JPS57132191A - Active matrix substrate - Google Patents
Active matrix substrateInfo
- Publication number
- JPS57132191A JPS57132191A JP56018228A JP1822881A JPS57132191A JP S57132191 A JPS57132191 A JP S57132191A JP 56018228 A JP56018228 A JP 56018228A JP 1822881 A JP1822881 A JP 1822881A JP S57132191 A JPS57132191 A JP S57132191A
- Authority
- JP
- Japan
- Prior art keywords
- active matrix
- matrix substrate
- substrate
- active
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56018228A JPS57132191A (en) | 1981-02-10 | 1981-02-10 | Active matrix substrate |
GB8123089A GB2081018B (en) | 1980-07-31 | 1981-07-27 | Active matrix assembly for display device |
FR8114639A FR2488013A1 (en) | 1980-07-31 | 1981-07-28 | ACTIVE MATRIX MATRIX DEVICE |
US06/288,605 US4582395A (en) | 1980-07-31 | 1981-07-30 | Active matrix assembly for a liquid crystal display device including an insulated-gate-transistor |
DE19813130407 DE3130407A1 (en) | 1980-07-31 | 1981-07-31 | ACTIVE MATRIX ARRANGEMENT FOR A DISPLAY DEVICE |
HK888/87A HK88887A (en) | 1980-07-31 | 1987-11-26 | Liquid crystal display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56018228A JPS57132191A (en) | 1981-02-10 | 1981-02-10 | Active matrix substrate |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61255019A Division JPS62148929A (en) | 1986-10-27 | 1986-10-27 | Liquid crystal display device |
JP61255018A Division JPS62148928A (en) | 1986-10-27 | 1986-10-27 | Liquid crystal display device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57132191A true JPS57132191A (en) | 1982-08-16 |
JPH0133833B2 JPH0133833B2 (en) | 1989-07-14 |
Family
ID=11965798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56018228A Granted JPS57132191A (en) | 1980-07-31 | 1981-02-10 | Active matrix substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57132191A (en) |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6052892A (en) * | 1983-09-01 | 1985-03-26 | セイコーエプソン株式会社 | Liquid crystal image display unit |
JPS60235120A (en) * | 1984-05-08 | 1985-11-21 | Canon Inc | Driving method of transistor |
JPS62148929A (en) * | 1986-10-27 | 1987-07-02 | Seiko Epson Corp | Liquid crystal display device |
JPS63170682A (en) * | 1986-10-03 | 1988-07-14 | セイコーエプソン株式会社 | Active matrix circuit board |
JPS63307431A (en) * | 1987-06-10 | 1988-12-15 | Hitachi Ltd | Thin film semiconductor display device |
JPS63307776A (en) * | 1987-06-10 | 1988-12-15 | Hitachi Ltd | Thin-film semiconductor device and manufacture thereof |
JPH0244317A (en) * | 1988-08-05 | 1990-02-14 | Hitachi Ltd | Liquid crystal display device with auxiliary capacity |
JPH06342272A (en) * | 1994-05-09 | 1994-12-13 | Seiko Epson Corp | Liquid crystal display device |
JPH07202215A (en) * | 1994-12-05 | 1995-08-04 | Hitachi Ltd | Thin-film semiconductor device and manufacture thereof |
JPH08190366A (en) * | 1995-10-06 | 1996-07-23 | Seiko Epson Corp | Active matrix substrate |
US5554861A (en) * | 1982-04-13 | 1996-09-10 | Seiko Epson Corporation | Thin film transistors and active matrices including the same |
JPH09171374A (en) * | 1996-09-02 | 1997-06-30 | Seiko Epson Corp | Active matrix substrate |
US5698864A (en) * | 1982-04-13 | 1997-12-16 | Seiko Epson Corporation | Method of manufacturing a liquid crystal device having field effect transistors |
US5726720A (en) * | 1995-03-06 | 1998-03-10 | Canon Kabushiki Kaisha | Liquid crystal display apparatus in which an insulating layer between the source and substrate is thicker than the insulating layer between the drain and substrate |
US5736751A (en) * | 1982-04-13 | 1998-04-07 | Seiko Epson Corporation | Field effect transistor having thick source and drain regions |
US6607947B1 (en) | 1990-05-29 | 2003-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device with fluorinated layer for blocking alkali ions |
US6727522B1 (en) | 1998-11-17 | 2004-04-27 | Japan Science And Technology Corporation | Transistor and semiconductor device |
US7362139B2 (en) | 2001-07-30 | 2008-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2009025822A (en) * | 1998-03-27 | 2009-02-05 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4661935B2 (en) | 2008-10-15 | 2011-03-30 | ソニー株式会社 | Liquid crystal display device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55518A (en) * | 1978-06-14 | 1980-01-05 | Suwa Seikosha Kk | Liquid crystal display unit |
JPS552266A (en) * | 1978-06-20 | 1980-01-09 | Matsushita Electric Ind Co Ltd | Image display unit |
-
1981
- 1981-02-10 JP JP56018228A patent/JPS57132191A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55518A (en) * | 1978-06-14 | 1980-01-05 | Suwa Seikosha Kk | Liquid crystal display unit |
JPS552266A (en) * | 1978-06-20 | 1980-01-09 | Matsushita Electric Ind Co Ltd | Image display unit |
Cited By (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5554861A (en) * | 1982-04-13 | 1996-09-10 | Seiko Epson Corporation | Thin film transistors and active matrices including the same |
US6294796B1 (en) | 1982-04-13 | 2001-09-25 | Seiko Epson Corporation | Thin film transistors and active matrices including same |
US6242777B1 (en) | 1982-04-13 | 2001-06-05 | Seiko Epson Corporation | Field effect transistor and liquid crystal devices including the same |
US5736751A (en) * | 1982-04-13 | 1998-04-07 | Seiko Epson Corporation | Field effect transistor having thick source and drain regions |
US5698864A (en) * | 1982-04-13 | 1997-12-16 | Seiko Epson Corporation | Method of manufacturing a liquid crystal device having field effect transistors |
JPH0522917B2 (en) * | 1983-09-01 | 1993-03-31 | Seiko Epson Corp | |
JPS6052892A (en) * | 1983-09-01 | 1985-03-26 | セイコーエプソン株式会社 | Liquid crystal image display unit |
JPS60235120A (en) * | 1984-05-08 | 1985-11-21 | Canon Inc | Driving method of transistor |
JPS63170682A (en) * | 1986-10-03 | 1988-07-14 | セイコーエプソン株式会社 | Active matrix circuit board |
JPS62148929A (en) * | 1986-10-27 | 1987-07-02 | Seiko Epson Corp | Liquid crystal display device |
JPS63307776A (en) * | 1987-06-10 | 1988-12-15 | Hitachi Ltd | Thin-film semiconductor device and manufacture thereof |
JPS63307431A (en) * | 1987-06-10 | 1988-12-15 | Hitachi Ltd | Thin film semiconductor display device |
JPH0571193B2 (en) * | 1987-06-10 | 1993-10-06 | Hitachi Ltd | |
JPH0244317A (en) * | 1988-08-05 | 1990-02-14 | Hitachi Ltd | Liquid crystal display device with auxiliary capacity |
US7355202B2 (en) | 1990-05-29 | 2008-04-08 | Semiconductor Energy Co., Ltd. | Thin-film transistor |
US6607947B1 (en) | 1990-05-29 | 2003-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device with fluorinated layer for blocking alkali ions |
JPH06342272A (en) * | 1994-05-09 | 1994-12-13 | Seiko Epson Corp | Liquid crystal display device |
JPH07202215A (en) * | 1994-12-05 | 1995-08-04 | Hitachi Ltd | Thin-film semiconductor device and manufacture thereof |
US5726720A (en) * | 1995-03-06 | 1998-03-10 | Canon Kabushiki Kaisha | Liquid crystal display apparatus in which an insulating layer between the source and substrate is thicker than the insulating layer between the drain and substrate |
JPH08190366A (en) * | 1995-10-06 | 1996-07-23 | Seiko Epson Corp | Active matrix substrate |
JPH09171374A (en) * | 1996-09-02 | 1997-06-30 | Seiko Epson Corp | Active matrix substrate |
US9262978B2 (en) | 1998-03-27 | 2016-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Driving circuit of a semiconductor display device and the semiconductor display device |
JP2009025822A (en) * | 1998-03-27 | 2009-02-05 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
KR100436654B1 (en) * | 1998-11-17 | 2004-06-22 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | Transistor and Semiconductor Device |
US7064346B2 (en) | 1998-11-17 | 2006-06-20 | Japan Science And Technology Agency | Transistor and semiconductor device |
US6727522B1 (en) | 1998-11-17 | 2004-04-27 | Japan Science And Technology Corporation | Transistor and semiconductor device |
US7362139B2 (en) | 2001-07-30 | 2008-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
USRE41215E1 (en) | 2001-07-30 | 2010-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
USRE43401E1 (en) | 2001-07-30 | 2012-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
USRE44657E1 (en) | 2001-07-30 | 2013-12-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0133833B2 (en) | 1989-07-14 |
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