FI953240A0 - Ljusdetektor - Google Patents

Ljusdetektor

Info

Publication number
FI953240A0
FI953240A0 FI953240A FI953240A FI953240A0 FI 953240 A0 FI953240 A0 FI 953240A0 FI 953240 A FI953240 A FI 953240A FI 953240 A FI953240 A FI 953240A FI 953240 A0 FI953240 A0 FI 953240A0
Authority
FI
Finland
Prior art keywords
pct
photoelectrons
date
sec
floating gate
Prior art date
Application number
FI953240A
Other languages
English (en)
Inventor
Jukka Kahilainen
Timo Oikari
Jukka Haaslahti
Original Assignee
Rados Technology Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rados Technology Oy filed Critical Rados Technology Oy
Priority to FI953240A priority Critical patent/FI953240A0/fi
Publication of FI953240A0 publication Critical patent/FI953240A0/fi
Priority to AU62271/96A priority patent/AU6227196A/en
Priority to JP50485197A priority patent/JP3790548B2/ja
Priority to EP96920861A priority patent/EP0842545B1/en
Priority to US08/981,724 priority patent/US6043508A/en
Priority to PCT/FI1996/000380 priority patent/WO1997002609A1/en
Priority to RU98101464/28A priority patent/RU2161348C2/ru
Priority to CA002225226A priority patent/CA2225226C/en
Priority to CN96195181A priority patent/CN1112735C/zh
Priority to DE69633183T priority patent/DE69633183T2/de
Priority to AT96920861T priority patent/ATE274241T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
FI953240A 1995-06-30 1995-06-30 Ljusdetektor FI953240A0 (fi)

Priority Applications (11)

Application Number Priority Date Filing Date Title
FI953240A FI953240A0 (fi) 1995-06-30 1995-06-30 Ljusdetektor
AT96920861T ATE274241T1 (de) 1995-06-30 1996-06-28 Fotodetektor mit einem mosfet bestehend aus einem schwebenden gate
US08/981,724 US6043508A (en) 1995-06-30 1996-06-28 Photodetector involving a MOSFET having a floating gate
JP50485197A JP3790548B2 (ja) 1995-06-30 1996-06-28 フローティング・ゲートが有るｍｏｓｆｅｔを含む受光素子
EP96920861A EP0842545B1 (en) 1995-06-30 1996-06-28 Photodetector involving a mosfet having a floating gate
AU62271/96A AU6227196A (en) 1995-06-30 1996-06-28 Photodetector involving a mosfet having a floating gate
PCT/FI1996/000380 WO1997002609A1 (en) 1995-06-30 1996-06-28 Photodetector involving a mosfet having a floating gate
RU98101464/28A RU2161348C2 (ru) 1995-06-30 1996-06-28 Фотодетектор, содержащий моппт с плавающим затвором
CA002225226A CA2225226C (en) 1995-06-30 1996-06-28 Photodetector involving a mosfet having a floating gate
CN96195181A CN1112735C (zh) 1995-06-30 1996-06-28 包含浮栅mosfet的光探测器
DE69633183T DE69633183T2 (de) 1995-06-30 1996-06-28 Fotodetektor mit einem mosfet bestehend aus einem schwebenden gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI953240A FI953240A0 (fi) 1995-06-30 1995-06-30 Ljusdetektor

Publications (1)

Publication Number Publication Date
FI953240A0 true FI953240A0 (fi) 1995-06-30

Family

ID=8543704

Family Applications (1)

Application Number Title Priority Date Filing Date
FI953240A FI953240A0 (fi) 1995-06-30 1995-06-30 Ljusdetektor

Country Status (11)

Country Link
US (1) US6043508A (fi)
EP (1) EP0842545B1 (fi)
JP (1) JP3790548B2 (fi)
CN (1) CN1112735C (fi)
AT (1) ATE274241T1 (fi)
AU (1) AU6227196A (fi)
CA (1) CA2225226C (fi)
DE (1) DE69633183T2 (fi)
FI (1) FI953240A0 (fi)
RU (1) RU2161348C2 (fi)
WO (1) WO1997002609A1 (fi)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000088645A (ja) 1998-09-16 2000-03-31 Hamamatsu Photonics Kk 積分型光検出装置
CN100554897C (zh) * 2002-04-17 2009-10-28 浜松光子学株式会社 光检测传感器
KR100499956B1 (ko) * 2002-10-24 2005-07-05 전자부품연구원 양자채널이 형성된 모스펫을 이용한 포토디텍터 및 그제조방법
FR2911191B1 (fr) * 2007-01-09 2009-07-10 Microcomposants De Haute Secur Capteur de mesure d'une dose d'uv et procede de mesure d'une dose d'uv mettant en oeuvre ce capteur
CN101303239B (zh) * 2007-05-10 2010-05-26 北方工业大学 一种传感器及其调节方法
US8068190B2 (en) * 2008-09-02 2011-11-29 Sharp Kabushiki Kaisha Display device
CN101807547B (zh) * 2009-02-18 2013-07-10 南京大学 光敏复合介质栅mosfet探测器
US9219177B2 (en) 2010-04-07 2015-12-22 International Business Machines Corporation Photo detector and integrated circuit
KR101774480B1 (ko) * 2011-08-16 2017-09-04 에레즈 할라미 전계 효과 트랜지스터의 비접촉 제어를 위한 방법 및 장치 그리고 두 개의 전자 장치들을 상호연결하는 방법
US8653618B2 (en) * 2011-09-02 2014-02-18 Hoon Kim Unit pixel of color image sensor and photo detector thereof
WO2014197102A2 (en) 2013-03-15 2014-12-11 Starfire Industries Llc Neutron radiation sensor
CN104900745B (zh) * 2015-05-26 2017-10-27 北京工业大学 一种基于高电子迁移率晶体管的光谱探测器及其制备方法
CN110767519B (zh) * 2019-10-21 2022-03-04 中国电子科技集团公司第十二研究所 一种场发射电子源结构及其形成方法、电子源、微波管

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002420A1 (fr) * 1977-12-01 1979-06-13 International Business Machines Corporation Dispositif semi-conducteur du type transistor à effet de champ activé par la lumière et mémoire en résultant
DE3413829A1 (de) * 1984-04-10 1985-10-17 Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin Mos-dosimeter
US5471051A (en) * 1993-06-02 1995-11-28 Hamamatsu Photonics K.K. Photocathode capable of detecting position of incident light in one or two dimensions, phototube, and photodetecting apparatus containing same
FI934784A0 (fi) * 1993-10-28 1993-10-28 Rados Technology Oy Straolningsdetektor
US5804833A (en) * 1996-10-10 1998-09-08 Advanced Scientific Concepts, Inc. Advanced semiconductor emitter technology photocathodes

Also Published As

Publication number Publication date
RU2161348C2 (ru) 2000-12-27
WO1997002609A1 (en) 1997-01-23
CN1112735C (zh) 2003-06-25
ATE274241T1 (de) 2004-09-15
US6043508A (en) 2000-03-28
EP0842545A1 (en) 1998-05-20
DE69633183T2 (de) 2005-08-18
JP3790548B2 (ja) 2006-06-28
AU6227196A (en) 1997-02-05
EP0842545B1 (en) 2004-08-18
JPH11509366A (ja) 1999-08-17
CA2225226C (en) 2003-01-21
CN1189922A (zh) 1998-08-05
CA2225226A1 (en) 1997-01-23
DE69633183D1 (de) 2004-09-23

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Legal Events

Date Code Title Description
FD Application lapsed