DE3576764D1 - Halbleitervorrichtungen fuer hohe spannungen. - Google Patents

Halbleitervorrichtungen fuer hohe spannungen.

Info

Publication number
DE3576764D1
DE3576764D1 DE8585201488T DE3576764T DE3576764D1 DE 3576764 D1 DE3576764 D1 DE 3576764D1 DE 8585201488 T DE8585201488 T DE 8585201488T DE 3576764 T DE3576764 T DE 3576764T DE 3576764 D1 DE3576764 D1 DE 3576764D1
Authority
DE
Germany
Prior art keywords
high voltage
semiconductor devices
semiconductor
devices
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585201488T
Other languages
English (en)
Inventor
David James Coe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3576764D1 publication Critical patent/DE3576764D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE8585201488T 1984-09-26 1985-09-18 Halbleitervorrichtungen fuer hohe spannungen. Expired - Lifetime DE3576764D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08424296A GB2165090A (en) 1984-09-26 1984-09-26 Improving the field distribution in high voltage semiconductor devices

Publications (1)

Publication Number Publication Date
DE3576764D1 true DE3576764D1 (de) 1990-04-26

Family

ID=10567277

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585201488T Expired - Lifetime DE3576764D1 (de) 1984-09-26 1985-09-18 Halbleitervorrichtungen fuer hohe spannungen.

Country Status (5)

Country Link
US (1) US4777521A (de)
EP (1) EP0176146B1 (de)
JP (1) JPS6188566A (de)
DE (1) DE3576764D1 (de)
GB (1) GB2165090A (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0279403A3 (de) * 1987-02-16 1988-12-07 Nec Corporation Vertikaler MOS-Feldeffekttransistor mit hoher Spannungsfestigkeit und hoher Schaltgeschwindigkeit
US5285094A (en) * 1987-08-24 1994-02-08 Hitachi, Ltd. Vertical insulated gate semiconductor device with less influence from the parasitic bipolar effect
JPH0254969A (ja) * 1988-08-19 1990-02-23 Fuji Electric Co Ltd Ｍｏｓ型半導体装置
EP0416805B1 (de) * 1989-08-30 1996-11-20 Siliconix, Inc. Transistor mit Spannungsbegrenzungsanordnung
US5521105A (en) * 1994-08-12 1996-05-28 United Microelectronics Corporation Method of forming counter-doped island in power MOSFET
US5777360A (en) * 1994-11-02 1998-07-07 Lsi Logic Corporation Hexagonal field programmable gate array architecture
US5631581A (en) * 1995-05-10 1997-05-20 Lsi Logic Corporation Microelectronic integrated circuit including triangular semiconductor "and" gate device
US5838050A (en) * 1996-06-19 1998-11-17 Winbond Electronics Corp. Hexagon CMOS device
DE19823944A1 (de) 1998-05-28 1999-12-02 Siemens Ag Leistungsdioden-Struktur
US7300942B2 (en) 2002-07-16 2007-11-27 Biotica Technology Limited Production of polyketides and other natural products
US7279743B2 (en) 2003-12-02 2007-10-09 Vishay-Siliconix Closed cell trench metal-oxide-semiconductor field effect transistor
US8183629B2 (en) * 2004-05-13 2012-05-22 Vishay-Siliconix Stacked trench metal-oxide-semiconductor field effect transistor device
JP2006019553A (ja) * 2004-07-02 2006-01-19 Matsushita Electric Ind Co Ltd 縦型半導体装置
US8471390B2 (en) 2006-05-12 2013-06-25 Vishay-Siliconix Power MOSFET contact metallization
US8368126B2 (en) * 2007-04-19 2013-02-05 Vishay-Siliconix Trench metal oxide semiconductor with recessed trench material and remote contacts
US9306056B2 (en) 2009-10-30 2016-04-05 Vishay-Siliconix Semiconductor device with trench-like feed-throughs

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1140822A (en) * 1967-01-26 1969-01-22 Westinghouse Brake & Signal Semi-conductor elements
US4003072A (en) * 1972-04-20 1977-01-11 Sony Corporation Semiconductor device with high voltage breakdown resistance
FR2466101A1 (fr) * 1979-09-18 1981-03-27 Thomson Csf Procede de formation de couches de silicium polycristallin localisees sur des zones recouvertes de silice d'une plaquette de silicium et application a la fabrication d'un transistor mos non plan autoaligne
JPS5645074A (en) * 1979-09-20 1981-04-24 Nippon Telegr & Teleph Corp <Ntt> High-pressure-resistance mos type semiconductor device
JPS56103448A (en) * 1980-01-21 1981-08-18 Hitachi Ltd Semiconductor ic device
DE3012185A1 (de) * 1980-03-28 1981-10-08 Siemens AG, 1000 Berlin und 8000 München Feldeffekttransistor
US4300150A (en) * 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device
US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
NL187415C (nl) * 1980-09-08 1991-09-16 Philips Nv Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
US4412242A (en) * 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
US4414560A (en) * 1980-11-17 1983-11-08 International Rectifier Corporation Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region
DE3224642A1 (de) * 1982-07-01 1984-01-05 Siemens AG, 1000 Berlin und 8000 München Igfet mit injektorzone
DE3224618A1 (de) * 1982-07-01 1984-01-05 Siemens AG, 1000 Berlin und 8000 München Igfet mit ladungstraegerinjektion
FR2537780A1 (fr) * 1982-12-08 1984-06-15 Radiotechnique Compelec Dispositif mos fet de puissance a structure plane multicellulaire
NL8302092A (nl) * 1983-06-13 1985-01-02 Philips Nv Halfgeleiderinrichting bevattende een veldeffekttransistor.
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
US4631564A (en) * 1984-10-23 1986-12-23 Rca Corporation Gate shield structure for power MOS device

Also Published As

Publication number Publication date
EP0176146A3 (en) 1987-04-15
GB2165090A (en) 1986-04-03
JPS6188566A (ja) 1986-05-06
JPH0588554B2 (de) 1993-12-22
EP0176146B1 (de) 1990-03-21
US4777521A (en) 1988-10-11
EP0176146A2 (de) 1986-04-02
GB8424296D0 (en) 1984-10-31

Similar Documents

Publication Publication Date Title
DE3574777D1 (de) Hochspannungsgeraet.
DE3585364D1 (de) Halbleitervorrichtungen mit hoher durchbruchspannung.
DE3861707D1 (de) Mos-transistoren fuer hohe spannungen.
DE3481957D1 (de) Halbleiteranordnung.
DE3583302D1 (de) Halbleiteranordnung.
DE3584330D1 (de) Halbleiterlaservorrichtung.
DE3675565D1 (de) Substratstruktur fuer halbleiteranordnung.
DE3583575D1 (de) Komplementaere halbleiteranordnung.
DE3587748D1 (de) Halbleiterlaseranordnung.
DE3679108D1 (de) Halbleiteranordnungen.
DE3584301D1 (de) Hochfrequenz-halbleiteranordnung.
DE3583897D1 (de) Halbleiterschalter.
DE3576764D1 (de) Halbleitervorrichtungen fuer hohe spannungen.
DE3582653D1 (de) Halbleiteranordnung.
DE3575501D1 (de) Halbleiterlaser.
DE3584683D1 (de) Feldanordnung fuer eeproms.
DE3579991D1 (de) Halbleiterlaser.
DE3686383D1 (de) Versiegelungsstruktur fuer halbleiterbauelement.
DE3680265D1 (de) Halbleiterschaltungsanordnung.
DE3485936D1 (de) Elektrodenanordnung fuer einen aggregometer.
DE3586568D1 (de) Halbleitereinrichtung.
DE3586810D1 (de) Halbleiterschaltung.
DE3581557D1 (de) Halbleiterlaser.
DE3686407D1 (de) Titannitrid-elektroden fuer thermoelektrische generatoren.
DE3579826D1 (de) Halbleiterlaser.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee