DE69125886D1 - Dünnfilmtransistoren - Google Patents

Dünnfilmtransistoren

Info

Publication number
DE69125886D1
DE69125886D1 DE69125886T DE69125886T DE69125886D1 DE 69125886 D1 DE69125886 D1 DE 69125886D1 DE 69125886 T DE69125886 T DE 69125886T DE 69125886 T DE69125886 T DE 69125886T DE 69125886 D1 DE69125886 D1 DE 69125886D1
Authority
DE
Germany
Prior art keywords
thin film
film transistors
transistors
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69125886T
Other languages
English (en)
Other versions
DE69125886T2 (de
Inventor
Hongyong Zhang
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2140580A external-priority patent/JP2805035B2/ja
Priority claimed from JP2293264A external-priority patent/JP2652267B2/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE69125886D1 publication Critical patent/DE69125886D1/de
Application granted granted Critical
Publication of DE69125886T2 publication Critical patent/DE69125886T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
DE69125886T 1990-05-29 1991-05-29 Dünnfilmtransistoren Expired - Lifetime DE69125886T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2140580A JP2805035B2 (ja) 1990-05-29 1990-05-29 薄膜トランジスタ
JP2293264A JP2652267B2 (ja) 1990-10-29 1990-10-29 絶縁ゲイト型半導体装置

Publications (2)

Publication Number Publication Date
DE69125886D1 true DE69125886D1 (de) 1997-06-05
DE69125886T2 DE69125886T2 (de) 1997-11-20

Family

ID=26473051

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69125886T Expired - Lifetime DE69125886T2 (de) 1990-05-29 1991-05-29 Dünnfilmtransistoren

Country Status (3)

Country Link
US (5) US5313075A (de)
EP (1) EP0459763B1 (de)
DE (1) DE69125886T2 (de)

Families Citing this family (120)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962869A (en) * 1988-09-28 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US5753542A (en) * 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
EP0445535B1 (de) * 1990-02-06 1995-02-01 Sel Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen eines Oxydfilms
DE69125886T2 (de) * 1990-05-29 1997-11-20 Semiconductor Energy Lab Dünnfilmtransistoren
US7335570B1 (en) * 1990-07-24 2008-02-26 Semiconductor Energy Laboratory Co., Ltd. Method of forming insulating films, capacitances, and semiconductor devices
US6008078A (en) * 1990-07-24 1999-12-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US5821563A (en) 1990-12-25 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device free from reverse leakage and throw leakage
US7253437B2 (en) * 1990-12-25 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Display device having a thin film transistor
US5289030A (en) 1991-03-06 1994-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide layer
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6849872B1 (en) 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP2894391B2 (ja) * 1991-09-20 1999-05-24 三菱電機株式会社 薄膜トランジスタおよびその製造方法
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
KR970000359B1 (ko) * 1991-09-26 1997-01-08 가부시기가이샤 도오시바 액정표시장치
US5424230A (en) * 1992-02-19 1995-06-13 Casio Computer Co., Ltd. Method of manufacturing a polysilicon thin film transistor
US5424244A (en) * 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JP3688726B2 (ja) * 1992-07-17 2005-08-31 株式会社東芝 半導体装置の製造方法
CN100465742C (zh) 1992-08-27 2009-03-04 株式会社半导体能源研究所 有源矩阵显示器
JP3587537B2 (ja) 1992-12-09 2004-11-10 株式会社半導体エネルギー研究所 半導体装置
JP3497198B2 (ja) * 1993-02-03 2004-02-16 株式会社半導体エネルギー研究所 半導体装置および薄膜トランジスタの作製方法
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
EP0612102B1 (de) * 1993-02-15 2001-09-26 Semiconductor Energy Laboratory Co., Ltd. Herstellungsverfahren für eine kristallisierte Halbleiterschicht
US7465679B1 (en) 1993-02-19 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Insulating film and method of producing semiconductor device
KR0143873B1 (ko) * 1993-02-19 1998-08-17 순페이 야마자끼 절연막 및 반도체장치 및 반도체 장치 제조방법
JP3107941B2 (ja) * 1993-03-05 2000-11-13 株式会社半導体エネルギー研究所 薄膜トランジスタおよびその作製方法
US6413805B1 (en) 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
JP3637069B2 (ja) 1993-03-12 2005-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
DE69416363T2 (de) * 1993-03-23 1999-09-23 Tdk Corp Abbildendes festkörperbauteil und herstellungsverfahren dafür
GB9311129D0 (en) * 1993-05-28 1993-07-14 Philips Electronics Uk Ltd Electronic devices with-film circuit elements forming a sampling circuit
JPH06349735A (ja) 1993-06-12 1994-12-22 Semiconductor Energy Lab Co Ltd 半導体装置
US5488000A (en) 1993-06-22 1996-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
US6713330B1 (en) 1993-06-22 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US6730549B1 (en) 1993-06-25 2004-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
JP2677167B2 (ja) * 1993-07-08 1997-11-17 日本電気株式会社 駆動回路内蔵型液晶表示装置の製造方法
TW357415B (en) * 1993-07-27 1999-05-01 Semiconductor Engrgy Lab Semiconductor device and process for fabricating the same
JPH0766424A (ja) * 1993-08-20 1995-03-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR100367869B1 (ko) * 1993-09-20 2003-06-09 가부시끼가이샤 히다치 세이사꾸쇼 액정표시장치
US5719065A (en) 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
KR100291971B1 (ko) 1993-10-26 2001-10-24 야마자끼 순페이 기판처리장치및방법과박막반도체디바이스제조방법
JP3108296B2 (ja) 1994-01-26 2000-11-13 三洋電機株式会社 表示装置の製造方法
JPH07225079A (ja) * 1994-02-10 1995-08-22 Sony Corp 加熱方法及び半導体装置の製造方法
US6133620A (en) * 1995-05-26 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same
US6867432B1 (en) 1994-06-09 2005-03-15 Semiconductor Energy Lab Semiconductor device having SiOxNy gate insulating film
CN1269196C (zh) * 1994-06-15 2006-08-09 精工爱普生株式会社 薄膜半导体器件的制造方法
TW406861U (en) 1994-07-28 2000-09-21 Semiconductor Energy Lab Laser processing system
US6706572B1 (en) 1994-08-31 2004-03-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film transistor using a high pressure oxidation step
JP3442500B2 (ja) 1994-08-31 2003-09-02 株式会社半導体エネルギー研究所 半導体回路の作製方法
US6670640B1 (en) 1994-09-15 2003-12-30 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
JP4083821B2 (ja) * 1994-09-15 2008-04-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW297950B (de) * 1994-12-16 1997-02-11 Handotai Energy Kenkyusho Kk
US5633456A (en) * 1995-08-04 1997-05-27 Chrysler Corporation Engine misfire detection with digital filtering
JP3444053B2 (ja) * 1995-10-13 2003-09-08 ソニー株式会社 薄膜半導体装置
US6225218B1 (en) * 1995-12-20 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
JP3645379B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5985740A (en) 1996-01-19 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including reduction of a catalyst
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6180439B1 (en) 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US7056381B1 (en) 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6465287B1 (en) 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
US5665611A (en) * 1996-01-31 1997-09-09 Micron Technology, Inc. Method of forming a thin film transistor using fluorine passivation
JP3476320B2 (ja) * 1996-02-23 2003-12-10 株式会社半導体エネルギー研究所 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法
US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP3565983B2 (ja) * 1996-04-12 2004-09-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3126661B2 (ja) * 1996-06-25 2001-01-22 株式会社半導体エネルギー研究所 液晶表示装置
FR2751131B1 (fr) * 1996-07-09 2001-11-09 Lg Electronics Inc Procede de fabrication d'un dispositif d'affichage a matrice active a cristal liquide et structure du dispositif d'affichage selon ce procede
JP3634089B2 (ja) * 1996-09-04 2005-03-30 株式会社半導体エネルギー研究所 表示装置
US6087276A (en) * 1996-10-29 2000-07-11 National Science Council Method of making a TFT having an ion plated silicon dioxide capping layer
US6291837B1 (en) * 1997-03-18 2001-09-18 Semiconductor Energy Laboratory Co., Ltd. Substrate of semiconductor device and fabrication method thereof as well as semiconductor device and fabrication method thereof
JPH11102867A (ja) 1997-07-16 1999-04-13 Sony Corp 半導体薄膜の形成方法およびプラスチック基板
US6535535B1 (en) * 1999-02-12 2003-03-18 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and semiconductor device
JP2001053283A (ja) * 1999-08-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US6717181B2 (en) 2001-02-22 2004-04-06 Semiconductor Energy Laboratory Co., Ltd. Luminescent device having thin film transistor
US6501135B1 (en) * 2001-05-04 2002-12-31 Advanced Micro Devices, Inc. Germanium-on-insulator (GOI) device
US7238557B2 (en) * 2001-11-14 2007-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6601308B2 (en) 2002-01-02 2003-08-05 Bahram Khoshnood Ambient light collecting bow sight
WO2003088280A1 (en) * 2002-04-08 2003-10-23 Council Of Scientific And Industrial Research Process for the production of neodymium-iron-boron permanent magnet alloy powder
TW535296B (en) * 2002-05-31 2003-06-01 Chunghwa Picture Tubes Ltd Method for producing thin film transistor
JP2004022575A (ja) * 2002-06-12 2004-01-22 Sanyo Electric Co Ltd 半導体装置
KR100894651B1 (ko) * 2002-07-08 2009-04-24 엘지디스플레이 주식회사 액티브 매트릭스형 유기 전계발광 표시패널 및 그의제조방법
WO2004073068A1 (en) 2003-02-14 2004-08-26 Canon Kabushiki Kaisha Radiation image pickup device
US20040169176A1 (en) * 2003-02-28 2004-09-02 Peterson Paul E. Methods of forming thin film transistors and related systems
US20050104072A1 (en) 2003-08-14 2005-05-19 Slater David B.Jr. Localized annealing of metal-silicon carbide ohmic contacts and devices so formed
TWI366701B (en) * 2004-01-26 2012-06-21 Semiconductor Energy Lab Method of manufacturing display and television
TWI258173B (en) * 2004-10-08 2006-07-11 Ind Tech Res Inst Polysilicon thin-film ion sensitive FET device and fabrication method thereof
US7605042B2 (en) * 2005-04-18 2009-10-20 Toshiba America Electronic Components, Inc. SOI bottom pre-doping merged e-SiGe for poly height reduction
EP1858075A1 (de) * 2006-05-15 2007-11-21 STMicroelectronics S.r.l. Verfahren zur Integration eines Bauelements auf einem inaktiven Substrat mit wenigstens einem passiven und einem aktiven Element und zugehöriges integriertes Bauelement
JP4289399B2 (ja) * 2006-06-22 2009-07-01 セイコーエプソン株式会社 弾性波デバイスおよび弾性波デバイスの製造方法
JP5459899B2 (ja) * 2007-06-01 2014-04-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7851343B2 (en) * 2007-06-14 2010-12-14 Cree, Inc. Methods of forming ohmic layers through ablation capping layers
US7875532B2 (en) * 2007-06-15 2011-01-25 Semiconductor Energy Laboratory Co., Ltd. Substrate for manufacturing semiconductor device and manufacturing method thereof
US8114722B2 (en) * 2007-08-24 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5311957B2 (ja) * 2007-10-23 2013-10-09 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP5311955B2 (ja) * 2007-11-01 2013-10-09 株式会社半導体エネルギー研究所 表示装置の作製方法
TWI481029B (zh) 2007-12-03 2015-04-11 半導體能源研究所股份有限公司 半導體裝置
KR100932789B1 (ko) * 2007-12-15 2009-12-21 한국전자통신연구원 다중입력 다중출력 시스템에서 ｑｒ 분해 장치 및 그 방법
TWI834207B (zh) 2008-07-31 2024-03-01 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
JP2010056541A (ja) 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TWI450399B (zh) 2008-07-31 2014-08-21 Semiconductor Energy Lab 半導體裝置及其製造方法
US9666719B2 (en) * 2008-07-31 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI500160B (zh) 2008-08-08 2015-09-11 Semiconductor Energy Lab 半導體裝置及其製造方法
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
TWI430441B (zh) * 2009-04-07 2014-03-11 Innolux Corp 影像顯示系統及其製造方法
JP2010245366A (ja) * 2009-04-08 2010-10-28 Fujifilm Corp 電子素子及びその製造方法、並びに表示装置
KR101603768B1 (ko) * 2009-12-22 2016-03-15 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 평판표시장치
KR102114012B1 (ko) 2010-03-05 2020-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
EP2428994A1 (de) 2010-09-10 2012-03-14 Applied Materials, Inc. Verfahren und System zur Abscheidung eines Dünnschichttransistors
US9546416B2 (en) 2010-09-13 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming crystalline oxide semiconductor film
US8546246B2 (en) 2011-01-13 2013-10-01 International Business Machines Corporation Radiation hardened transistors based on graphene and carbon nanotubes
US8878176B2 (en) 2011-08-11 2014-11-04 The Hong Kong University Of Science And Technology Metal-oxide based thin-film transistors with fluorinated active layer
KR101901361B1 (ko) 2011-12-02 2018-09-27 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법 및 이를 이용한 박막 트랜지스터의 형성방법
US8907385B2 (en) 2012-12-27 2014-12-09 Taiwan Semiconductor Manufacturing Company, Ltd. Surface treatment for BSI image sensors
WO2016147529A1 (ja) * 2015-03-16 2016-09-22 富士電機株式会社 半導体装置の製造方法
CN108172625B (zh) * 2016-12-07 2020-09-29 清华大学 一种逻辑电路
CN108470717B (zh) * 2017-02-22 2021-04-06 京东方科技集团股份有限公司 阵列基板及其制备方法、显示面板及显示装置

Family Cites Families (132)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4027380A (en) * 1974-06-03 1977-06-07 Fairchild Camera And Instrument Corporation Complementary insulated gate field effect transistor structure and process for fabricating the structure
US4007294A (en) * 1974-06-06 1977-02-08 Rca Corporation Method of treating a layer of silicon dioxide
US3933530A (en) * 1975-01-28 1976-01-20 Rca Corporation Method of radiation hardening and gettering semiconductor devices
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
DE2558947A1 (de) * 1975-12-29 1977-07-14 Max Planck Gesellschaft Mehrschichtmesselektroden
JPS55163848A (en) 1979-06-06 1980-12-20 Shunpei Yamazaki Manufacture of semiconductor device and its manufacturing device
US4229502A (en) * 1979-08-10 1980-10-21 Rca Corporation Low-resistivity polycrystalline silicon film
JPS5640275A (en) 1979-09-12 1981-04-16 Hitachi Ltd Preparation of semiconductor device
US4309225A (en) * 1979-09-13 1982-01-05 Massachusetts Institute Of Technology Method of crystallizing amorphous material with a moving energy beam
JPS5693375A (en) * 1979-12-26 1981-07-28 Shunpei Yamazaki Photoelectric conversion device
JPS5696877A (en) * 1979-12-30 1981-08-05 Shunpei Yamazaki Photoelectric converter
JPS56160050A (en) * 1980-05-14 1981-12-09 Fujitsu Ltd Semiconductor device and manufacture thereof
GB2081018B (en) 1980-07-31 1985-06-26 Suwa Seikosha Kk Active matrix assembly for display device
JPS57132191A (en) 1981-02-10 1982-08-16 Suwa Seikosha Kk Active matrix substrate
US4330363A (en) * 1980-08-28 1982-05-18 Xerox Corporation Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas
DE3170327D1 (en) 1980-11-06 1985-06-05 Nat Res Dev Annealing process for a thin-film semiconductor device and obtained devices
US4517733A (en) * 1981-01-06 1985-05-21 Fuji Xerox Co., Ltd. Process for fabricating thin film image pick-up element
US4470060A (en) * 1981-01-09 1984-09-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display with vertical non-single crystal semiconductor field effect transistors
JPS57160123A (en) * 1981-03-30 1982-10-02 Hitachi Ltd Semiconductor device
US4459739A (en) * 1981-05-26 1984-07-17 Northern Telecom Limited Thin film transistors
JPS582073A (ja) 1981-06-29 1983-01-07 Sony Corp 電界効果型トランジスタ
GB2107115B (en) * 1981-07-17 1985-05-09 Citizen Watch Co Ltd Method of manufacturing insulated gate thin film effect transitors
JPS5826052A (ja) * 1981-08-06 1983-02-16 Asahi Glass Co Ltd アルカリ拡散防止酸化ケイ素膜付ガラス体
GB2118774B (en) * 1982-02-25 1985-11-27 Sharp Kk Insulated gate thin film transistor
JPS58164268A (ja) 1982-03-25 1983-09-29 Seiko Epson Corp 薄膜シリコントランジスタ
JPS58182816A (ja) 1982-04-20 1983-10-25 Toshiba Corp シリコン系半導体材料の再結晶方法
JPS5940580A (ja) 1982-08-30 1984-03-06 Seiko Epson Corp 半導体集積回路装置の製造方法
DE3331601A1 (de) * 1982-09-02 1984-03-08 Canon K.K., Tokyo Halbleitervorrichtung
JPS59108360A (ja) 1982-12-14 1984-06-22 Mitsubishi Electric Corp 半導体装置
US4619034A (en) 1983-05-02 1986-10-28 Ncr Corporation Method of making laser recrystallized silicon-on-insulator nonvolatile memory device
CA1186070A (en) 1983-06-17 1985-04-23 Iain D. Calder Laser activated polysilicon connections for redundancy
JPS6018913A (ja) * 1983-07-12 1985-01-31 Mitsubishi Electric Corp 半導体装置の製造方法
JPS6043869A (ja) * 1983-08-19 1985-03-08 Semiconductor Energy Lab Co Ltd 半導体装置
JPH0693509B2 (ja) * 1983-08-26 1994-11-16 シャープ株式会社 薄膜トランジスタ
US4599135A (en) * 1983-09-30 1986-07-08 Hitachi, Ltd. Thin film deposition
JPS60105216A (ja) 1983-11-11 1985-06-10 Seiko Instr & Electronics Ltd 薄膜半導体装置の製造方法
US4585395A (en) * 1983-12-12 1986-04-29 General Electric Company Gas turbine engine blade
CA1197628A (en) 1984-01-05 1985-12-03 Thomas W. Macelwee Fabrication of stacked mos devices
JPS60160173A (ja) * 1984-01-30 1985-08-21 Sharp Corp 薄膜トランジスタ
US4698486A (en) 1984-02-28 1987-10-06 Tamarack Scientific Co., Inc. Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
JPS60245174A (ja) * 1984-05-18 1985-12-04 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型電界効果半導体装置の作製方法
US4566913A (en) * 1984-07-30 1986-01-28 International Business Machines Corporation Rapid thermal annealing of silicon dioxide for reduced electron trapping
US4585492A (en) * 1984-07-30 1986-04-29 International Business Machines Corporation Rapid thermal annealing of silicon dioxide for reduced hole trapping
US4680609A (en) * 1984-09-24 1987-07-14 Northern Telecom Limited Structure and fabrication of vertically integrated CMOS logic gates
CA1239706A (en) * 1984-11-26 1988-07-26 Hisao Hayashi Method of forming a thin semiconductor film
JPS61183970A (ja) * 1985-02-08 1986-08-16 Matsushita Electric Ind Co Ltd 薄膜トランジスタ
JPH06101564B2 (ja) 1985-02-27 1994-12-12 株式会社東芝 アモルフアスシリコン半導体装置
US4657616A (en) * 1985-05-17 1987-04-14 Benzing Technologies, Inc. In-situ CVD chamber cleaner
US4882295A (en) * 1985-07-26 1989-11-21 Energy Conversion Devices, Inc. Method of making a double injection field effect transistor
JPS6230379A (ja) 1985-07-31 1987-02-09 Seiko Epson Corp 薄膜トランジスタ
JPH073824B2 (ja) * 1985-08-14 1995-01-18 ソニー株式会社 半導体装置の製造方法
JPH0810668B2 (ja) 1985-10-31 1996-01-31 旭硝子株式会社 多結晶シリコン膜の製造方法
JPS62104171A (ja) 1985-10-31 1987-05-14 Fujitsu Ltd 薄膜トランジスタの製造方法
JPS62119974A (ja) 1985-11-19 1987-06-01 Sharp Corp 薄膜トランジスタの製造方法
US4698638A (en) * 1985-12-26 1987-10-06 General Dynamics, Pomona Division Dual mode target seeking system
JPH0746729B2 (ja) 1985-12-26 1995-05-17 キヤノン株式会社 薄膜トランジスタの製造方法
JPS62171160A (ja) 1986-01-22 1987-07-28 Sharp Corp 薄膜トランジスタ
JPS62211165A (ja) * 1986-03-13 1987-09-17 Ushio Inc マ−キング方法
JPS62244165A (ja) * 1986-04-16 1987-10-24 Nec Corp 半導体装置の製造方法
JPS62254466A (ja) 1986-04-28 1987-11-06 Seiko Instr & Electronics Ltd 薄膜半導体装置の製造方法
JPS62285469A (ja) * 1986-06-04 1987-12-11 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS62285470A (ja) * 1986-06-04 1987-12-11 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS62286282A (ja) 1986-06-05 1987-12-12 Ricoh Co Ltd 薄膜トランジスタの製造方法
JPS63164A (ja) 1986-06-19 1988-01-05 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法
JPS6310573A (ja) 1986-07-02 1988-01-18 Oki Electric Ind Co Ltd 半導体装置の製造方法
US4851363A (en) * 1986-07-11 1989-07-25 General Motors Corporation Fabrication of polysilicon fets on alkaline earth alumino-silicate glasses
JP2572379B2 (ja) 1986-07-31 1997-01-16 株式会社日立製作所 薄膜トランジスタの製造方法
US4786352A (en) * 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning
US4915772A (en) * 1986-10-01 1990-04-10 Corning Incorporated Capping layer for recrystallization process
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
JPH0680685B2 (ja) 1986-12-29 1994-10-12 日本電気株式会社 薄膜トランジスタとその製造方法
JPS63172470A (ja) 1987-01-12 1988-07-16 Fujitsu Ltd 薄膜トランジスタ
US4748131A (en) * 1987-02-06 1988-05-31 The Aerospace Corporation Method for increasing radiation hardness of MOS gate oxides
US5238705A (en) * 1987-02-24 1993-08-24 Semiconductor Energy Laboratory Co., Ltd. Carbonaceous protective films and method of depositing the same
US4785962A (en) * 1987-04-20 1988-11-22 Applied Materials, Inc. Vacuum chamber slit valve
JPS63301518A (ja) 1987-05-30 1988-12-08 Canon Inc 堆積膜形成方法
JPS6435959A (en) * 1987-07-30 1989-02-07 Ricoh Kk Thin film transistor
JP2501451B2 (ja) 1987-08-10 1996-05-29 日本電信電話株式会社 薄膜トランジスタ及びその製造方法
GB8721193D0 (en) * 1987-09-09 1987-10-14 Wright S W Semiconductor devices
JP2623276B2 (ja) * 1988-01-22 1997-06-25 株式会社日立製作所 薄膜半導体装置の製造方法
JP2638868B2 (ja) 1988-01-22 1997-08-06 セイコーエプソン株式会社 半導体装置の製造方法
US4960719A (en) * 1988-02-04 1990-10-02 Seikosha Co., Ltd. Method for producing amorphous silicon thin film transistor array substrate
JPH01209764A (ja) * 1988-02-18 1989-08-23 Stanley Electric Co Ltd 薄膜トランジスタとその製法
GB2215126B (en) * 1988-02-19 1990-11-14 Gen Electric Co Plc Process for manufacturing a thin film transistor
US4998152A (en) 1988-03-22 1991-03-05 International Business Machines Corporation Thin film transistor
JPH01268064A (ja) 1988-04-20 1989-10-25 Hitachi Ltd 多結晶シリコン薄膜の形成方法
JPH0758788B2 (ja) * 1988-05-10 1995-06-21 日本電気株式会社 電界効果トランジスタの製造方法
JPH01287964A (ja) 1988-05-13 1989-11-20 Seiko Epson Corp 半導体装置の製造方法
JPH01313943A (ja) 1988-06-13 1989-12-19 Nippon Telegr & Teleph Corp <Ntt> 絶縁薄膜および絶縁薄膜の形成方法
US4849081A (en) * 1988-06-22 1989-07-18 The Boc Group, Inc. Formation of oxide films by reactive sputtering
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
JP2600827B2 (ja) 1988-07-23 1997-04-16 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JP3017742B2 (ja) * 1988-09-13 2000-03-13 ソニー株式会社 半導体装置
JP2624797B2 (ja) * 1988-09-20 1997-06-25 株式会社日立製作所 アクティブマトリクス基板の製造方法
JPH0290568A (ja) * 1988-09-28 1990-03-30 Nippon Telegr & Teleph Corp <Ntt> 薄膜トランジスタの製造方法
JP2880175B2 (ja) * 1988-11-30 1999-04-05 株式会社日立製作所 レーザアニール方法及び薄膜半導体装置
US5108843A (en) * 1988-11-30 1992-04-28 Ricoh Company, Ltd. Thin film semiconductor and process for producing the same
US5076666A (en) * 1988-12-06 1991-12-31 Sharp Kabushiki Kaisha Active matrix display apparatus with drain electrode extensions
JP2626910B2 (ja) * 1988-12-12 1997-07-02 日本電信電話株式会社 半導体装置の製造方法
US5180690A (en) * 1988-12-14 1993-01-19 Energy Conversion Devices, Inc. Method of forming a layer of doped crystalline semiconductor alloy material
JP2734587B2 (ja) 1988-12-28 1998-03-30 ソニー株式会社 薄膜トランジスタの製造方法
JPH0644625B2 (ja) * 1988-12-31 1994-06-08 三星電子株式会社 アクティブマトリックス液晶表示素子用薄膜トランジスタ
JPH02211637A (ja) * 1989-02-13 1990-08-22 Nippon Telegr & Teleph Corp <Ntt> 薄膜トランジスタの製造方法
JPH02303030A (ja) * 1989-05-17 1990-12-17 Hitachi Ltd 半導体装置の製造方法
JPH02310932A (ja) 1989-05-25 1990-12-26 Nec Corp 逆スタガー型薄膜トランジスタの製造方法
JP2558351B2 (ja) 1989-06-29 1996-11-27 沖電気工業株式会社 アクティブマトリクス表示パネル
DE69027590T2 (de) * 1989-08-01 1996-12-05 Asahi Glass Co Ltd Verfahren zur Herstellung von Schichten auf basis von Siliziumdioxyd mittels DC Sputtern und Target dafür
JPH0377329A (ja) 1989-08-19 1991-04-02 Fujitsu Ltd 半導体装置の製造方法
JPH0391932A (ja) 1989-09-04 1991-04-17 Canon Inc 半導体装置の製造方法
US5278093A (en) 1989-09-23 1994-01-11 Canon Kabushiki Kaisha Method for forming semiconductor thin film
JP2857900B2 (ja) 1989-12-28 1999-02-17 カシオ計算機株式会社 薄膜トランジスタの製造方法
JPH03277774A (ja) * 1990-03-27 1991-12-09 Semiconductor Energy Lab Co Ltd 光気相反応装置
US5233191A (en) * 1990-04-02 1993-08-03 Hitachi, Ltd. Method and apparatus of inspecting foreign matters during mass production start-up and mass production line in semiconductor production process
US5198379A (en) 1990-04-27 1993-03-30 Sharp Kabushiki Kaisha Method of making a MOS thin film transistor with self-aligned asymmetrical structure
DE59103151D1 (de) 1990-05-26 1994-11-10 Bayer Ag Lactamschmelzen mit erhöhter Viskosität und ihre Verwendung.
DE69125886T2 (de) * 1990-05-29 1997-11-20 Semiconductor Energy Lab Dünnfilmtransistoren
JP2796175B2 (ja) 1990-06-05 1998-09-10 松下電器産業株式会社 薄膜トランジスターの製造方法
JPH0442579A (ja) 1990-06-08 1992-02-13 Seiko Epson Corp 薄膜トランジスタ及び製造方法
US5514879A (en) * 1990-11-20 1996-05-07 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
KR950001360B1 (ko) * 1990-11-26 1995-02-17 가부시키가이샤 한도오따이 에네루기 겐큐쇼 전기 광학장치와 그 구동방법
US5420048A (en) 1991-01-09 1995-05-30 Canon Kabushiki Kaisha Manufacturing method for SOI-type thin film transistor
EP0502471A3 (en) 1991-03-05 1995-10-11 Fujitsu Ltd Intrinsic gettering of a silicon substrate
JPH05182923A (ja) 1991-05-28 1993-07-23 Semiconductor Energy Lab Co Ltd レーザーアニール方法
JPH04360580A (ja) 1991-06-07 1992-12-14 Casio Comput Co Ltd 電界効果型トランジスタおよびその製造方法
JP3466633B2 (ja) 1991-06-12 2003-11-17 ソニー株式会社 多結晶半導体層のアニール方法
JP2722890B2 (ja) 1991-10-01 1998-03-09 日本電気株式会社 薄膜トランジスタおよびその製造方法
JP3173854B2 (ja) 1992-03-25 2001-06-04 株式会社半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置の作製方法及び作成された半導体装置
TW357415B (en) 1993-07-27 1999-05-01 Semiconductor Engrgy Lab Semiconductor device and process for fabricating the same
JP3173926B2 (ja) 1993-08-12 2001-06-04 株式会社半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置の作製方法及びその半導体装置
US5996011A (en) * 1997-03-25 1999-11-30 Unified Research Laboratories, Inc. System and method for filtering data received by a computer system
US7097716B2 (en) * 2002-10-17 2006-08-29 Applied Materials, Inc. Method for performing fluorocarbon chamber cleaning to eliminate fluorine memory effect

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US7355202B2 (en) 2008-04-08
US6607947B1 (en) 2003-08-19
EP0459763B1 (de) 1997-05-02
US5523240A (en) 1996-06-04
US20090101910A1 (en) 2009-04-23
US5313075A (en) 1994-05-17
DE69125886T2 (de) 1997-11-20
US20040031961A1 (en) 2004-02-19

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