DE68908646D1 - Halbleiterlaser. - Google Patents

Halbleiterlaser.

Info

Publication number
DE68908646D1
DE68908646D1 DE89309284T DE68908646T DE68908646D1 DE 68908646 D1 DE68908646 D1 DE 68908646D1 DE 89309284 T DE89309284 T DE 89309284T DE 68908646 T DE68908646 T DE 68908646T DE 68908646 D1 DE68908646 D1 DE 68908646D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89309284T
Other languages
English (en)
Other versions
DE68908646T2 (de
Inventor
Saburo Yamamoto
Taiji Morimoto
Kazuaki Sasaki
Masaki Kondon
Takahiro Suyama
Masafumi Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE68908646D1 publication Critical patent/DE68908646D1/de
Application granted granted Critical
Publication of DE68908646T2 publication Critical patent/DE68908646T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
DE89309284T 1988-09-14 1989-09-13 Halbleiterlaser. Expired - Fee Related DE68908646T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63230990A JPH0279486A (ja) 1988-09-14 1988-09-14 半導体レーザ素子

Publications (2)

Publication Number Publication Date
DE68908646D1 true DE68908646D1 (de) 1993-09-30
DE68908646T2 DE68908646T2 (de) 1994-01-05

Family

ID=16916507

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89309284T Expired - Fee Related DE68908646T2 (de) 1988-09-14 1989-09-13 Halbleiterlaser.

Country Status (4)

Country Link
US (1) US4984244A (de)
EP (1) EP0359542B1 (de)
JP (1) JPH0279486A (de)
DE (1) DE68908646T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2827326B2 (ja) * 1989-09-27 1998-11-25 住友電気工業株式会社 半導体レーザの製造方法
JPH03256386A (ja) * 1990-03-06 1991-11-15 Hitachi Ltd 半導体レーザ、その製造方法及び光通信システム
JP2547464B2 (ja) * 1990-04-13 1996-10-23 シャープ株式会社 半導体レーザ素子の製造方法
US5202285A (en) * 1990-04-26 1993-04-13 Fujitsu Limited Semiconductor laser having double heterostructure and method of producing same
US5255281A (en) * 1990-04-26 1993-10-19 Fujitsu Limited Semiconductor laser having double heterostructure
JPH0427185A (ja) * 1990-05-22 1992-01-30 Victor Co Of Japan Ltd 屈折率導波型半導体レーザ装置
JPH0474488A (ja) * 1990-07-16 1992-03-09 Mitsubishi Electric Corp 半導体レーザ装置およびその製造方法
US5179040A (en) * 1990-07-16 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor laser device
US5227015A (en) * 1990-07-30 1993-07-13 Matsushita Electric Industrial Co., Ltd. Method of fabricating semiconductor laser
FR2672740B1 (fr) * 1991-02-08 1995-03-31 Alcatel Nv Procede de realisation d'un laser semiconducteur planaire a ruban enterre.
JPH04317384A (ja) * 1991-04-16 1992-11-09 Mitsubishi Electric Corp 半導体発光装置
JPH05167191A (ja) * 1991-12-18 1993-07-02 Furukawa Electric Co Ltd:The 埋め込み型半導体レーザ素子
US5362675A (en) * 1991-12-24 1994-11-08 Samsung Electronics Co., Ltd. Manufacturing method of laser diode and laser diode array
JP3424941B2 (ja) * 1992-04-01 2003-07-07 浜松ホトニクス株式会社 パルス光源装置
JP2823476B2 (ja) * 1992-05-14 1998-11-11 三菱電機株式会社 半導体レーザおよびその製造方法
US5416790A (en) * 1992-11-06 1995-05-16 Sanyo Electric Co., Ltd. Semiconductor laser with a self-sustained pulsation
JP2833952B2 (ja) * 1992-12-21 1998-12-09 三菱電機株式会社 半導体レーザ
US5441912A (en) * 1993-07-28 1995-08-15 The Furukawa Electric Co., Ltd. Method of manufacturing a laser diode
JP2000244059A (ja) * 1999-02-23 2000-09-08 Matsushita Electric Ind Co Ltd 半導体レーザ装置
EP1134858A1 (de) * 2000-03-06 2001-09-19 Agilent Technologies Inc. a Delaware Corporation Halbleitervorrichtung mit vergrabener Mesa
GB2407434A (en) * 2003-10-24 2005-04-27 Sharp Kk Vcsel
JP6551678B2 (ja) * 2015-10-29 2019-07-31 セイコーエプソン株式会社 発光装置およびプロジェクター
JP6897928B2 (ja) * 2016-01-14 2021-07-07 住友電工デバイス・イノベーション株式会社 光半導体素子の製造方法および光半導体素子
WO2019193679A1 (ja) * 2018-04-04 2019-10-10 三菱電機株式会社 半導体レーザおよびその製造方法
US20210273414A1 (en) * 2018-07-31 2021-09-02 Mitsubishi Electric Corporation Method for manufacturing semiconductor laser device, and semiconductor laser device
WO2020105095A1 (ja) * 2018-11-19 2020-05-28 三菱電機株式会社 光半導体装置および光半導体装置の製造方法
JP6942261B1 (ja) * 2020-01-28 2021-09-29 三菱電機株式会社 光半導体装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948976A (ja) * 1982-09-14 1984-03-21 Nec Corp 半導体レ−ザ
US4566171A (en) * 1983-06-20 1986-01-28 At&T Bell Laboratories Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices
JPH0766994B2 (ja) * 1985-02-19 1995-07-19 シャープ株式会社 半導体レーザ素子
JPS61284987A (ja) * 1985-06-10 1986-12-15 Sharp Corp 半導体レ−ザ素子
JPS62142387A (ja) * 1985-12-17 1987-06-25 Furukawa Electric Co Ltd:The 半導体レ−ザ
US4792958A (en) * 1986-02-28 1988-12-20 Kabushiki Kaisha Toshiba Semiconductor laser with mesa stripe waveguide structure
EP0264225B1 (de) * 1986-10-07 1994-01-19 Sharp Kabushiki Kaisha Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben
JPS63150985A (ja) * 1986-12-15 1988-06-23 Sharp Corp 半導体レ−ザ
JPS63164484A (ja) * 1986-12-26 1988-07-07 Sharp Corp 半導体レ−ザ素子

Also Published As

Publication number Publication date
EP0359542A2 (de) 1990-03-21
JPH0279486A (ja) 1990-03-20
EP0359542A3 (en) 1990-08-16
EP0359542B1 (de) 1993-08-25
DE68908646T2 (de) 1994-01-05
US4984244A (en) 1991-01-08

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Free format text: YAMAMOTO, SABURO, UDA-GUN NARA-KEN, JP MORIMOTO, TAIJI, NARA-SHI NARA-KEN, JP SASAKI, KAZUAKI, YAO-SHI OSAKA, JP KONDO, MASAKI, NARA-SHI NARA-KEN, JP SUYAMA, TAKAHIRO, TENRI-SHI NARA-KEN, JP KONDO, MASAFUMI, NARA-SHI NARA-KEN, JP

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee