DE69112713T2 - Halbleiteranordnung mit verbessertem Transistor vom isolierten Gatetyp. - Google Patents

Halbleiteranordnung mit verbessertem Transistor vom isolierten Gatetyp.

Info

Publication number
DE69112713T2
DE69112713T2 DE69112713T DE69112713T DE69112713T2 DE 69112713 T2 DE69112713 T2 DE 69112713T2 DE 69112713 T DE69112713 T DE 69112713T DE 69112713 T DE69112713 T DE 69112713T DE 69112713 T2 DE69112713 T2 DE 69112713T2
Authority
DE
Germany
Prior art keywords
semiconductor device
type transistor
insulated gate
gate type
improved insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69112713T
Other languages
English (en)
Other versions
DE69112713D1 (de
Inventor
Shigeyuki Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69112713D1 publication Critical patent/DE69112713D1/de
Publication of DE69112713T2 publication Critical patent/DE69112713T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69112713T 1990-06-04 1991-06-04 Halbleiteranordnung mit verbessertem Transistor vom isolierten Gatetyp. Expired - Fee Related DE69112713T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2144544A JP2790362B2 (ja) 1990-06-04 1990-06-04 半導体装置

Publications (2)

Publication Number Publication Date
DE69112713D1 DE69112713D1 (de) 1995-10-12
DE69112713T2 true DE69112713T2 (de) 1996-02-22

Family

ID=15364769

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69112713T Expired - Fee Related DE69112713T2 (de) 1990-06-04 1991-06-04 Halbleiteranordnung mit verbessertem Transistor vom isolierten Gatetyp.

Country Status (9)

Country Link
US (1) US5302846A (de)
EP (1) EP0460918B1 (de)
JP (1) JP2790362B2 (de)
KR (1) KR950006482B1 (de)
CN (1) CN1032173C (de)
AT (1) ATE127618T1 (de)
DE (1) DE69112713T2 (de)
ES (1) ES2076468T3 (de)
MY (1) MY107193A (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512517A (en) * 1995-04-25 1996-04-30 International Business Machines Corporation Self-aligned gate sidewall spacer in a corrugated FET and method of making same
US5879971A (en) * 1995-09-28 1999-03-09 Motorola Inc. Trench random access memory cell and method of formation
US5705409A (en) * 1995-09-28 1998-01-06 Motorola Inc. Method for forming trench transistor structure
US5929476A (en) 1996-06-21 1999-07-27 Prall; Kirk Semiconductor-on-insulator transistor and memory circuitry employing semiconductor-on-insulator transistors
US5838176A (en) * 1996-07-11 1998-11-17 Foveonics, Inc. Correlated double sampling circuit
DE19720193C2 (de) * 1997-05-14 2002-10-17 Infineon Technologies Ag Integrierte Schaltungsanordnung mit mindestens zwei vertikalen MOS-Transistoren und Verfahren zu deren Herstellung
US5886382A (en) * 1997-07-18 1999-03-23 Motorola, Inc. Trench transistor structure comprising at least two vertical transistors
US6500744B2 (en) 1999-09-02 2002-12-31 Micron Technology, Inc. Methods of forming DRAM assemblies, transistor devices, and openings in substrates
EP2267439B8 (de) 1999-11-15 2015-05-27 Panasonic Healthcare Holdings Co., Ltd. Biosensor zur Quantifizierung eines Substrats
US7745289B2 (en) * 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US9590065B2 (en) 2013-12-04 2017-03-07 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device with metal gate structure comprising work-function metal layer and work-fuction adjustment layer

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423478A (en) * 1977-07-25 1979-02-22 Toshiba Corp Semiconductor device of field effect type
JPS57192080A (en) * 1981-05-21 1982-11-26 Fujitsu Ltd Semiconductor device
JPS59129472A (ja) * 1983-01-14 1984-07-25 Sanyo Electric Co Ltd Ｍｏｓ型トランジスタ
JPS59228762A (ja) * 1983-06-10 1984-12-22 Hitachi Ltd マルチゲ−トトランジスタ
US4786953A (en) * 1984-07-16 1988-11-22 Nippon Telegraph & Telephone Vertical MOSFET and method of manufacturing the same
US4835585A (en) * 1984-11-26 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench gate structures
JPH0626251B2 (ja) * 1984-11-27 1994-04-06 アメリカン テレフオン アンド テレグラフ カムパニ− 溝トランジスタ
JPS62136877A (ja) * 1985-12-11 1987-06-19 Toshiba Corp 絶縁ゲ−ト型電界効果トランジスタ
GB2195663B (en) * 1986-08-15 1990-08-22 Nippon Telegraph & Telephone Chemical vapour deposition method and apparatus therefor
US4835584A (en) * 1986-11-27 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench transistor
US4910564A (en) * 1987-07-01 1990-03-20 Mitsubishi Denki Kabushiki Kaisha Highly integrated field effect transistor and method for manufacturing the same
JPS6421968A (en) * 1987-07-17 1989-01-25 Oki Electric Ind Co Ltd Vertical type mosfet device and manufacture thereof
JPH01183855A (ja) * 1988-01-18 1989-07-21 Mitsubishi Electric Corp Ｍｏｓ形トランジスタ
JPH0214578A (ja) * 1988-07-01 1990-01-18 Fujitsu Ltd 半導体装置
US5047812A (en) * 1989-02-27 1991-09-10 Motorola, Inc. Insulated gate field effect device
US4964080A (en) * 1990-03-09 1990-10-16 Intel Corporation Three-dimensional memory cell with integral select transistor

Also Published As

Publication number Publication date
KR950006482B1 (ko) 1995-06-15
ATE127618T1 (de) 1995-09-15
KR920001749A (ko) 1992-01-30
EP0460918A3 (en) 1992-05-06
JPH0438877A (ja) 1992-02-10
US5302846A (en) 1994-04-12
EP0460918A2 (de) 1991-12-11
MY107193A (en) 1995-09-30
DE69112713D1 (de) 1995-10-12
EP0460918B1 (de) 1995-09-06
ES2076468T3 (es) 1995-11-01
CN1032173C (zh) 1996-06-26
JP2790362B2 (ja) 1998-08-27
CN1057131A (zh) 1991-12-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee