DE68908219T2 - Dünnfilm-Transistor. - Google Patents

Dünnfilm-Transistor.

Info

Publication number
DE68908219T2
DE68908219T2 DE1989608219 DE68908219T DE68908219T2 DE 68908219 T2 DE68908219 T2 DE 68908219T2 DE 1989608219 DE1989608219 DE 1989608219 DE 68908219 T DE68908219 T DE 68908219T DE 68908219 T2 DE68908219 T2 DE 68908219T2
Authority
DE
Germany
Prior art keywords
thin film
film transistor
transistor
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1989608219
Other languages
English (en)
Other versions
DE68908219D1 (de
Inventor
John Batey
Raily V Joshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE68908219D1 publication Critical patent/DE68908219D1/de
Application granted granted Critical
Publication of DE68908219T2 publication Critical patent/DE68908219T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
DE1989608219 1988-03-22 1989-02-25 Dünnfilm-Transistor. Expired - Lifetime DE68908219T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17160588A 1988-03-22 1988-03-22

Publications (2)

Publication Number Publication Date
DE68908219D1 DE68908219D1 (de) 1993-09-16
DE68908219T2 true DE68908219T2 (de) 1994-03-17

Family

ID=22624423

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1989608219 Expired - Lifetime DE68908219T2 (de) 1988-03-22 1989-02-25 Dünnfilm-Transistor.

Country Status (3)

Country Link
EP (1) EP0334052B1 (de)
JP (1) JPH0691108B2 (de)
DE (1) DE68908219T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69121629T2 (de) * 1990-04-27 1997-02-13 Nec Corp Dünnfilmtransistor mit Schottky-Sperrschicht
JP2505815Y2 (ja) * 1990-06-28 1996-08-07 前田建設工業株式会社 後施工アンカ―装置
WO2003087423A1 (de) * 2002-04-15 2003-10-23 Schott Ag Verfahren zur beschichtung von metalloberflächen und substrat mit beschichteter metalloberfläche
SG11202100359SA (en) * 2018-08-11 2021-02-25 Applied Materials Inc Graphene diffusion barrier

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584924A (ja) * 1981-07-01 1983-01-12 Hitachi Ltd 半導体装置の電極形成方法
DE3580192D1 (de) * 1984-06-02 1990-11-29 Fujitsu Ltd Verfahren zum herstellen eines kontaktes fuer eine halbleiteranordnung.
JPS61156885A (ja) * 1984-12-28 1986-07-16 Fujitsu Ltd 半導体装置の製造方法
DE3688758T2 (de) * 1985-04-08 1994-02-10 Hitachi Ltd Dünnfilmtransistor auf isolierendem Substrat.
GB2215126B (en) * 1988-02-19 1990-11-14 Gen Electric Co Plc Process for manufacturing a thin film transistor

Also Published As

Publication number Publication date
DE68908219D1 (de) 1993-09-16
EP0334052A3 (en) 1990-09-19
JPH0691108B2 (ja) 1994-11-14
JPH029136A (ja) 1990-01-12
EP0334052B1 (de) 1993-08-11
EP0334052A2 (de) 1989-09-27

Similar Documents

Publication Publication Date Title
DE68909973D1 (de) Dünnfilmtransistor.
DE69008386D1 (de) Dünnschichttransistor.
DE3881066T2 (de) Dünnschichttransistor.
DE68912799D1 (de) Filmkassette.
DE68912800T2 (de) Filmkassette.
DE68910576T2 (de) Filmkassette.
DE69125886D1 (de) Dünnfilmtransistoren
DE68910249T2 (de) Hochspannungsdünnschichttransistoren.
DE3788134T2 (de) Dünnfilmanordnung.
DE69114984T2 (de) Dünnfilm-Transistor.
DE3785249T2 (de) Dünnfilm-Feldeffekttransistor.
DE3883188D1 (de) Duennfilm-halbleiteranordung.
DE68915288D1 (de) Epitaktischer supraleitender ba-y-cu-o-film.
DE68928497D1 (de) Dünnfilm-Transistormatrix
DE68918370T2 (de) Dünnes Folienhologramm.
DE3779202D1 (de) Amorphe duennfilmtransistoranordnung.
DE3876158D1 (de) Duennfilm-elektrolumineszenzgeraet.
DE69013057T2 (de) Hochspannungsdünnschichttransistor.
NO894128D0 (no) Kompositt-plastfilm.
FI892589A (fi) Plastfilm.
DE68905210T2 (de) Hochstrom-duennfilmtransistor.
DE68908219T2 (de) Dünnfilm-Transistor.
DE68917743D1 (de) Elektrolumineszente Dünnschichtvorrichtung.
ATE89686T1 (de) Duennschichttransistor.
KR920003433U (ko) 박막 트랜지스터

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8330 Complete disclaimer
8330 Complete disclaimer