DE69120574T2 - Ohmscher Kontakt-Dünnschichttransistor - Google Patents

Ohmscher Kontakt-Dünnschichttransistor

Info

Publication number
DE69120574T2
DE69120574T2 DE69120574T DE69120574T DE69120574T2 DE 69120574 T2 DE69120574 T2 DE 69120574T2 DE 69120574 T DE69120574 T DE 69120574T DE 69120574 T DE69120574 T DE 69120574T DE 69120574 T2 DE69120574 T2 DE 69120574T2
Authority
DE
Germany
Prior art keywords
thin film
film transistor
ohmic contact
contact thin
ohmic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69120574T
Other languages
English (en)
Other versions
DE69120574D1 (de
Inventor
Masato Hiramatsu
Takaaki Kamimura
Mitsuo Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2215491A external-priority patent/JPH03278466A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69120574D1 publication Critical patent/DE69120574D1/de
Publication of DE69120574T2 publication Critical patent/DE69120574T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
DE69120574T 1990-03-27 1991-03-25 Ohmscher Kontakt-Dünnschichttransistor Expired - Fee Related DE69120574T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7738590 1990-03-27
JP2215491A JPH03278466A (ja) 1990-03-27 1990-08-15 薄膜トランジスタおよびその製造方法

Publications (2)

Publication Number Publication Date
DE69120574D1 DE69120574D1 (de) 1996-08-08
DE69120574T2 true DE69120574T2 (de) 1996-11-28

Family

ID=26418479

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69120574T Expired - Fee Related DE69120574T2 (de) 1990-03-27 1991-03-25 Ohmscher Kontakt-Dünnschichttransistor

Country Status (2)

Country Link
EP (1) EP0449539B1 (de)
DE (1) DE69120574T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0473988A1 (de) * 1990-08-29 1992-03-11 International Business Machines Corporation Verfahren zur Herstellung eines Dünnfilmtransistors mit amorpher/polykristalliner Halbleiterkanalzone
KR100225098B1 (ko) * 1996-07-02 1999-10-15 구자홍 박막트랜지스터의 제조방법
US7738050B2 (en) 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
TWI464510B (zh) 2007-07-20 2014-12-11 Semiconductor Energy Lab 液晶顯示裝置
JP2009049384A (ja) 2007-07-20 2009-03-05 Semiconductor Energy Lab Co Ltd 発光装置
US8786793B2 (en) 2007-07-27 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP5371341B2 (ja) 2007-09-21 2013-12-18 株式会社半導体エネルギー研究所 電気泳動方式の表示装置
US7968880B2 (en) 2008-03-01 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device
KR101635625B1 (ko) 2008-04-18 2016-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터 및 그 제작 방법
WO2009128522A1 (en) * 2008-04-18 2009-10-22 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same
US8053294B2 (en) 2008-04-21 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film
JP5436017B2 (ja) 2008-04-25 2014-03-05 株式会社半導体エネルギー研究所 半導体装置
WO2009157573A1 (en) 2008-06-27 2009-12-30 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, semiconductor device and electronic device
US8283667B2 (en) 2008-09-05 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
CN103730515B (zh) 2009-03-09 2016-08-17 株式会社半导体能源研究所 半导体器件
US9018109B2 (en) 2009-03-10 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including silicon nitride layer and manufacturing method thereof
US8598586B2 (en) * 2009-12-21 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
KR20130045418A (ko) 2010-04-23 2013-05-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US8338240B2 (en) 2010-10-01 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59213169A (ja) * 1983-05-19 1984-12-03 Nec Corp 薄膜トランジスタ
JPS6043869A (ja) * 1983-08-19 1985-03-08 Semiconductor Energy Lab Co Ltd 半導体装置
JPS61188969A (ja) * 1985-02-18 1986-08-22 Matsushita Electric Ind Co Ltd 薄膜トランジスタ
JPS62160769A (ja) * 1986-01-10 1987-07-16 Hitachi Ltd 薄膜トランジスタ素子
JPS6457755A (en) * 1987-08-28 1989-03-06 Sumitomo Metal Ind Thin-film semiconductor element
JPH01291467A (ja) * 1988-05-19 1989-11-24 Toshiba Corp 薄膜トランジスタ
JPH0228624A (ja) * 1988-07-18 1990-01-30 Fujitsu Ltd 薄膜トランジスタ

Also Published As

Publication number Publication date
EP0449539A2 (de) 1991-10-02
EP0449539B1 (de) 1996-07-03
EP0449539A3 (en) 1991-11-06
DE69120574D1 (de) 1996-08-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee