DE69128876T2 - Dünnfilm-Halbleitervorrichtung - Google Patents
Dünnfilm-HalbleitervorrichtungInfo
- Publication number
- DE69128876T2 DE69128876T2 DE69128876T DE69128876T DE69128876T2 DE 69128876 T2 DE69128876 T2 DE 69128876T2 DE 69128876 T DE69128876 T DE 69128876T DE 69128876 T DE69128876 T DE 69128876T DE 69128876 T2 DE69128876 T2 DE 69128876T2
- Authority
- DE
- Germany
- Prior art keywords
- thin film
- semiconductor device
- film semiconductor
- thin
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2338880A JP2846736B2 (ja) | 1990-11-30 | 1990-11-30 | 薄膜半導体装置 |
JP2338879A JPH04206971A (ja) | 1990-11-30 | 1990-11-30 | 薄膜半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69128876D1 DE69128876D1 (de) | 1998-03-12 |
DE69128876T2 true DE69128876T2 (de) | 1998-08-06 |
Family
ID=26576245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69128876T Expired - Lifetime DE69128876T2 (de) | 1990-11-30 | 1991-11-29 | Dünnfilm-Halbleitervorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5528056A (de) |
EP (1) | EP0488801B1 (de) |
KR (1) | KR950003943B1 (de) |
DE (1) | DE69128876T2 (de) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3556679B2 (ja) * | 1992-05-29 | 2004-08-18 | 株式会社半導体エネルギー研究所 | 電気光学装置 |
US6713783B1 (en) | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
JP2873632B2 (ja) * | 1991-03-15 | 1999-03-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US6975296B1 (en) * | 1991-06-14 | 2005-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
JP3254007B2 (ja) | 1992-06-09 | 2002-02-04 | 株式会社半導体エネルギー研究所 | 薄膜状半導体装置およびその作製方法 |
EP0582486A2 (de) * | 1992-08-07 | 1994-02-09 | Sharp Kabushiki Kaisha | Dünnschicht-Transistor-Paar und Verfahren zu seiner Herstellung |
TW232751B (en) * | 1992-10-09 | 1994-10-21 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for forming the same |
US6624477B1 (en) * | 1992-10-09 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US6777763B1 (en) | 1993-10-01 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
JP3030368B2 (ja) | 1993-10-01 | 2000-04-10 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
US6337232B1 (en) | 1995-06-07 | 2002-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabrication of a crystalline silicon thin film semiconductor with a thin channel region |
JPH08213409A (ja) * | 1995-02-06 | 1996-08-20 | Nec Corp | 半導体装置 |
JP3768260B2 (ja) * | 1995-02-07 | 2006-04-19 | 株式会社半導体エネルギー研究所 | トランスファゲイト回路 |
JP3256110B2 (ja) * | 1995-09-28 | 2002-02-12 | シャープ株式会社 | 液晶表示装置 |
JPH10154816A (ja) * | 1996-11-21 | 1998-06-09 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
KR100223832B1 (ko) * | 1996-12-27 | 1999-10-15 | 구본준 | 반도체 소자 및 그 제조방법 |
US5923981A (en) * | 1996-12-31 | 1999-07-13 | Intel Corporation | Cascading transistor gate and method for fabricating the same |
JP3353875B2 (ja) * | 1997-01-20 | 2002-12-03 | シャープ株式会社 | Soi・mos電界効果トランジスタ |
US5821564A (en) * | 1997-05-23 | 1998-10-13 | Mosel Vitelic Inc. | TFT with self-align offset gate |
US5866445A (en) * | 1997-07-11 | 1999-02-02 | Texas Instruments Incorporated | High density CMOS circuit with split gate oxide |
US6140160A (en) | 1997-07-28 | 2000-10-31 | Micron Technology, Inc. | Method for fabricating a simplified CMOS polysilicon thin film transistor and resulting structure |
US6020222A (en) * | 1997-12-16 | 2000-02-01 | Advanced Micro Devices, Inc. | Silicon oxide insulator (SOI) semiconductor having selectively linked body |
US6118157A (en) * | 1998-03-18 | 2000-09-12 | National Semiconductor Corporation | High voltage split gate CMOS transistors built in standard 2-poly core CMOS |
US6593592B1 (en) * | 1999-01-29 | 2003-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having thin film transistors |
US6201267B1 (en) | 1999-03-01 | 2001-03-13 | Rensselaer Polytechnic Institute | Compact low power complement FETs |
US7122835B1 (en) * | 1999-04-07 | 2006-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Electrooptical device and a method of manufacturing the same |
US6512504B1 (en) | 1999-04-27 | 2003-01-28 | Semiconductor Energy Laborayory Co., Ltd. | Electronic device and electronic apparatus |
US8853696B1 (en) * | 1999-06-04 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
JP5210473B2 (ja) | 1999-06-21 | 2013-06-12 | 株式会社半導体エネルギー研究所 | 表示装置 |
GB2358082B (en) * | 2000-01-07 | 2003-11-12 | Seiko Epson Corp | Semiconductor transistor |
TWI291729B (en) | 2001-11-22 | 2007-12-21 | Semiconductor Energy Lab | A semiconductor fabricating apparatus |
US6979605B2 (en) * | 2001-11-30 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for a semiconductor device using a marker on an amorphous semiconductor film to selectively crystallize a region with a laser light |
US7133737B2 (en) | 2001-11-30 | 2006-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer |
US7214573B2 (en) * | 2001-12-11 | 2007-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device that includes patterning sub-islands |
JP3992976B2 (ja) | 2001-12-21 | 2007-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4030758B2 (ja) | 2001-12-28 | 2008-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7214991B2 (en) * | 2002-12-06 | 2007-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS inverters configured using multiple-gate transistors |
TW595005B (en) * | 2003-08-04 | 2004-06-21 | Au Optronics Corp | Thin film transistor and pixel structure with the same |
JP4348644B2 (ja) * | 2006-09-26 | 2009-10-21 | セイコーエプソン株式会社 | 薄膜トランジスタ、電気光学装置および電子機器 |
US20090072313A1 (en) * | 2007-09-19 | 2009-03-19 | International Business Machines Corporation | Hardened transistors in soi devices |
US7692972B1 (en) | 2008-07-22 | 2010-04-06 | Actel Corporation | Split gate memory cell for programmable circuit device |
US8723260B1 (en) * | 2009-03-12 | 2014-05-13 | Rf Micro Devices, Inc. | Semiconductor radio frequency switch with body contact |
US8890256B2 (en) * | 2009-03-20 | 2014-11-18 | International Business Machines Corporation | Structure for heavy ion tolerant device, method of manufacturing the same and structure thereof |
JP2012064854A (ja) * | 2010-09-17 | 2012-03-29 | Toshiba Corp | 半導体装置 |
JP6283191B2 (ja) | 2012-10-17 | 2018-02-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2016118183A1 (en) | 2015-01-24 | 2016-07-28 | Schober Susan Marya | Passive phased injection locked circuit |
EP3329598A4 (de) | 2015-07-29 | 2019-07-31 | Circuit Seed, LLC | Komplementäre stromfeldeffekttransistorvorrichtungen und verstärker |
WO2017019978A1 (en) | 2015-07-30 | 2017-02-02 | Circuit Seed, Llc | Low noise trans-impedance amplifiers based on complementary current field-effect transistor devices |
US10491177B2 (en) | 2015-07-30 | 2019-11-26 | Circuit Seed, Llc | Multi-stage and feed forward compensated complementary current field effect transistor amplifiers |
US10514716B2 (en) | 2015-07-30 | 2019-12-24 | Circuit Seed, Llc | Reference generator and current source transistor based on complementary current field-effect transistor devices |
CA3043989A1 (en) | 2015-12-14 | 2017-06-22 | Circuit Seed, Llc | Super-saturation current field effect transistor and trans-impedance mos device |
TWI668617B (zh) | 2018-08-17 | 2019-08-11 | 友達光電股份有限公司 | 非矩形之異形觸控裝置 |
CN113823680A (zh) * | 2021-01-21 | 2021-12-21 | 山东大学 | 一种新型的AlGaN/GaN异质结场效应晶体管及应用 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5413779A (en) * | 1977-07-04 | 1979-02-01 | Toshiba Corp | Semiconductor integrated circuit device |
JPS56164568A (en) * | 1980-05-22 | 1981-12-17 | Toshiba Corp | Semiconductor device |
JPS6051272B2 (ja) * | 1982-05-31 | 1985-11-13 | 株式会社東芝 | 積層型cmosインバ−タ装置 |
JPS62229873A (ja) * | 1986-03-29 | 1987-10-08 | Hitachi Ltd | 薄膜半導体装置の製造方法 |
JP2802618B2 (ja) * | 1987-03-26 | 1998-09-24 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
JPH0714009B2 (ja) * | 1987-10-15 | 1995-02-15 | 日本電気株式会社 | Mos型半導体記憶回路装置 |
KR900005354B1 (ko) * | 1987-12-31 | 1990-07-27 | 삼성전자 주식회사 | Hct 반도체 장치의 제조방법 |
EP0323896B1 (de) * | 1988-01-07 | 1996-04-17 | Fujitsu Limited | Komplementäre Halbleiteranordnung |
US4951113A (en) * | 1988-11-07 | 1990-08-21 | Xerox Corporation | Simultaneously deposited thin film CMOS TFTs and their method of fabrication |
JPH02137272A (ja) * | 1988-11-17 | 1990-05-25 | Ricoh Co Ltd | Cmos型薄膜トランジスター |
US5012315A (en) * | 1989-01-09 | 1991-04-30 | Regents Of University Of Minnesota | Split-gate field effect transistor |
US5124769A (en) * | 1990-03-02 | 1992-06-23 | Nippon Telegraph And Telephone Corporation | Thin film transistor |
JPH04241466A (ja) * | 1991-01-16 | 1992-08-28 | Casio Comput Co Ltd | 電界効果型トランジスタ |
JP2572003B2 (ja) * | 1992-03-30 | 1997-01-16 | 三星電子株式会社 | 三次元マルチチャンネル構造を有する薄膜トランジスタの製造方法 |
-
1991
- 1991-11-29 DE DE69128876T patent/DE69128876T2/de not_active Expired - Lifetime
- 1991-11-29 EP EP91311142A patent/EP0488801B1/de not_active Expired - Lifetime
- 1991-11-30 KR KR1019910021949A patent/KR950003943B1/ko not_active IP Right Cessation
-
1995
- 1995-02-22 US US08/392,621 patent/US5528056A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5528056A (en) | 1996-06-18 |
KR950003943B1 (ko) | 1995-04-21 |
KR920010957A (ko) | 1992-06-27 |
DE69128876D1 (de) | 1998-03-12 |
EP0488801B1 (de) | 1998-02-04 |
EP0488801A1 (de) | 1992-06-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |