ATE135496T1 - Dünnschicht-halbleiterbauelement - Google Patents

Dünnschicht-halbleiterbauelement

Info

Publication number
ATE135496T1
ATE135496T1 AT91302658T AT91302658T ATE135496T1 AT E135496 T1 ATE135496 T1 AT E135496T1 AT 91302658 T AT91302658 T AT 91302658T AT 91302658 T AT91302658 T AT 91302658T AT E135496 T1 ATE135496 T1 AT E135496T1
Authority
AT
Austria
Prior art keywords
thin film
film semiconductor
semiconductor component
layer
protective layer
Prior art date
Application number
AT91302658T
Other languages
English (en)
Inventor
Masato C O Canon Kabu Yamanobe
Takayuki C O Canon Kabus Ishii
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2078404A external-priority patent/JPH03278467A/ja
Priority claimed from JP2078403A external-priority patent/JPH03278437A/ja
Priority claimed from JP2078406A external-priority patent/JPH03278477A/ja
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE135496T1 publication Critical patent/ATE135496T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
AT91302658T 1990-03-27 1991-03-26 Dünnschicht-halbleiterbauelement ATE135496T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2078404A JPH03278467A (ja) 1990-03-27 1990-03-27 薄膜半導体装置
JP2078403A JPH03278437A (ja) 1990-03-27 1990-03-27 薄膜半導体装置及びその製造方法
JP2078406A JPH03278477A (ja) 1990-03-27 1990-03-27 薄膜半導体装置及びこの薄膜半導体装置を用いた光電変換装置

Publications (1)

Publication Number Publication Date
ATE135496T1 true ATE135496T1 (de) 1996-03-15

Family

ID=27302704

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91302658T ATE135496T1 (de) 1990-03-27 1991-03-26 Dünnschicht-halbleiterbauelement

Country Status (4)

Country Link
US (2) US5576555A (de)
EP (1) EP0449598B1 (de)
AT (1) ATE135496T1 (de)
DE (1) DE69117785T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5796116A (en) * 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
KR0145900B1 (ko) * 1995-02-11 1998-09-15 김광호 박막 트랜지스터 액정디스플레이 소자 및 그 제조방법
JPH09270519A (ja) * 1996-03-31 1997-10-14 Furontetsuku:Kk 薄膜トランジスタの製造方法
US6010923A (en) * 1997-03-31 2000-01-04 Sanyo Electric Co., Ltd. Manufacturing method of semiconductor device utilizing annealed semiconductor layer as channel region
US5834356A (en) * 1997-06-27 1998-11-10 Vlsi Technology, Inc. Method of making high resistive structures in salicided process semiconductor devices
TW400554B (en) * 1997-07-25 2000-08-01 United Microelectronics Corp The removing method for the thin film layer involved in the semiconductor device
US6166417A (en) 1998-06-30 2000-12-26 Intel Corporation Complementary metal gates and a process for implementation
US6130123A (en) * 1998-06-30 2000-10-10 Intel Corporation Method for making a complementary metal gate electrode technology
KR20010075560A (ko) * 1999-08-02 2001-08-09 가시오 가즈오 광감지기 및 광감지기 시스템
KR100776514B1 (ko) * 2000-12-30 2007-11-16 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법
JP3990167B2 (ja) * 2002-03-04 2007-10-10 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置の駆動方法およびその駆動方法を用いた液晶表示装置
JP4378137B2 (ja) * 2003-09-04 2009-12-02 キヤノン株式会社 読み出し回路、固体撮像装置、及びこれを用いたカメラシステム
JP5157161B2 (ja) 2006-12-27 2013-03-06 カシオ計算機株式会社 フォトセンサ
US7863112B2 (en) * 2008-01-08 2011-01-04 International Business Machines Corporation Method and structure to protect FETs from plasma damage during FEOL processing
JP5615605B2 (ja) * 2010-07-05 2014-10-29 三菱電機株式会社 Ｆｆｓモード液晶装置
US8679905B2 (en) * 2011-06-08 2014-03-25 Cbrite Inc. Metal oxide TFT with improved source/drain contacts
US9035932B2 (en) * 2012-08-31 2015-05-19 Apple Inc. Thermally compensated pixels for liquid crystal displays (LCDS)
US9201112B2 (en) 2013-12-09 2015-12-01 International Business Machines Corporation Atom probe tomography sample preparation for three-dimensional (3D) semiconductor devices

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961964A (ja) * 1982-10-01 1984-04-09 Fujitsu Ltd 薄膜トランジスタの製造方法
JPS60101940A (ja) * 1983-11-07 1985-06-06 Ricoh Co Ltd イメ−ジセンサ
JPH0682839B2 (ja) * 1984-08-21 1994-10-19 セイコー電子工業株式会社 表示用パネルの製造方法
US4882295A (en) * 1985-07-26 1989-11-21 Energy Conversion Devices, Inc. Method of making a double injection field effect transistor
JPS639157A (ja) * 1986-06-30 1988-01-14 Canon Inc 薄膜トランジスタの製造方法
US5306648A (en) * 1986-01-24 1994-04-26 Canon Kabushiki Kaisha Method of making photoelectric conversion device
US4843265A (en) * 1986-02-10 1989-06-27 Dallas Semiconductor Corporation Temperature compensated monolithic delay circuit
JPS62253785A (ja) * 1986-04-28 1987-11-05 Tokyo Univ 間欠的エツチング方法
US5308996A (en) * 1986-09-25 1994-05-03 Canon Kabushiki Kaisha TFT device
JP2702131B2 (ja) * 1987-06-12 1998-01-21 キヤノン株式会社 画像読取装置及び該装置を有する画像情報読取装置
JPH01137674A (ja) * 1987-11-25 1989-05-30 Matsushita Electric Ind Co Ltd 薄膜トランジスタ
JPH01302769A (ja) * 1988-05-30 1989-12-06 Seikosha Co Ltd 逆スタガー型シリコン薄膜トランジスタの製造方法
GB2220792B (en) * 1988-07-13 1991-12-18 Seikosha Kk Silicon thin film transistor and method for producing the same
JPH0816756B2 (ja) * 1988-08-10 1996-02-21 シャープ株式会社 透過型アクティブマトリクス液晶表示装置
US5202572A (en) * 1988-09-21 1993-04-13 Fuji Xerox Co., Ltd. Thin film transistor
US4874459A (en) * 1988-10-17 1989-10-17 The Regents Of The University Of California Low damage-producing, anisotropic, chemically enhanced etching method and apparatus
EP0372821B1 (de) * 1988-11-30 1995-03-08 Nec Corporation Flüssigkristallanzeigetafel mit verminderten Pixeldefekten
ATE143175T1 (de) * 1990-03-27 1996-10-15 Canon Kk Dünnschicht-halbleiterbauelement
US5198694A (en) * 1990-10-05 1993-03-30 General Electric Company Thin film transistor structure with improved source/drain contacts

Also Published As

Publication number Publication date
DE69117785D1 (de) 1996-04-18
EP0449598A2 (de) 1991-10-02
EP0449598B1 (de) 1996-03-13
US5576555A (en) 1996-11-19
DE69117785T2 (de) 1997-02-06
EP0449598A3 (en) 1992-01-08
US5705411A (en) 1998-01-06

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Legal Events

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