DE69013057D1 - Hochspannungsdünnschichttransistor. - Google Patents
Hochspannungsdünnschichttransistor.Info
- Publication number
- DE69013057D1 DE69013057D1 DE69013057T DE69013057T DE69013057D1 DE 69013057 D1 DE69013057 D1 DE 69013057D1 DE 69013057 T DE69013057 T DE 69013057T DE 69013057 T DE69013057 T DE 69013057T DE 69013057 D1 DE69013057 D1 DE 69013057D1
- Authority
- DE
- Germany
- Prior art keywords
- thin film
- high voltage
- film transistor
- voltage thin
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/356,900 US4998146A (en) | 1989-05-24 | 1989-05-24 | High voltage thin film transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69013057D1 true DE69013057D1 (de) | 1994-11-10 |
DE69013057T2 DE69013057T2 (de) | 1995-05-24 |
Family
ID=23403427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69013057T Expired - Lifetime DE69013057T2 (de) | 1989-05-24 | 1990-05-18 | Hochspannungsdünnschichttransistor. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4998146A (de) |
EP (1) | EP0399737B1 (de) |
JP (1) | JP2763048B2 (de) |
DE (1) | DE69013057T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0442579A (ja) * | 1990-06-08 | 1992-02-13 | Seiko Epson Corp | 薄膜トランジスタ及び製造方法 |
US5073723A (en) * | 1990-08-10 | 1991-12-17 | Xerox Corporation | Space charge current limited shunt in a cascode circuit for hvtft devices |
DE69209678T2 (de) * | 1991-02-01 | 1996-10-10 | Philips Electronics Nv | Halbleiteranordnung für Hochspannungsverwendung und Verfahren zur Herstellung |
US5166960A (en) * | 1992-04-20 | 1992-11-24 | Xerox Corporation | Parallel multi-phased a-Si shift register for fast addressing of an a-Si array |
US5237346A (en) * | 1992-04-20 | 1993-08-17 | Xerox Corporation | Integrated thin film transistor electrographic writing head |
US5337080A (en) * | 1993-04-27 | 1994-08-09 | Xerox Corporation | Amorphous silicon electrographic writing head assembly with protective cover |
US6100909A (en) * | 1998-03-02 | 2000-08-08 | Xerox Corporation | Matrix addressable array for digital xerography |
EP1524685B1 (de) | 2003-10-17 | 2013-01-23 | Imec | Verfahren zur Herstellung einer Halbleitervorrichtung mit einer dielektrischen Schicht aus Silizium-Oxynitrid |
US6912082B1 (en) * | 2004-03-11 | 2005-06-28 | Palo Alto Research Center Incorporated | Integrated driver electronics for MEMS device using high voltage thin film transistors |
US7755654B2 (en) * | 2006-07-25 | 2010-07-13 | Hewlett-Packard Development Company, L.P. | Pixel |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2316118C3 (de) * | 1973-03-30 | 1975-11-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung von Feldeffekttransistoren durch Anwendung einer selektiven Getterung |
JPS53138281A (en) * | 1977-05-09 | 1978-12-02 | Nec Corp | Insulated-gate field effect transistor |
JPS56161676A (en) * | 1980-05-16 | 1981-12-12 | Japan Electronic Ind Dev Assoc<Jeida> | Electrode structure for thin film transistor |
JPS58197775A (ja) * | 1982-05-13 | 1983-11-17 | Canon Inc | 薄膜トランジスタ |
JPH0658966B2 (ja) * | 1982-05-17 | 1994-08-03 | キヤノン株式会社 | 半導体素子 |
DE3331601A1 (de) * | 1982-09-02 | 1984-03-08 | Canon K.K., Tokyo | Halbleitervorrichtung |
US4752814A (en) * | 1984-03-12 | 1988-06-21 | Xerox Corporation | High voltage thin film transistor |
DE3581549D1 (de) * | 1984-03-12 | 1991-03-07 | Xerox Corp | Duennfilm-transistor fuer hohe spannungen. |
EP0166261A3 (de) * | 1984-06-27 | 1989-01-11 | Energy Conversion Devices, Inc. | Statisches Feld induzierte Halbleiteranordnungen |
US4597001A (en) * | 1984-10-05 | 1986-06-24 | General Electric Company | Thin film field-effect transistors with tolerance to electrode misalignment |
US4704623A (en) * | 1985-08-02 | 1987-11-03 | General Electric Company | Doping for low capacitance amorphous silicon field effect transistor |
JPS62213165A (ja) * | 1986-03-13 | 1987-09-19 | Nec Corp | 薄膜トランジスタ |
JPH0714009B2 (ja) * | 1987-10-15 | 1995-02-15 | 日本電気株式会社 | Mos型半導体記憶回路装置 |
-
1989
- 1989-05-24 US US07/356,900 patent/US4998146A/en not_active Expired - Lifetime
-
1990
- 1990-05-17 JP JP2128096A patent/JP2763048B2/ja not_active Expired - Lifetime
- 1990-05-18 DE DE69013057T patent/DE69013057T2/de not_active Expired - Lifetime
- 1990-05-18 EP EP90305434A patent/EP0399737B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4998146A (en) | 1991-03-05 |
DE69013057T2 (de) | 1995-05-24 |
EP0399737B1 (de) | 1994-10-05 |
JP2763048B2 (ja) | 1998-06-11 |
JPH0319371A (ja) | 1991-01-28 |
EP0399737A1 (de) | 1990-11-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |