DE68905210D1 - Hochstrom-duennfilmtransistor. - Google Patents

Hochstrom-duennfilmtransistor.

Info

Publication number
DE68905210D1
DE68905210D1 DE8989303000T DE68905210T DE68905210D1 DE 68905210 D1 DE68905210 D1 DE 68905210D1 DE 8989303000 T DE8989303000 T DE 8989303000T DE 68905210 T DE68905210 T DE 68905210T DE 68905210 D1 DE68905210 D1 DE 68905210D1
Authority
DE
Germany
Prior art keywords
thin film
film transistor
high current
current thin
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8989303000T
Other languages
English (en)
Other versions
DE68905210T2 (de
Inventor
Michael Hack
John Gary Shaw
Michael Shur
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE68905210D1 publication Critical patent/DE68905210D1/de
Publication of DE68905210T2 publication Critical patent/DE68905210T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
DE8989303000T 1988-03-29 1989-03-28 Hochstrom-duennfilmtransistor. Expired - Fee Related DE68905210T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/174,652 US4990977A (en) 1988-03-29 1988-03-29 High current thin film transistor

Publications (2)

Publication Number Publication Date
DE68905210D1 true DE68905210D1 (de) 1993-04-15
DE68905210T2 DE68905210T2 (de) 1993-07-22

Family

ID=22636976

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8989303000T Expired - Fee Related DE68905210T2 (de) 1988-03-29 1989-03-28 Hochstrom-duennfilmtransistor.

Country Status (4)

Country Link
US (1) US4990977A (de)
EP (1) EP0335632B1 (de)
JP (1) JP2507031B2 (de)
DE (1) DE68905210T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4996573A (en) * 1989-10-27 1991-02-26 Xerox Corporation Vertical thin film transistor and optical sensor having leakage current suppression elements
JPH03252164A (ja) * 1990-02-28 1991-11-11 Sanyo Electric Co Ltd 薄膜トランジスタ
US7662698B2 (en) * 2006-11-07 2010-02-16 Raytheon Company Transistor having field plate
US7995081B2 (en) 2008-06-25 2011-08-09 Palo Alto Research Center Incorporated Anisotropically conductive backside addressable imaging belt for use with contact electrography
US9230985B1 (en) 2014-10-15 2016-01-05 Sandisk 3D Llc Vertical TFT with tunnel barrier
EP3664171B1 (de) * 2018-12-06 2021-05-12 Flexterra, Inc. Dünnschichttransistor mit organischen halbleitermaterialien

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH455055A (de) * 1967-03-15 1968-04-30 Ibm Halbleiteranordnung, bestehend aus einem Substrat, einer Öffnungen enthaltenden Maske und einer durch die Öffnungen mit dem Substrat verbundenen einkristallinen Halbleiterschicht
DE2611338C3 (de) * 1976-03-17 1979-03-29 Siemens Ag, 1000 Berlin Und 8000 Muenchen Feldeffekttransistor mit sehr kurzer Kanallange
JPS58132973A (ja) * 1982-02-01 1983-08-08 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型電界効果半導体装置およびその作製方法
JPS6193669A (ja) * 1984-10-15 1986-05-12 Nec Corp 半導体素子
US4803533A (en) * 1986-09-30 1989-02-07 General Electric Company IGT and MOSFET devices having reduced channel width
US4866495A (en) * 1987-05-27 1989-09-12 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
US4746960A (en) * 1987-07-27 1988-05-24 General Motors Corporation Vertical depletion-mode j-MOSFET

Also Published As

Publication number Publication date
EP0335632A3 (de) 1991-01-16
EP0335632B1 (de) 1993-03-10
US4990977A (en) 1991-02-05
JPH0210873A (ja) 1990-01-16
DE68905210T2 (de) 1993-07-22
JP2507031B2 (ja) 1996-06-12
EP0335632A2 (de) 1989-10-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee