ATE76222T1 - Duennfilmtransistor. - Google Patents
Duennfilmtransistor.Info
- Publication number
- ATE76222T1 ATE76222T1 AT85116460T AT85116460T ATE76222T1 AT E76222 T1 ATE76222 T1 AT E76222T1 AT 85116460 T AT85116460 T AT 85116460T AT 85116460 T AT85116460 T AT 85116460T AT E76222 T1 ATE76222 T1 AT E76222T1
- Authority
- AT
- Austria
- Prior art keywords
- thin film
- film transistor
- semiconductor layer
- deposited
- amorphous semiconductor
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
- H10D30/875—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having thin-film semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Bipolar Transistors (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Agricultural Chemicals And Associated Chemicals (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59279986A JPS61158185A (ja) | 1984-12-28 | 1984-12-28 | 薄膜トランジスタ |
| EP85116460A EP0187367B1 (de) | 1984-12-28 | 1985-12-23 | Dünnfilmtransistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE76222T1 true ATE76222T1 (de) | 1992-05-15 |
Family
ID=17618708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT85116460T ATE76222T1 (de) | 1984-12-28 | 1985-12-23 | Duennfilmtransistor. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4679062A (de) |
| EP (1) | EP0187367B1 (de) |
| JP (1) | JPS61158185A (de) |
| KR (1) | KR890004964B1 (de) |
| AT (1) | ATE76222T1 (de) |
| DE (1) | DE3586047D1 (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2681148B2 (ja) * | 1986-07-29 | 1997-11-26 | 工業技術院長 | 薄膜接合電界効果素子の製造方法 |
| JPH06101563B2 (ja) * | 1988-07-19 | 1994-12-12 | 工業技術院長 | 薄膜電界効果トランジスタとその製造方法 |
| WO1991011027A1 (en) * | 1990-01-16 | 1991-07-25 | Iowa State University Research Foundation, Inc. | Non-crystalline silicon active device for large-scale digital and analog networks |
| US5140390A (en) * | 1990-02-16 | 1992-08-18 | Hughes Aircraft Company | High speed silicon-on-insulator device |
| US6214705B1 (en) * | 1998-12-15 | 2001-04-10 | United Microelectronics Corp. | Method for fabricating a gate eletrode |
| TWI358594B (en) * | 2007-10-24 | 2012-02-21 | Au Optronics Corp | Pixel structure |
| WO2012091777A2 (en) * | 2010-10-04 | 2012-07-05 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Complementary biasing circuits and related methods |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH572985A5 (de) * | 1971-12-10 | 1976-02-27 | Ibm | |
| JPS5190576A (de) * | 1975-02-07 | 1976-08-09 | ||
| DE3117037C2 (de) * | 1980-05-08 | 1987-05-14 | Takao Sakai Osaka Kawamura | Elektrophotografisches Aufzeichnungsmaterial |
| JPS5772370A (en) * | 1980-10-23 | 1982-05-06 | Canon Inc | Photoelectric converter |
| JPS582073A (ja) * | 1981-06-29 | 1983-01-07 | Sony Corp | 電界効果型トランジスタ |
| JPS587871A (ja) * | 1981-07-07 | 1983-01-17 | Matsushita Electric Ind Co Ltd | ダイオ−ドおよびその製造方法 |
| US4558340A (en) * | 1983-06-29 | 1985-12-10 | Stauffer Chemical Company | Thin film field effect transistors utilizing a polypnictide semiconductor |
-
1984
- 1984-12-28 JP JP59279986A patent/JPS61158185A/ja active Pending
-
1985
- 1985-12-16 US US06/809,677 patent/US4679062A/en not_active Expired - Fee Related
- 1985-12-23 AT AT85116460T patent/ATE76222T1/de not_active IP Right Cessation
- 1985-12-23 DE DE8585116460T patent/DE3586047D1/de not_active Expired - Lifetime
- 1985-12-23 EP EP85116460A patent/EP0187367B1/de not_active Expired - Lifetime
- 1985-12-27 KR KR1019850009843A patent/KR890004964B1/ko not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0187367A2 (de) | 1986-07-16 |
| EP0187367B1 (de) | 1992-05-13 |
| EP0187367A3 (en) | 1987-12-02 |
| DE3586047D1 (en) | 1992-06-17 |
| KR860005454A (ko) | 1986-07-23 |
| KR890004964B1 (ko) | 1989-12-02 |
| JPS61158185A (ja) | 1986-07-17 |
| US4679062A (en) | 1987-07-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |