JPS57132191A - Active matrix substrate - Google Patents

Active matrix substrate

Info

Publication number
JPS57132191A
JPS57132191A JP56018228A JP1822881A JPS57132191A JP S57132191 A JPS57132191 A JP S57132191A JP 56018228 A JP56018228 A JP 56018228A JP 1822881 A JP1822881 A JP 1822881A JP S57132191 A JPS57132191 A JP S57132191A
Authority
JP
Japan
Prior art keywords
active matrix
matrix substrate
substrate
active
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56018228A
Other languages
Japanese (ja)
Other versions
JPH0133833B2 (en
Inventor
Shinji Morozumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suwa Seikosha KK
Original Assignee
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suwa Seikosha KK filed Critical Suwa Seikosha KK
Priority to JP56018228A priority Critical patent/JPS57132191A/en
Priority to GB8123089A priority patent/GB2081018B/en
Priority to FR8114639A priority patent/FR2488013A1/en
Priority to US06/288,605 priority patent/US4582395A/en
Priority to DE19813130407 priority patent/DE3130407A1/en
Publication of JPS57132191A publication Critical patent/JPS57132191A/en
Priority to HK888/87A priority patent/HK88887A/en
Publication of JPH0133833B2 publication Critical patent/JPH0133833B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP56018228A 1980-07-31 1981-02-10 Active matrix substrate Granted JPS57132191A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP56018228A JPS57132191A (en) 1981-02-10 1981-02-10 Active matrix substrate
GB8123089A GB2081018B (en) 1980-07-31 1981-07-27 Active matrix assembly for display device
FR8114639A FR2488013A1 (en) 1980-07-31 1981-07-28 ACTIVE MATRIX MATRIX DEVICE
US06/288,605 US4582395A (en) 1980-07-31 1981-07-30 Active matrix assembly for a liquid crystal display device including an insulated-gate-transistor
DE19813130407 DE3130407A1 (en) 1980-07-31 1981-07-31 ACTIVE MATRIX ARRANGEMENT FOR A DISPLAY DEVICE
HK888/87A HK88887A (en) 1980-07-31 1987-11-26 Liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56018228A JPS57132191A (en) 1981-02-10 1981-02-10 Active matrix substrate

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP61255019A Division JPS62148929A (en) 1986-10-27 1986-10-27 Liquid crystal display device
JP61255018A Division JPS62148928A (en) 1986-10-27 1986-10-27 Liquid crystal display device

Publications (2)

Publication Number Publication Date
JPS57132191A true JPS57132191A (en) 1982-08-16
JPH0133833B2 JPH0133833B2 (en) 1989-07-14

Family

ID=11965798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56018228A Granted JPS57132191A (en) 1980-07-31 1981-02-10 Active matrix substrate

Country Status (1)

Country Link
JP (1) JPS57132191A (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6052892A (en) * 1983-09-01 1985-03-26 セイコーエプソン株式会社 Liquid crystal image display unit
JPS60235120A (en) * 1984-05-08 1985-11-21 Canon Inc Driving method of transistor
JPS62148929A (en) * 1986-10-27 1987-07-02 Seiko Epson Corp Liquid crystal display device
JPS63170682A (en) * 1986-10-03 1988-07-14 セイコーエプソン株式会社 Active matrix circuit board
JPS63307431A (en) * 1987-06-10 1988-12-15 Hitachi Ltd Thin film semiconductor display device
JPS63307776A (en) * 1987-06-10 1988-12-15 Hitachi Ltd Thin-film semiconductor device and manufacture thereof
JPH0244317A (en) * 1988-08-05 1990-02-14 Hitachi Ltd Liquid crystal display device with auxiliary capacity
JPH06342272A (en) * 1994-05-09 1994-12-13 Seiko Epson Corp Liquid crystal display device
JPH07202215A (en) * 1994-12-05 1995-08-04 Hitachi Ltd Thin-film semiconductor device and manufacture thereof
JPH08190366A (en) * 1995-10-06 1996-07-23 Seiko Epson Corp Active matrix substrate
US5554861A (en) * 1982-04-13 1996-09-10 Seiko Epson Corporation Thin film transistors and active matrices including the same
JPH09171374A (en) * 1996-09-02 1997-06-30 Seiko Epson Corp Active matrix substrate
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
US5726720A (en) * 1995-03-06 1998-03-10 Canon Kabushiki Kaisha Liquid crystal display apparatus in which an insulating layer between the source and substrate is thicker than the insulating layer between the drain and substrate
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US6607947B1 (en) 1990-05-29 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device with fluorinated layer for blocking alkali ions
US6727522B1 (en) 1998-11-17 2004-04-27 Japan Science And Technology Corporation Transistor and semiconductor device
US7362139B2 (en) 2001-07-30 2008-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2009025822A (en) * 1998-03-27 2009-02-05 Semiconductor Energy Lab Co Ltd Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4661935B2 (en) 2008-10-15 2011-03-30 ソニー株式会社 Liquid crystal display device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55518A (en) * 1978-06-14 1980-01-05 Suwa Seikosha Kk Liquid crystal display unit
JPS552266A (en) * 1978-06-20 1980-01-09 Matsushita Electric Ind Co Ltd Image display unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55518A (en) * 1978-06-14 1980-01-05 Suwa Seikosha Kk Liquid crystal display unit
JPS552266A (en) * 1978-06-20 1980-01-09 Matsushita Electric Ind Co Ltd Image display unit

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5554861A (en) * 1982-04-13 1996-09-10 Seiko Epson Corporation Thin film transistors and active matrices including the same
US6294796B1 (en) 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
US6242777B1 (en) 1982-04-13 2001-06-05 Seiko Epson Corporation Field effect transistor and liquid crystal devices including the same
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
JPH0522917B2 (en) * 1983-09-01 1993-03-31 Seiko Epson Corp
JPS6052892A (en) * 1983-09-01 1985-03-26 セイコーエプソン株式会社 Liquid crystal image display unit
JPS60235120A (en) * 1984-05-08 1985-11-21 Canon Inc Driving method of transistor
JPS63170682A (en) * 1986-10-03 1988-07-14 セイコーエプソン株式会社 Active matrix circuit board
JPS62148929A (en) * 1986-10-27 1987-07-02 Seiko Epson Corp Liquid crystal display device
JPS63307776A (en) * 1987-06-10 1988-12-15 Hitachi Ltd Thin-film semiconductor device and manufacture thereof
JPS63307431A (en) * 1987-06-10 1988-12-15 Hitachi Ltd Thin film semiconductor display device
JPH0571193B2 (en) * 1987-06-10 1993-10-06 Hitachi Ltd
JPH0244317A (en) * 1988-08-05 1990-02-14 Hitachi Ltd Liquid crystal display device with auxiliary capacity
US7355202B2 (en) 1990-05-29 2008-04-08 Semiconductor Energy Co., Ltd. Thin-film transistor
US6607947B1 (en) 1990-05-29 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device with fluorinated layer for blocking alkali ions
JPH06342272A (en) * 1994-05-09 1994-12-13 Seiko Epson Corp Liquid crystal display device
JPH07202215A (en) * 1994-12-05 1995-08-04 Hitachi Ltd Thin-film semiconductor device and manufacture thereof
US5726720A (en) * 1995-03-06 1998-03-10 Canon Kabushiki Kaisha Liquid crystal display apparatus in which an insulating layer between the source and substrate is thicker than the insulating layer between the drain and substrate
JPH08190366A (en) * 1995-10-06 1996-07-23 Seiko Epson Corp Active matrix substrate
JPH09171374A (en) * 1996-09-02 1997-06-30 Seiko Epson Corp Active matrix substrate
US9262978B2 (en) 1998-03-27 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Driving circuit of a semiconductor display device and the semiconductor display device
JP2009025822A (en) * 1998-03-27 2009-02-05 Semiconductor Energy Lab Co Ltd Semiconductor device
KR100436654B1 (en) * 1998-11-17 2004-06-22 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 Transistor and Semiconductor Device
US7064346B2 (en) 1998-11-17 2006-06-20 Japan Science And Technology Agency Transistor and semiconductor device
US6727522B1 (en) 1998-11-17 2004-04-27 Japan Science And Technology Corporation Transistor and semiconductor device
US7362139B2 (en) 2001-07-30 2008-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
USRE41215E1 (en) 2001-07-30 2010-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
USRE43401E1 (en) 2001-07-30 2012-05-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
USRE44657E1 (en) 2001-07-30 2013-12-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
JPH0133833B2 (en) 1989-07-14

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