DE3583897D1 - Halbleiterschalter. - Google Patents

Halbleiterschalter.

Info

Publication number
DE3583897D1
DE3583897D1 DE8585107682T DE3583897T DE3583897D1 DE 3583897 D1 DE3583897 D1 DE 3583897D1 DE 8585107682 T DE8585107682 T DE 8585107682T DE 3583897 T DE3583897 T DE 3583897T DE 3583897 D1 DE3583897 D1 DE 3583897D1
Authority
DE
Germany
Prior art keywords
semiconductor switch
semiconductor
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585107682T
Other languages
English (en)
Inventor
Yoshitaka Sugawara
Junjiro Kitano
Tadakatsu Kimura
Yasunobu Inabe
Masa-Aki Tanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP12749184A external-priority patent/JPS617665A/ja
Priority claimed from JP18266584A external-priority patent/JPS6161521A/ja
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3583897D1 publication Critical patent/DE3583897D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
DE8585107682T 1984-06-22 1985-06-21 Halbleiterschalter. Expired - Lifetime DE3583897D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP12749184A JPS617665A (ja) 1984-06-22 1984-06-22 半導体装置
JP18266584A JPS6161521A (ja) 1984-09-03 1984-09-03 電界駆動型ｐｎｐｎスイツチ回路

Publications (1)

Publication Number Publication Date
DE3583897D1 true DE3583897D1 (de) 1991-10-02

Family

ID=26463446

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585107682T Expired - Lifetime DE3583897D1 (de) 1984-06-22 1985-06-21 Halbleiterschalter.

Country Status (3)

Country Link
US (1) US4794441A (de)
EP (2) EP0367301A3 (de)
DE (1) DE3583897D1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0821713B2 (ja) * 1987-02-26 1996-03-04 株式会社東芝 導電変調型ｍｏｓｆｅｔ
JPH01133414A (ja) * 1987-11-18 1989-05-25 Mitsubishi Electric Corp カスコードＢｉＭＯＳ駆動回路
JPH0716009B2 (ja) * 1988-12-02 1995-02-22 株式会社日立製作所 横型絶縁ゲートバイポーラトランジスタ
US5016076A (en) * 1990-02-28 1991-05-14 At&T Bell Laboratories Lateral MOS controlled thyristor
US5278076A (en) * 1990-02-28 1994-01-11 At&T Bell Laboratories Method of marking a lateral mos controlled thyristor
JPH0421211A (ja) * 1990-05-16 1992-01-24 Toshiba Corp 半導体素子の駆動方法およびその駆動装置
US5240865A (en) * 1990-07-30 1993-08-31 Texas Instruments Incorporated Method of forming a thyristor on an SOI substrate
US5028978A (en) * 1990-09-27 1991-07-02 Hall John H Complementary bipolar complementary CMOS (CBiCMOS) transmission gate
US5204541A (en) * 1991-06-28 1993-04-20 Texas Instruments Incorporated Gated thyristor and process for its simultaneous fabrication with high- and low-voltage semiconductor devices
EP0527600B1 (de) * 1991-08-08 2003-06-25 Kabushiki Kaisha Toshiba Bipolartransistor mit isoliertem Graben-Gate
US5600160A (en) * 1993-04-14 1997-02-04 Hvistendahl; Douglas D. Multichannel field effect device
FR2712428B1 (fr) * 1993-11-10 1996-02-09 Sgs Thomson Microelectronics Commutateur bidirectionnel à commande en tension.
JP3386943B2 (ja) * 1995-10-30 2003-03-17 三菱電機株式会社 半導体装置
JPH11135775A (ja) * 1997-10-27 1999-05-21 Mitsubishi Electric Corp 半導体装置
US6225165B1 (en) * 1998-05-13 2001-05-01 Micron Technology, Inc. High density SRAM cell with latched vertical transistors
WO2002007312A2 (en) * 2000-07-13 2002-01-24 Isothermal Systems Research, Inc. Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor
WO2004106891A2 (en) 2003-05-22 2004-12-09 University Of Hawaii Ultrasensitive biochemical sensor
US7376008B2 (en) * 2003-08-07 2008-05-20 Contour Seminconductor, Inc. SCR matrix storage device
US20050205891A1 (en) * 2004-03-18 2005-09-22 Holm-Kennedy James W Distributed channel bipolar devices and architectures
WO2011038422A2 (en) * 2009-05-21 2011-03-31 Tshwane University Of Technology Wavelength specific silicon light emitting structure
WO2011058852A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5540801B2 (ja) * 2010-03-19 2014-07-02 富士通セミコンダクター株式会社 Ｅｓｄ保護回路及び半導体装置
JP5779155B2 (ja) * 2012-08-28 2015-09-16 株式会社東芝 半導体装置
CN103441748A (zh) * 2013-07-21 2013-12-11 马东林 晶体管电桥
US9808573B1 (en) * 2016-03-18 2017-11-07 Busara Technologies, LLC Organizational system for medical venous access lines
US9741839B1 (en) * 2016-06-21 2017-08-22 Powerex, Inc. Gate structure of thyristor

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3401319A (en) * 1966-03-08 1968-09-10 Gen Micro Electronics Inc Integrated latch circuit
JPS5135114B1 (de) * 1970-12-28 1976-09-30
JPS5346588B2 (de) 1974-03-11 1978-12-14
US4015143A (en) * 1974-03-11 1977-03-29 Hitachi, Ltd. Semiconductor switch
JPS5346589B2 (de) 1974-03-15 1978-12-14
JPS5346589A (en) * 1976-10-08 1978-04-26 Omron Tateisi Electronics Co Conveying body induction method
JPS586234B2 (ja) * 1977-11-17 1983-02-03 富士通株式会社 半導体記憶装置
US4199774A (en) * 1978-09-18 1980-04-22 The Board Of Trustees Of The Leland Stanford Junior University Monolithic semiconductor switching device
DD140944A1 (de) * 1978-12-20 1980-04-02 Reinhold Paul Feldeffektgesteuerte halbleiter-vierschicht-anordnung
EP0047392B1 (de) * 1980-08-25 1986-11-20 Deutsche ITT Industries GmbH Hochvolt-Halbleiterschalter
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
JPS57196626A (en) 1981-05-28 1982-12-02 Nec Corp Electronic circuit
JPS57208177A (en) * 1981-06-17 1982-12-21 Nec Corp Semiconductor negative resistance element
JPS57208176A (en) * 1981-06-17 1982-12-21 Nec Corp Semiconductor negative resistance element
IE56341B1 (en) * 1981-12-16 1991-07-03 Gen Electric Multicellular thyristor
US5014102A (en) * 1982-04-01 1991-05-07 General Electric Company MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal
DE3230741A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Halbleiterschalter mit einem abschaltbaren thyristor

Also Published As

Publication number Publication date
EP0166390A3 (en) 1988-06-01
EP0166390B1 (de) 1991-08-28
EP0166390A2 (de) 1986-01-02
EP0367301A2 (de) 1990-05-09
US4794441A (en) 1988-12-27
EP0367301A3 (de) 1990-05-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee