DE69009298D1 - Hochspannungs-Dünnschichttransistor mit zweitem Gate. - Google Patents
Hochspannungs-Dünnschichttransistor mit zweitem Gate.Info
- Publication number
- DE69009298D1 DE69009298D1 DE69009298T DE69009298T DE69009298D1 DE 69009298 D1 DE69009298 D1 DE 69009298D1 DE 69009298 T DE69009298 T DE 69009298T DE 69009298 T DE69009298 T DE 69009298T DE 69009298 D1 DE69009298 D1 DE 69009298D1
- Authority
- DE
- Germany
- Prior art keywords
- gate
- thin film
- high voltage
- film transistor
- voltage thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/366,822 US4984040A (en) | 1989-06-15 | 1989-06-15 | High voltage thin film transistor with second gate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69009298D1 true DE69009298D1 (de) | 1994-07-07 |
| DE69009298T2 DE69009298T2 (de) | 1995-03-02 |
Family
ID=23444693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69009298T Expired - Fee Related DE69009298T2 (de) | 1989-06-15 | 1990-06-14 | Hochspannungs-Dünnschichttransistor mit zweitem Gate. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4984040A (de) |
| EP (1) | EP0403279B1 (de) |
| JP (1) | JPH0648728B2 (de) |
| DE (1) | DE69009298T2 (de) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5124769A (en) * | 1990-03-02 | 1992-06-23 | Nippon Telegraph And Telephone Corporation | Thin film transistor |
| JP2616153B2 (ja) * | 1990-06-20 | 1997-06-04 | 富士ゼロックス株式会社 | Ｅｌ発光装置 |
| JPH0480833A (ja) * | 1990-07-24 | 1992-03-13 | Yokogawa Hewlett Packard Ltd | 高速エミュレーション・メモリ回路 |
| JP3121676B2 (ja) * | 1992-05-29 | 2001-01-09 | 株式会社東芝 | 薄膜トランジスタ及び薄膜トランジスタを用いたスタティックｒａｍ |
| US5337080A (en) * | 1993-04-27 | 1994-08-09 | Xerox Corporation | Amorphous silicon electrographic writing head assembly with protective cover |
| WO1996022616A1 (en) * | 1995-01-19 | 1996-07-25 | Litton Systems (Canada) Limited | Flat panel imaging device |
| US6022770A (en) * | 1998-03-24 | 2000-02-08 | International Business Machines Corporation | NVRAM utilizing high voltage TFT device and method for making the same |
| US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
| JP2005524110A (ja) * | 2002-04-24 | 2005-08-11 | イー−インク コーポレイション | 電子表示装置 |
| JP4407311B2 (ja) * | 2004-02-20 | 2010-02-03 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
| EP1774620B1 (de) | 2004-06-23 | 2014-10-01 | Peregrine Semiconductor Corporation | Integriertes hf-front-end |
| USRE48965E1 (en) | 2005-07-11 | 2022-03-08 | Psemi Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US7890891B2 (en) | 2005-07-11 | 2011-02-15 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US9653601B2 (en) | 2005-07-11 | 2017-05-16 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| US8742502B2 (en) | 2005-07-11 | 2014-06-03 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
| US20080076371A1 (en) | 2005-07-11 | 2008-03-27 | Alexander Dribinsky | Circuit and method for controlling charge injection in radio frequency switches |
| US7960772B2 (en) * | 2007-04-26 | 2011-06-14 | Peregrine Semiconductor Corporation | Tuning capacitance to enhance FET stack voltage withstand |
| JP5417346B2 (ja) * | 2008-02-28 | 2014-02-12 | ペレグリン セミコンダクター コーポレーション | 集積回路素子内でキャパシタをデジタル処理で同調するときに用いられる方法及び装置 |
| US8723260B1 (en) | 2009-03-12 | 2014-05-13 | Rf Micro Devices, Inc. | Semiconductor radio frequency switch with body contact |
| KR101863941B1 (ko) | 2010-06-08 | 2018-06-04 | 삼성디스플레이 주식회사 | 오프셋 구조의 박막 트랜지스터 |
| US9590674B2 (en) | 2012-12-14 | 2017-03-07 | Peregrine Semiconductor Corporation | Semiconductor devices with switchable ground-body connection |
| US20150236748A1 (en) | 2013-03-14 | 2015-08-20 | Peregrine Semiconductor Corporation | Devices and Methods for Duplexer Loss Reduction |
| EP2858114A1 (de) * | 2013-10-01 | 2015-04-08 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Transistorvorrichtung und Verfahren zur Herstellung einer solchen Vorrichtung |
| US9406695B2 (en) | 2013-11-20 | 2016-08-02 | Peregrine Semiconductor Corporation | Circuit and method for improving ESD tolerance and switching speed |
| US9831857B2 (en) | 2015-03-11 | 2017-11-28 | Peregrine Semiconductor Corporation | Power splitter with programmable output phase shift |
| US9948281B2 (en) | 2016-09-02 | 2018-04-17 | Peregrine Semiconductor Corporation | Positive logic digitally tunable capacitor |
| US10505530B2 (en) | 2018-03-28 | 2019-12-10 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
| US10886911B2 (en) | 2018-03-28 | 2021-01-05 | Psemi Corporation | Stacked FET switch bias ladders |
| US10236872B1 (en) | 2018-03-28 | 2019-03-19 | Psemi Corporation | AC coupling modules for bias ladders |
| US11476849B2 (en) | 2020-01-06 | 2022-10-18 | Psemi Corporation | High power positive logic switch |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8204855A (nl) * | 1982-12-16 | 1984-07-16 | Philips Nv | Veldeffekttransistor met geisoleerde stuurelektrode en werkwijze ter vervaardiging daarvan. |
| US4752814A (en) * | 1984-03-12 | 1988-06-21 | Xerox Corporation | High voltage thin film transistor |
| US4598305A (en) * | 1984-06-18 | 1986-07-01 | Xerox Corporation | Depletion mode thin film semiconductor photodetectors |
| JPS6197964A (ja) * | 1984-10-19 | 1986-05-16 | Toshiba Corp | 半導体装置 |
| US4748485A (en) * | 1985-03-21 | 1988-05-31 | Hughes Aircraft Company | Opposed dual-gate hybrid structure for three-dimensional integrated circuits |
| US4882295A (en) * | 1985-07-26 | 1989-11-21 | Energy Conversion Devices, Inc. | Method of making a double injection field effect transistor |
| JPS633464A (ja) * | 1986-06-24 | 1988-01-08 | Ricoh Co Ltd | 薄膜トランジスタ |
| JPS6453460A (en) * | 1987-08-24 | 1989-03-01 | Sony Corp | Mos transistor |
-
1989
- 1989-06-15 US US07/366,822 patent/US4984040A/en not_active Expired - Lifetime
-
1990
- 1990-06-08 JP JP2151459A patent/JPH0648728B2/ja not_active Expired - Fee Related
- 1990-06-14 DE DE69009298T patent/DE69009298T2/de not_active Expired - Fee Related
- 1990-06-14 EP EP90306489A patent/EP0403279B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0403279B1 (de) | 1994-06-01 |
| DE69009298T2 (de) | 1995-03-02 |
| JPH0325980A (ja) | 1991-02-04 |
| US4984040A (en) | 1991-01-08 |
| EP0403279A1 (de) | 1990-12-19 |
| JPH0648728B2 (ja) | 1994-06-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |