器及其制备方法 |
| US9600208B2 (en) | 2014-11-21 | 2017-03-21 | Palo Alto Research Center Incorporated | Passive detector with nonvolatile memory storage |
| CN105161566B (zh) * | 2015-07-02 | 2017-11-21 | 哈尔滨工程大学 | 一种半浮栅晶体管γ射线剂量探测器及探测方法 |
| US10845706B2 (en) | 2017-04-12 | 2020-11-24 | Asml Netherlands B.V. | Mirror array |
| DE102017125006B3 (de) | 2017-10-25 | 2019-03-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Dosimetrie |
| US10782420B2 (en) | 2017-12-18 | 2020-09-22 | Thermo Eberline Llc | Range-extended dosimeter |
| KR101935880B1 (ko) * | 2018-04-27 | 2019-01-07 | (주)아이스퀘어 | 이온화 챔버 방식의 방사능 측정 장치 |
| US20200245957A1 (en) * | 2019-01-31 | 2020-08-06 | Yonglin Biotech Corp. | Radiation measurement penal, device and system |
| US11353597B2 (en) | 2020-04-29 | 2022-06-07 | Tower Semiconductor Ltd. | High resolution radiation sensor based on single polysilicon floating gate array |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3896309A (en) * | 1973-05-21 | 1975-07-22 | Westinghouse Electric Corp | Radiation detecting device |
| DE3413829A1 (de) * | 1984-04-10 | 1985-10-17 | Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin | Mos-dosimeter |
| US4605946A (en) * | 1984-08-16 | 1986-08-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Fet charge sensor and voltage probe |
| CA1258922A (en) * | 1985-07-24 | 1989-08-29 | Philip C. East | Solid state dosimeter |
| US4757201A (en) * | 1986-06-17 | 1988-07-12 | Westinghouse Electric Corp. | Dosimeter for monitoring food irradiation |
| US4769547A (en) * | 1987-01-27 | 1988-09-06 | Medrad, Inc. | Personal dosimeter having a volume of gas atop an integrated circuit |
| US5117113A (en) * | 1990-07-06 | 1992-05-26 | Thompson And Nielson Electronics Ltd. | Direct reading dosimeter |
| US5332903A (en) * | 1991-03-19 | 1994-07-26 | California Institute Of Technology | p-MOSFET total dose dosimeter |
-
1993
- 1993-10-28 FI FI934784A patent/FI934784A0/fi not_active Application Discontinuation
-
1994
- 1994-10-28 CN CN94194317A patent/CN1040363C/zh not_active Expired - Lifetime
- 1994-10-28 EP EP94931057A patent/EP0760957B1/en not_active Expired - Lifetime
- 1994-10-28 US US08/637,739 patent/US5739541A/en not_active Expired - Lifetime
- 1994-10-28 WO PCT/FI1994/000487 patent/WO1995012134A1/en active IP Right Grant
- 1994-10-28 RU RU96110207A patent/RU2138065C1/ru active
- 1994-10-28 AU AU79957/94A patent/AU7995794A/en not_active Abandoned
- 1994-10-28 DE DE69417770T patent/DE69417770T2/de not_active Expired - Lifetime
- 1994-10-28 DK DK94931057T patent/DK0760957T3/da active
- 1994-10-28 CA CA002175224A patent/CA2175224C/en not_active Expired - Lifetime
- 1994-10-28 AT AT94931057T patent/ATE178719T1/de active
- 1994-10-28 ES ES94931057T patent/ES2132433T3/es not_active Expired - Lifetime
- 1994-10-28 JP JP07512434A patent/JP3142295B2/ja not_active Expired - Lifetime
-
1996
- 1996-04-26 FI FI961789A patent/FI110144B/fi not_active IP Right Cessation
-
1999
- 1999-07-06 GR GR990401778T patent/GR3030696T3/el unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CA2175224A1 (en) | 1995-05-04 |
| FI110144B (fi) | 2002-11-29 |
| JPH09507568A (ja) | 1997-07-29 |
| EP0760957B1 (en) | 1999-04-07 |
| US5739541A (en) | 1998-04-14 |
| CA2175224C (en) | 2000-05-23 |
| FI961789A (fi) | 1996-04-26 |
| JP3142295B2 (ja) | 2001-03-07 |
| EP0760957A1 (en) | 1997-03-12 |
| CN1040363C (zh) | 1998-10-21 |
| GR3030696T3 (en) | 1999-11-30 |
| ATE178719T1 (de) | 1999-04-15 |
| DE69417770T2 (de) | 1999-12-02 |
| DE69417770D1 (de) | 1999-05-12 |
| CN1138901A (zh) | 1996-12-25 |
| RU2138065C1 (ru) | 1999-09-20 |
| ES2132433T3 (es) | 1999-08-16 |
| AU7995794A (en) | 1995-05-22 |
| FI934784A0 (fi) | 1993-10-28 |
| WO1995012134A1 (en) | 1995-05-04 |
| FI961789A0 (fi) | 1996-04-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69417770D1 (de) | Strahlungsdetektor | |
| DE69021177D1 (de) | Halbleiteranordnung mit isolierter Gateelektrode. | |
| EP0215546A3 (en) | Chemical-sensitive semiconductor device | |
| JPS5642377A (en) | Ultraviolet ray erasable type rewritable read-only memory | |
| KR910003816A (ko) | 반도체기억장치의 셀구조 | |
| JPS5279679A (en) | Semiconductor memory device | |
| FR2505102B1 (fr) | Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree | |
| SE7507147L (sv) | Felteffekttransistordon. | |
| JPS5688363A (en) | Field effect transistor | |
| ES2076468T3 (es) | Dispositivo semiconductor que tiene un transistor mejorado con puerta aislada. | |
| IT1230901B (it) | Cella per transistor a effetto di campo a gate isolato a doppia diffusione (d mosfet). | |
| KR900019244A (ko) | 반도체기억장치 | |
| JPS5263684A (en) | Non-volatile semiconductor memory device | |
| JPS5215274A (en) | Semiconductor device | |
| KR930018757A (ko) | 화합물 반도체장치 | |
| JPS5366179A (en) | Semiconductor device | |
| JPS5212583A (en) | Field effect transistor | |
| JPS5772386A (en) | Junction type field-effect semiconductor device | |
| JPS5263074A (en) | Insulated gate type field effect transistor and its production | |
| GB2011710A (en) | Semiconductor structures | |
| JPS5270884A (en) | Moisture sensitive element | |
| JPS5372577A (en) | High dielectric strength field effect transistor | |
| JPS6461060A (en) | Semiconductor device | |
| JPS5333587A (en) | Insulated gate type field effect transistor | |
| JPS56100473A (en) | Semiconductor device |