EP0335632A3 - Hochstrom-Dünnfilmtransistor - Google Patents

Hochstrom-Dünnfilmtransistor Download PDF

Info

Publication number
EP0335632A3
EP0335632A3 EP19890303000 EP89303000A EP0335632A3 EP 0335632 A3 EP0335632 A3 EP 0335632A3 EP 19890303000 EP19890303000 EP 19890303000 EP 89303000 A EP89303000 A EP 89303000A EP 0335632 A3 EP0335632 A3 EP 0335632A3
Authority
EP
European Patent Office
Prior art keywords
layer
thin film
film transistor
gate dielectric
high current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19890303000
Other languages
English (en)
French (fr)
Other versions
EP0335632A2 (de
EP0335632B1 (de
Inventor
Michael Hack
John Gary Shaw
Michael Shur
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of EP0335632A2 publication Critical patent/EP0335632A2/de
Publication of EP0335632A3 publication Critical patent/EP0335632A3/de
Application granted granted Critical
Publication of EP0335632B1 publication Critical patent/EP0335632B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
EP89303000A 1988-03-29 1989-03-28 Hochstrom-Dünnfilmtransistor Expired - Lifetime EP0335632B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US174652 1988-03-29
US07/174,652 US4990977A (en) 1988-03-29 1988-03-29 High current thin film transistor

Publications (3)

Publication Number Publication Date
EP0335632A2 EP0335632A2 (de) 1989-10-04
EP0335632A3 true EP0335632A3 (de) 1991-01-16
EP0335632B1 EP0335632B1 (de) 1993-03-10

Family

ID=22636976

Family Applications (1)

Application Number Title Priority Date Filing Date
EP89303000A Expired - Lifetime EP0335632B1 (de) 1988-03-29 1989-03-28 Hochstrom-Dünnfilmtransistor

Country Status (4)

Country Link
US (1) US4990977A (de)
EP (1) EP0335632B1 (de)
JP (1) JP2507031B2 (de)
DE (1) DE68905210T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4996573A (en) * 1989-10-27 1991-02-26 Xerox Corporation Vertical thin film transistor and optical sensor having leakage current suppression elements
JPH03252164A (ja) * 1990-02-28 1991-11-11 Sanyo Electric Co Ltd 薄膜トランジスタ
US7662698B2 (en) * 2006-11-07 2010-02-16 Raytheon Company Transistor having field plate
US7995081B2 (en) 2008-06-25 2011-08-09 Palo Alto Research Center Incorporated Anisotropically conductive backside addressable imaging belt for use with contact electrography
US9230985B1 (en) 2014-10-15 2016-01-05 Sandisk 3D Llc Vertical TFT with tunnel barrier
EP3664171B1 (de) * 2018-12-06 2021-05-12 Flexterra, Inc. Dünnschichttransistor mit organischen halbleitermaterialien

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH455055A (de) * 1967-03-15 1968-04-30 Ibm Halbleiteranordnung, bestehend aus einem Substrat, einer Öffnungen enthaltenden Maske und einer durch die Öffnungen mit dem Substrat verbundenen einkristallinen Halbleiterschicht
FR2344967A1 (fr) * 1976-03-17 1977-10-14 Siemens Ag Transistor a effet de champ a canal de longueur tres courte

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58132973A (ja) * 1982-02-01 1983-08-08 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型電界効果半導体装置およびその作製方法
JPS6193669A (ja) * 1984-10-15 1986-05-12 Nec Corp 半導体素子
US4803533A (en) * 1986-09-30 1989-02-07 General Electric Company IGT and MOSFET devices having reduced channel width
US4866495A (en) * 1987-05-27 1989-09-12 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
US4746960A (en) * 1987-07-27 1988-05-24 General Motors Corporation Vertical depletion-mode j-MOSFET

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH455055A (de) * 1967-03-15 1968-04-30 Ibm Halbleiteranordnung, bestehend aus einem Substrat, einer Öffnungen enthaltenden Maske und einer durch die Öffnungen mit dem Substrat verbundenen einkristallinen Halbleiterschicht
FR2344967A1 (fr) * 1976-03-17 1977-10-14 Siemens Ag Transistor a effet de champ a canal de longueur tres courte

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN. vol. 29, no. 1, June 1986, NEW YORK US pages 343 - 344; "SHORT CHANNEL FET FABRICATION" *
PATENT ABSTRACTS OF JAPAN vol. 10, no. 272 (E-437)(2328) 16 September 1986, & JP-A-61 93669 (NEC CORP) 12 May 1986, *
PATENT ABSTRACTS OF JAPAN vol. 7, no. 243 (E-207)(1388) 28 October 1983, & JP-A-58 132973 (HANDOUTAI ENERRUGII KENKYUSHO K.K.) 08 August 1983, *

Also Published As

Publication number Publication date
JP2507031B2 (ja) 1996-06-12
EP0335632A2 (de) 1989-10-04
DE68905210D1 (de) 1993-04-15
EP0335632B1 (de) 1993-03-10
DE68905210T2 (de) 1993-07-22
JPH0210873A (ja) 1990-01-16
US4990977A (en) 1991-02-05

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