DE69101469D1 - Halbleiterlaser mit SiGe-Einkristallsubstrat. - Google Patents

Halbleiterlaser mit SiGe-Einkristallsubstrat.

Info

Publication number
DE69101469D1
DE69101469D1 DE91305083T DE69101469T DE69101469D1 DE 69101469 D1 DE69101469 D1 DE 69101469D1 DE 91305083 T DE91305083 T DE 91305083T DE 69101469 T DE69101469 T DE 69101469T DE 69101469 D1 DE69101469 D1 DE 69101469D1
Authority
DE
Germany
Prior art keywords
single crystal
semiconductor laser
crystal substrate
sige single
sige
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE91305083T
Other languages
English (en)
Other versions
DE69101469T2 (de
Inventor
Tatsuo Yokotsuka
Masato Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69101469D1 publication Critical patent/DE69101469D1/de
Application granted granted Critical
Publication of DE69101469T2 publication Critical patent/DE69101469T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69101469T 1990-06-05 1991-06-05 Halbleiterlaser mit SiGe-Einkristallsubstrat. Expired - Fee Related DE69101469T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2148288A JPH07120838B2 (ja) 1990-06-05 1990-06-05 半導体発光装置

Publications (2)

Publication Number Publication Date
DE69101469D1 true DE69101469D1 (de) 1994-04-28
DE69101469T2 DE69101469T2 (de) 1994-07-21

Family

ID=15449421

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69101469T Expired - Fee Related DE69101469T2 (de) 1990-06-05 1991-06-05 Halbleiterlaser mit SiGe-Einkristallsubstrat.

Country Status (4)

Country Link
US (1) US5164950A (de)
EP (1) EP0460939B1 (de)
JP (1) JPH07120838B2 (de)
DE (1) DE69101469T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4310571A1 (de) * 1993-03-26 1994-09-29 Daimler Benz Ag Leuchtdiode
DE4310569A1 (de) * 1993-03-26 1994-09-29 Daimler Benz Ag Laserdiode
JPH07231142A (ja) * 1994-02-18 1995-08-29 Mitsubishi Electric Corp 半導体発光素子
JP2001015798A (ja) * 1999-06-29 2001-01-19 Toshiba Corp 半導体発光素子
US8837547B2 (en) * 2011-03-17 2014-09-16 Finisar Corporation Lasers with InGaAs quantum wells with InGaP barrier layers with reduced decomposition
CN110165555A (zh) * 2019-04-28 2019-08-23 西安理工大学 一种基于GexSi1-x可变晶格常数基体的红光半导体激光器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821320A (ja) * 1981-07-29 1983-02-08 Hitachi Ltd 半導体装置とその製法
JPS58191421A (ja) * 1982-05-04 1983-11-08 Nec Corp 化合物半導体成長用基板と化合物半導体の製造方法
JPS5986281A (ja) * 1982-11-09 1984-05-18 Agency Of Ind Science & Technol 可視光半導体レ−ザ
EP0259026B1 (de) * 1986-08-08 1994-04-27 Kabushiki Kaisha Toshiba Doppelheterostruktur-Halbleiterlaser mit streifenförmigem Mesa-Wellenleiter
JPS6381990A (ja) * 1986-09-26 1988-04-12 Tokuzo Sukegawa 発光素子用材料
JPS63197391A (ja) * 1987-02-12 1988-08-16 Hitachi Ltd 半導体レ−ザ装置
FR2620863B1 (fr) * 1987-09-22 1989-12-01 Thomson Csf Dispositif optoelectronique a base de composes iii-v sur substrat silicium
JPH0318273A (ja) * 1989-06-15 1991-01-25 Stanley Electric Co Ltd スイッチング電源装置

Also Published As

Publication number Publication date
US5164950A (en) 1992-11-17
JPH07120838B2 (ja) 1995-12-20
EP0460939A2 (de) 1991-12-11
JPH0439988A (ja) 1992-02-10
EP0460939B1 (de) 1994-03-23
DE69101469T2 (de) 1994-07-21
EP0460939A3 (en) 1992-07-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee