DE69122148T2 - Dünnschicht-Halbleiterbauelement - Google Patents
Dünnschicht-HalbleiterbauelementInfo
- Publication number
- DE69122148T2 DE69122148T2 DE69122148T DE69122148T DE69122148T2 DE 69122148 T2 DE69122148 T2 DE 69122148T2 DE 69122148 T DE69122148 T DE 69122148T DE 69122148 T DE69122148 T DE 69122148T DE 69122148 T2 DE69122148 T2 DE 69122148T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- film semiconductor
- thin film
- layer
- ohmic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000010409 thin film Substances 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Thin Film Transistor (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2078401A JPH03278469A (ja) | 1990-03-27 | 1990-03-27 | 薄膜半導体装置 |
JP2078402A JPH03278470A (ja) | 1990-03-27 | 1990-03-27 | 薄膜半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69122148D1 DE69122148D1 (de) | 1996-10-24 |
DE69122148T2 true DE69122148T2 (de) | 1997-02-06 |
Family
ID=26419477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69122148T Expired - Fee Related DE69122148T2 (de) | 1990-03-27 | 1991-03-26 | Dünnschicht-Halbleiterbauelement |
Country Status (4)
Country | Link |
---|---|
US (1) | US5150181A (de) |
EP (1) | EP0449585B1 (de) |
AT (1) | ATE143175T1 (de) |
DE (1) | DE69122148T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0449598B1 (de) * | 1990-03-27 | 1996-03-13 | Canon Kabushiki Kaisha | Dünnschicht-Halbleiterbauelement |
US5254480A (en) * | 1992-02-20 | 1993-10-19 | Minnesota Mining And Manufacturing Company | Process for producing a large area solid state radiation detector |
JP3348531B2 (ja) * | 1994-07-08 | 2002-11-20 | ソニー株式会社 | 薄膜トランジスタの水素化方法および薄膜トランジスタの形成方法 |
JPH09270519A (ja) * | 1996-03-31 | 1997-10-14 | Furontetsuku:Kk | 薄膜トランジスタの製造方法 |
JP3082679B2 (ja) | 1996-08-29 | 2000-08-28 | 日本電気株式会社 | 薄膜トランジスタおよびその製造方法 |
KR100537376B1 (ko) * | 1998-12-16 | 2006-03-14 | 엘지.필립스 엘시디 주식회사 | 박막트랜지스터 광센서의 제조방법 |
KR100776514B1 (ko) * | 2000-12-30 | 2007-11-16 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조방법 |
KR20070059559A (ko) * | 2005-12-07 | 2007-06-12 | 삼성전자주식회사 | 표시 장치 및 그 제조 방법 |
KR20110081694A (ko) * | 2010-01-08 | 2011-07-14 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터의 제조 방법 및 표시 장치의 제조 방법 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4522663A (en) * | 1980-09-09 | 1985-06-11 | Sovonics Solar Systems | Method for optimizing photoresponsive amorphous alloys and devices |
US4441113A (en) * | 1981-02-13 | 1984-04-03 | Energy Conversion Devices, Inc. | P-Type semiconductor material having a wide band gap |
JPS5961964A (ja) * | 1982-10-01 | 1984-04-09 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
JPH0614560B2 (ja) * | 1983-03-11 | 1994-02-23 | キヤノン株式会社 | フォトセンサ |
JPS60101940A (ja) * | 1983-11-07 | 1985-06-06 | Ricoh Co Ltd | イメ−ジセンサ |
JPS6129170A (ja) * | 1984-07-19 | 1986-02-10 | Canon Inc | フオトセンサ及びその製造法 |
JPS6213274A (ja) * | 1985-07-11 | 1987-01-22 | Honda Motor Co Ltd | 自動シ−ム溶接装置における軌道修正方法及び軌道修正装置 |
JPH06104370B2 (ja) * | 1985-07-12 | 1994-12-21 | キヤノン株式会社 | 記録装置 |
JPS639157A (ja) * | 1986-06-30 | 1988-01-14 | Canon Inc | 薄膜トランジスタの製造方法 |
JPH0668484B2 (ja) * | 1985-09-25 | 1994-08-31 | 株式会社神戸製鋼所 | ステンレス被覆管の超音波探傷方法 |
JPH0740711B2 (ja) * | 1986-06-20 | 1995-05-01 | キヤノン株式会社 | 光センサの駆動方法及び画像入力装置 |
JPH01137674A (ja) * | 1987-11-25 | 1989-05-30 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ |
-
1991
- 1991-03-26 EP EP91302640A patent/EP0449585B1/de not_active Expired - Lifetime
- 1991-03-26 AT AT91302640T patent/ATE143175T1/de active
- 1991-03-26 DE DE69122148T patent/DE69122148T2/de not_active Expired - Fee Related
- 1991-03-26 US US07/675,280 patent/US5150181A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0449585A1 (de) | 1991-10-02 |
ATE143175T1 (de) | 1996-10-15 |
EP0449585B1 (de) | 1996-09-18 |
US5150181A (en) | 1992-09-22 |
DE69122148D1 (de) | 1996-10-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |