EP0166390A3 - Semiconductor switch circuit - Google Patents

Semiconductor switch circuit Download PDF

Info

Publication number
EP0166390A3
EP0166390A3 EP85107682A EP85107682A EP0166390A3 EP 0166390 A3 EP0166390 A3 EP 0166390A3 EP 85107682 A EP85107682 A EP 85107682A EP 85107682 A EP85107682 A EP 85107682A EP 0166390 A3 EP0166390 A3 EP 0166390A3
Authority
EP
European Patent Office
Prior art keywords
switch circuit
semiconductor switch
semiconductor
circuit
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP85107682A
Other versions
EP0166390A2 (en
EP0166390B1 (en
Inventor
Yoshitaka Sugawara
Junjiro Kitano
Tadakatsu Kimura
Yasunobu Inabe
Masa-Aki Tanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP12749184A external-priority patent/JPS617665A/en
Priority claimed from JP18266584A external-priority patent/JPS6161521A/en
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Publication of EP0166390A2 publication Critical patent/EP0166390A2/en
Publication of EP0166390A3 publication Critical patent/EP0166390A3/en
Application granted granted Critical
Publication of EP0166390B1 publication Critical patent/EP0166390B1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
EP85107682A 1984-06-22 1985-06-21 Semiconductor switch circuit Expired EP0166390B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP127491/84 1984-06-22
JP12749184A JPS617665A (en) 1984-06-22 1984-06-22 Semiconductor device
JP18266584A JPS6161521A (en) 1984-09-03 1984-09-03 Electric field drive type pnpn switch circuit
JP182665/84 1984-09-03

Related Child Applications (2)

Application Number Title Priority Date Filing Date
EP89123184A Division EP0367301A3 (en) 1984-06-22 1985-06-21 Semiconductor switch circuit
EP89123184.7 Division-Into 1989-12-14

Publications (3)

Publication Number Publication Date
EP0166390A2 EP0166390A2 (en) 1986-01-02
EP0166390A3 true EP0166390A3 (en) 1988-06-01
EP0166390B1 EP0166390B1 (en) 1991-08-28

Family

ID=26463446

Family Applications (2)

Application Number Title Priority Date Filing Date
EP89123184A Ceased EP0367301A3 (en) 1984-06-22 1985-06-21 Semiconductor switch circuit
EP85107682A Expired EP0166390B1 (en) 1984-06-22 1985-06-21 Semiconductor switch circuit

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP89123184A Ceased EP0367301A3 (en) 1984-06-22 1985-06-21 Semiconductor switch circuit

Country Status (3)

Country Link
US (1) US4794441A (en)
EP (2) EP0367301A3 (en)
DE (1) DE3583897D1 (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0821713B2 (en) * 1987-02-26 1996-03-04 株式会社東芝 Conduction modulation type MOSFET
JPH01133414A (en) * 1987-11-18 1989-05-25 Mitsubishi Electric Corp Cascode bimos driving circuit
JPH0716009B2 (en) * 1988-12-02 1995-02-22 株式会社日立製作所 Lateral insulated gate bipolar transistor
US5016076A (en) * 1990-02-28 1991-05-14 At&T Bell Laboratories Lateral MOS controlled thyristor
US5278076A (en) * 1990-02-28 1994-01-11 At&T Bell Laboratories Method of marking a lateral mos controlled thyristor
JPH0421211A (en) * 1990-05-16 1992-01-24 Toshiba Corp Method and device for driving semiconductor element
US5240865A (en) * 1990-07-30 1993-08-31 Texas Instruments Incorporated Method of forming a thyristor on an SOI substrate
US5028978A (en) * 1990-09-27 1991-07-02 Hall John H Complementary bipolar complementary CMOS (CBiCMOS) transmission gate
US5204541A (en) * 1991-06-28 1993-04-20 Texas Instruments Incorporated Gated thyristor and process for its simultaneous fabrication with high- and low-voltage semiconductor devices
EP1469524A3 (en) * 1991-08-08 2005-07-06 Kabushiki Kaisha Toshiba Insulated trench gate bipolar transistor
US5600160A (en) * 1993-04-14 1997-02-04 Hvistendahl; Douglas D. Multichannel field effect device
FR2712428B1 (en) * 1993-11-10 1996-02-09 Sgs Thomson Microelectronics Two-way switch with voltage control.
JP3386943B2 (en) * 1995-10-30 2003-03-17 三菱電機株式会社 Semiconductor device
JPH11135775A (en) * 1997-10-27 1999-05-21 Mitsubishi Electric Corp Semiconductor device
US6225165B1 (en) * 1998-05-13 2001-05-01 Micron Technology, Inc. High density SRAM cell with latched vertical transistors
WO2002007312A2 (en) 2000-07-13 2002-01-24 Isothermal Systems Research, Inc. Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor
WO2004106891A2 (en) 2003-05-22 2004-12-09 University Of Hawaii Ultrasensitive biochemical sensor
US7376008B2 (en) * 2003-08-07 2008-05-20 Contour Seminconductor, Inc. SCR matrix storage device
US20050205891A1 (en) * 2004-03-18 2005-09-22 Holm-Kennedy James W Distributed channel bipolar devices and architectures
US9431577B2 (en) * 2009-06-15 2016-08-30 Tshwane University Of Technology Wavelength specific silicon light emitting structure
KR101721850B1 (en) 2009-11-13 2017-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5540801B2 (en) * 2010-03-19 2014-07-02 富士通セミコンダクター株式会社 ESD protection circuit and semiconductor device
JP5779155B2 (en) * 2012-08-28 2015-09-16 株式会社東芝 Semiconductor device
CN103441748A (en) * 2013-07-21 2013-12-11 马东林 Transistored bridge
US9808573B1 (en) * 2016-03-18 2017-11-07 Busara Technologies, LLC Organizational system for medical venous access lines
US9741839B1 (en) * 2016-06-21 2017-08-22 Powerex, Inc. Gate structure of thyristor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0047392A2 (en) * 1980-08-25 1982-03-17 Deutsche ITT Industries GmbH High-voltage semiconductor switch
EP0081642A2 (en) * 1981-12-16 1983-06-22 General Electric Company Multicellular thyristor
FR2524711A1 (en) * 1982-04-01 1983-10-07 Gen Electric INTEGRATED DEVICE COMPRISING A THYRISTOR OR BIPOLAR TRANSISTOR WITH CONTROL OF LOCKING AND UNLOCKING BY FIELD EFFECT TRANSISTORS

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3401319A (en) * 1966-03-08 1968-09-10 Gen Micro Electronics Inc Integrated latch circuit
JPS5135114B1 (en) * 1970-12-28 1976-09-30
US4015143A (en) * 1974-03-11 1977-03-29 Hitachi, Ltd. Semiconductor switch
JPS5346588B2 (en) 1974-03-11 1978-12-14
JPS5346589B2 (en) 1974-03-15 1978-12-14
JPS5346589A (en) * 1976-10-08 1978-04-26 Omron Tateisi Electronics Co Conveying body induction method
JPS586234B2 (en) * 1977-11-17 1983-02-03 富士通株式会社 semiconductor storage device
US4199774A (en) * 1978-09-18 1980-04-22 The Board Of Trustees Of The Leland Stanford Junior University Monolithic semiconductor switching device
DD140944A1 (en) * 1978-12-20 1980-04-02 Reinhold Paul FIELD-EFFECT-CONTROLLED SEMICONDUCTOR-SURFACE ARRANGEMENT
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
JPS57196626A (en) * 1981-05-28 1982-12-02 Nec Corp Electronic circuit
JPS57208177A (en) * 1981-06-17 1982-12-21 Nec Corp Semiconductor negative resistance element
JPS57208176A (en) * 1981-06-17 1982-12-21 Nec Corp Semiconductor negative resistance element
DE3230741A1 (en) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München SEMICONDUCTOR SWITCH WITH A DISABLE THYRISTOR

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0047392A2 (en) * 1980-08-25 1982-03-17 Deutsche ITT Industries GmbH High-voltage semiconductor switch
EP0081642A2 (en) * 1981-12-16 1983-06-22 General Electric Company Multicellular thyristor
FR2524711A1 (en) * 1982-04-01 1983-10-07 Gen Electric INTEGRATED DEVICE COMPRISING A THYRISTOR OR BIPOLAR TRANSISTOR WITH CONTROL OF LOCKING AND UNLOCKING BY FIELD EFFECT TRANSISTORS

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN, vol. 7, no. 45(E-160)[1190], 23rd February 1983; & JP-A-57 196 626 (NIPPON DENKI K.K.) 02-12-1982 *

Also Published As

Publication number Publication date
DE3583897D1 (en) 1991-10-02
US4794441A (en) 1988-12-27
EP0367301A3 (en) 1990-05-16
EP0367301A2 (en) 1990-05-09
EP0166390A2 (en) 1986-01-02
EP0166390B1 (en) 1991-08-28

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