DE3581549D1 - Duennfilm-transistor fuer hohe spannungen. - Google Patents
Duennfilm-transistor fuer hohe spannungen.Info
- Publication number
- DE3581549D1 DE3581549D1 DE8585301362T DE3581549T DE3581549D1 DE 3581549 D1 DE3581549 D1 DE 3581549D1 DE 8585301362 T DE8585301362 T DE 8585301362T DE 3581549 T DE3581549 T DE 3581549T DE 3581549 D1 DE3581549 D1 DE 3581549D1
- Authority
- DE
- Germany
- Prior art keywords
- thin film
- high voltage
- film transistor
- transistor
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Amplifiers (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58848584A | 1984-03-12 | 1984-03-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3581549D1 true DE3581549D1 (de) | 1991-03-07 |
Family
ID=24354026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585301362T Expired - Fee Related DE3581549D1 (de) | 1984-03-12 | 1985-02-28 | Duennfilm-transistor fuer hohe spannungen. |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0156528B1 (de) |
JP (1) | JPS60207384A (de) |
CA (1) | CA1227580A (de) |
DE (1) | DE3581549D1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4757361A (en) * | 1986-07-23 | 1988-07-12 | International Business Machines Corporation | Amorphous thin film transistor device |
JPH0714009B2 (ja) * | 1987-10-15 | 1995-02-15 | 日本電気株式会社 | Mos型半導体記憶回路装置 |
US4998146A (en) * | 1989-05-24 | 1991-03-05 | Xerox Corporation | High voltage thin film transistor |
US4984041A (en) * | 1989-07-28 | 1991-01-08 | Xerox Corporation | High voltage thin film transistor with second control electrode |
JPH0824192B2 (ja) * | 1989-09-13 | 1996-03-06 | ゼロックス コーポレーション | 電子装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58115864A (ja) * | 1981-12-28 | 1983-07-09 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置 |
-
1985
- 1985-02-28 DE DE8585301362T patent/DE3581549D1/de not_active Expired - Fee Related
- 1985-02-28 EP EP19850301362 patent/EP0156528B1/de not_active Expired - Lifetime
- 1985-02-28 CA CA000475501A patent/CA1227580A/en not_active Expired
- 1985-03-05 JP JP4354885A patent/JPS60207384A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60207384A (ja) | 1985-10-18 |
JPH0558584B2 (de) | 1993-08-26 |
EP0156528A3 (en) | 1987-08-05 |
CA1227580A (en) | 1987-09-29 |
EP0156528B1 (de) | 1991-01-30 |
EP0156528A2 (de) | 1985-10-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3861707D1 (de) | Mos-transistoren fuer hohe spannungen. | |
DE3574777D1 (de) | Hochspannungsgeraet. | |
DE3587240D1 (de) | Duennfilmhalbleiterfotodetektoren fuer verarmungsbetrieb. | |
DE3583469D1 (de) | Zusammensetzungen fuer selbstkleber. | |
DE3576883D1 (de) | Silizium-auf-isolator-transistor. | |
DE3586518D1 (de) | Aufbereitungseinrichtung fuer dokumentbilder. | |
DE3686605D1 (de) | Photovoltaische duennfilmvorrichtung. | |
DE68909973D1 (de) | Dünnfilmtransistor. | |
KR860004965A (ko) | 대전방지성이 우수한 필름 | |
DE68910249D1 (de) | Hochspannungsdünnschichttransistoren. | |
DE3650210D1 (de) | Leitfähige Dickschichtzusammensetzung. | |
GB2169746B (en) | Thin film transistor | |
DK590785A (da) | Tykfilm-modstandspraeparater | |
DE3576764D1 (de) | Halbleitervorrichtungen fuer hohe spannungen. | |
KR850001478A (ko) | 박막 트랜지스터 | |
DE3485936D1 (de) | Elektrodenanordnung fuer einen aggregometer. | |
DE3585076D1 (de) | Lipoproteinsorptionsmittel fuer haemoperfusionsanwendung. | |
DE3574508D1 (de) | Schneidegeraet fuer filmbaender. | |
DE3586404D1 (de) | Magnetischer duenner film. | |
DE3670977D1 (de) | Hochtemperatur-gleitmittel fuer polyolefinfilm. | |
DE3689100D1 (de) | Zusammensetzung fuer harte kontaktlinsen. | |
DK364385D0 (da) | Tykfilmlederpraeparat | |
DE69013057D1 (de) | Hochspannungsdünnschichttransistor. | |
DE3779202D1 (de) | Amorphe duennfilmtransistoranordnung. | |
DE3882920D1 (de) | Haft-klebemittel-zusammensetzung fuer halbleiter. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |