JP3729955B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP3729955B2
JP3729955B2 JP33515296A JP33515296A JP3729955B2 JP 3729955 B2 JP3729955 B2 JP 3729955B2 JP 33515296 A JP33515296 A JP 33515296A JP 33515296 A JP33515296 A JP 33515296A JP 3729955 B2 JP3729955 B2 JP 3729955B2
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Japan
Prior art keywords
film
oxide film
silicon film
crystalline silicon
thermal oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP33515296A
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English (en)
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JPH09312260A (ja
Inventor
久 大谷
聡 寺本
潤 小山
靖 尾形
舜平 山崎
昌彦 早川
敏次 浜谷
光明 納
Original Assignee
株式会社半導体エネルギー研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority to JP2621096 priority Critical
Priority to JP8-26210 priority
Priority to JP8-26037 priority
Priority to JP2603796 priority
Priority to JP3287596 priority
Priority to JP8-32874 priority
Priority to JP3287496 priority
Priority to JP8-32875 priority
Priority to JP3298196 priority
Priority to JP8-32981 priority
Priority to JP8-58334 priority
Priority to JP5833496 priority
Priority to JP8-88759 priority
Priority to JP8875996 priority
Priority to JP33515296A priority patent/JP3729955B2/ja
Application filed by 株式会社半導体エネルギー研究所 filed Critical 株式会社半導体エネルギー研究所
Priority claimed from TW085116281A external-priority patent/TW336327B/zh
Publication of JPH09312260A publication Critical patent/JPH09312260A/ja
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Publication of JP3729955B2 publication Critical patent/JP3729955B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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