JPS5333587A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS5333587A
JPS5333587A JP10779676A JP10779676A JPS5333587A JP S5333587 A JPS5333587 A JP S5333587A JP 10779676 A JP10779676 A JP 10779676A JP 10779676 A JP10779676 A JP 10779676A JP S5333587 A JPS5333587 A JP S5333587A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
insulated gate
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10779676A
Other languages
Japanese (ja)
Inventor
Isao Yoshida
Kiichiro Mukai
Shigeru Takahashi
Takeaki Okabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10779676A priority Critical patent/JPS5333587A/en
Publication of JPS5333587A publication Critical patent/JPS5333587A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To escape the moisture contained in resin to the outside and obtain MOSFETs of high reliability by providing void regions in a part of the drain electrodes of polyimide resin, PIQ resin insulating and isolating between drain and source.
COPYRIGHT: (C)1978,JPO&Japio
JP10779676A 1976-09-10 1976-09-10 Insulated gate type field effect transistor Pending JPS5333587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10779676A JPS5333587A (en) 1976-09-10 1976-09-10 Insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10779676A JPS5333587A (en) 1976-09-10 1976-09-10 Insulated gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5333587A true JPS5333587A (en) 1978-03-29

Family

ID=14468240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10779676A Pending JPS5333587A (en) 1976-09-10 1976-09-10 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5333587A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141245A (en) * 1983-01-27 1984-08-13 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Semiconductor logic integrated circuit
US5514911A (en) * 1992-11-24 1996-05-07 Hyundai Electronics Industries Co., Ltd. Highly integrated semiconductor device contact structure
WO2003025995A1 (en) * 2001-09-11 2003-03-27 Sharp Kabushiki Kaisha Semiconductor device and high-frequency amplifier comprising it

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141245A (en) * 1983-01-27 1984-08-13 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Semiconductor logic integrated circuit
US5514911A (en) * 1992-11-24 1996-05-07 Hyundai Electronics Industries Co., Ltd. Highly integrated semiconductor device contact structure
WO2003025995A1 (en) * 2001-09-11 2003-03-27 Sharp Kabushiki Kaisha Semiconductor device and high-frequency amplifier comprising it

Similar Documents

Publication Publication Date Title
JPS5230388A (en) Semiconductor integrated circuit device constructed with insulating ga te field effect transistor
JPS54125986A (en) Semiconductor including insulated gate type transistor
JPS5222480A (en) Insulating gate field effect transistor
JPS5223277A (en) Method of manufacteuring insulating gate type field effect transistor
JPS5333587A (en) Insulated gate type field effect transistor
JPS5382179A (en) Field effect transistor
JPS5248475A (en) Semiconductor device
JPS5291661A (en) Semiconductor integrated circuit
JPS5263074A (en) Insulated gate type field effect transistor and its production
JPS5366179A (en) Semiconductor device
JPS5425678A (en) Field effect transistor of ultra high frequency and high output
JPS52149481A (en) Semiconductor integrated circuit device and its production
JPS5371573A (en) Field effect transistor of isolating gate type
JPS5372577A (en) High dielectric strength field effect transistor
JPS5358780A (en) Field effect type transistor
JPS52100877A (en) Field effect transistor of junction type
JPS5424583A (en) Mos field effect transistor
JPS52141581A (en) Mos type semiconductor device 7 its manufacture
JPS52127078A (en) Semiconductor device
JPS5418687A (en) Insulating gate field effect transistor
JPS5339088A (en) Insulated gate type field effect semiconductor device
JPS52127079A (en) Device and production of mos type semiconductor
JPS5527681A (en) Field effect transistor
JPS548986A (en) Semiconductor device
JPS52136583A (en) Mos type semiconductor device