DE69008386T2 - Dünnschichttransistor. - Google Patents

Dünnschichttransistor.

Info

Publication number
DE69008386T2
DE69008386T2 DE69008386T DE69008386T DE69008386T2 DE 69008386 T2 DE69008386 T2 DE 69008386T2 DE 69008386 T DE69008386 T DE 69008386T DE 69008386 T DE69008386 T DE 69008386T DE 69008386 T2 DE69008386 T2 DE 69008386T2
Authority
DE
Germany
Prior art keywords
thin film
film transistor
transistor
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69008386T
Other languages
English (en)
Other versions
DE69008386D1 (de
Inventor
Hiroyuki Ikeda
Teruo Uchida
Osamu Shimada
Takahiro Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
International Business Machines Corp
Original Assignee
Toshiba Corp
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, International Business Machines Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69008386D1 publication Critical patent/DE69008386D1/de
Publication of DE69008386T2 publication Critical patent/DE69008386T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
    • H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
DE69008386T 1989-02-17 1990-02-13 Dünnschichttransistor. Expired - Fee Related DE69008386T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1038069A JP2839529B2 (ja) 1989-02-17 1989-02-17 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
DE69008386D1 DE69008386D1 (de) 1994-06-01
DE69008386T2 true DE69008386T2 (de) 1994-11-24

Family

ID=12515202

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69008386T Expired - Fee Related DE69008386T2 (de) 1989-02-17 1990-02-13 Dünnschichttransistor.

Country Status (5)

Country Link
US (1) US5101242A (de)
EP (1) EP0383743B1 (de)
JP (1) JP2839529B2 (de)
CA (1) CA2010298C (de)
DE (1) DE69008386T2 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004284367A (ja) * 1997-08-29 2004-10-14 Seiko Epson Corp プリンタ
JPH11147322A (ja) * 1997-08-29 1999-06-02 Seiko Epson Corp プリンタ
US6180495B1 (en) * 1998-04-03 2001-01-30 Motorola, Inc. Silicon carbide transistor and method therefor
KR100583421B1 (ko) * 2004-01-29 2006-05-24 실리콘 디스플레이 (주) 유기 발광 다이오드에 사용하는 화소 회로 및 그를이용하는 표시장치
US7655127B2 (en) * 2006-11-27 2010-02-02 3M Innovative Properties Company Method of fabricating thin film transistor
US20100158875A1 (en) * 2006-12-18 2010-06-24 University Of Pittsburgh - Of The Commonwealth System Of Higher Education Muscle derived cells for the treatment of gastro-esophageal pathologies and methods of making and using the same
JP5311957B2 (ja) * 2007-10-23 2013-10-09 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP5311955B2 (ja) * 2007-11-01 2013-10-09 株式会社半導体エネルギー研究所 表示装置の作製方法
TWI481029B (zh) 2007-12-03 2015-04-11 半導體能源研究所股份有限公司 半導體裝置
US7786485B2 (en) 2008-02-29 2010-08-31 Semicondutor Energy Laboratory Co., Ltd. Thin-film transistor and display device
US7812348B2 (en) * 2008-02-29 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and display device
US7968880B2 (en) 2008-03-01 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device
JP5411528B2 (ja) 2008-03-18 2014-02-12 株式会社半導体エネルギー研究所 薄膜トランジスタ及び表示装置
US7821012B2 (en) * 2008-03-18 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP5416460B2 (ja) * 2008-04-18 2014-02-12 株式会社半導体エネルギー研究所 薄膜トランジスタおよび薄膜トランジスタの作製方法
KR101455317B1 (ko) * 2008-04-18 2014-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터 및 그 제작 방법
WO2009128553A1 (en) * 2008-04-18 2009-10-22 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same
US8053294B2 (en) 2008-04-21 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film
US7998801B2 (en) 2008-04-25 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor having altered semiconductor layer
JP5436017B2 (ja) * 2008-04-25 2014-03-05 株式会社半導体エネルギー研究所 半導体装置
US8049215B2 (en) * 2008-04-25 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8039842B2 (en) * 2008-05-22 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device including thin film transistor
EP2291856A4 (de) * 2008-06-27 2015-09-23 Semiconductor Energy Lab Dünnfilmtransistor
KR101602252B1 (ko) * 2008-06-27 2016-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터, 반도체장치 및 전자기기
US9000441B2 (en) * 2008-08-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US8283667B2 (en) 2008-09-05 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP5498762B2 (ja) * 2008-11-17 2014-05-21 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
US8436350B2 (en) * 2009-01-30 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using an oxide semiconductor with a plurality of metal clusters
CN103730515B (zh) 2009-03-09 2016-08-17 株式会社半导体能源研究所 半导体器件
US9018109B2 (en) * 2009-03-10 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including silicon nitride layer and manufacturing method thereof
JP5888802B2 (ja) 2009-05-28 2016-03-22 株式会社半導体エネルギー研究所 トランジスタを有する装置
KR101836067B1 (ko) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
TWI535028B (zh) * 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
US8299467B2 (en) * 2009-12-28 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and fabrication method thereof
US8476744B2 (en) 2009-12-28 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel including microcrystalline and amorphous semiconductor regions
US9230826B2 (en) 2010-08-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Etching method using mixed gas and method for manufacturing semiconductor device
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI538218B (zh) 2010-09-14 2016-06-11 半導體能源研究所股份有限公司 薄膜電晶體
US8338240B2 (en) 2010-10-01 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor
JP2013125782A (ja) * 2011-12-13 2013-06-24 Hitachi Ltd 酸化物半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5914675A (ja) * 1982-07-16 1984-01-25 Nec Corp 薄膜トランジスタ−
JPS6066864A (ja) * 1983-09-22 1985-04-17 Seiko Instr & Electronics Ltd Ｍｉｓ型薄膜トランジスタ
EP0166261A3 (de) * 1984-06-27 1989-01-11 Energy Conversion Devices, Inc. Statisches Feld induzierte Halbleiteranordnungen
JPS6132471A (ja) * 1984-07-25 1986-02-15 Hitachi Ltd 薄膜トランジスタ
JPS6187371A (ja) * 1984-10-05 1986-05-02 Hitachi Ltd 薄膜半導体装置
JPS6189672A (ja) * 1984-10-09 1986-05-07 Agency Of Ind Science & Technol 薄膜トランジスタ
JPS61125083A (ja) * 1984-11-21 1986-06-12 Hitachi Maxell Ltd 薄膜トランジスタおよびその製造方法
JPS61220369A (ja) * 1985-03-26 1986-09-30 Agency Of Ind Science & Technol 薄膜電界効果素子
JPS62122275A (ja) * 1985-11-22 1987-06-03 Mitsubishi Electric Corp Ｍｉｓ型半導体装置
JPS62282464A (ja) * 1986-05-30 1987-12-08 Seiko Instr & Electronics Ltd 埋込みチヤンネル型薄膜トランジスタ
JPS631072A (ja) * 1986-06-20 1988-01-06 Toshiba Corp 薄膜電界効果トランジスタ
JPS63258072A (ja) * 1987-04-15 1988-10-25 Nec Corp 電界効果トランジスタ

Also Published As

Publication number Publication date
US5101242A (en) 1992-03-31
EP0383743A3 (en) 1990-11-22
EP0383743B1 (de) 1994-04-27
DE69008386D1 (de) 1994-06-01
EP0383743A2 (de) 1990-08-22
CA2010298C (en) 1993-06-29
JP2839529B2 (ja) 1998-12-16
JPH02218166A (ja) 1990-08-30
CA2010298A1 (en) 1990-08-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee