DE68912429D1 - Halbleiterlaser-Vielfachanordnungen. - Google Patents

Halbleiterlaser-Vielfachanordnungen.

Info

Publication number
DE68912429D1
DE68912429D1 DE89306930T DE68912429T DE68912429D1 DE 68912429 D1 DE68912429 D1 DE 68912429D1 DE 89306930 T DE89306930 T DE 89306930T DE 68912429 T DE68912429 T DE 68912429T DE 68912429 D1 DE68912429 D1 DE 68912429D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser arrays
arrays
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE89306930T
Other languages
English (en)
Other versions
DE68912429T2 (de
Inventor
Robert L Thornton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE68912429D1 publication Critical patent/DE68912429D1/de
Publication of DE68912429T2 publication Critical patent/DE68912429T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE68912429T 1988-07-08 1989-07-07 Halbleiterlaser-Vielfachanordnungen. Expired - Lifetime DE68912429T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/216,929 US4870652A (en) 1988-07-08 1988-07-08 Monolithic high density arrays of independently addressable semiconductor laser sources

Publications (2)

Publication Number Publication Date
DE68912429D1 true DE68912429D1 (de) 1994-03-03
DE68912429T2 DE68912429T2 (de) 1994-06-16

Family

ID=22809030

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68912429T Expired - Lifetime DE68912429T2 (de) 1988-07-08 1989-07-07 Halbleiterlaser-Vielfachanordnungen.

Country Status (4)

Country Link
US (1) US4870652A (de)
EP (1) EP0350327B1 (de)
JP (1) JPH07105571B2 (de)
DE (1) DE68912429T2 (de)

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US5164797A (en) * 1988-06-17 1992-11-17 Xerox Corporation Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser
US5306699A (en) * 1988-08-31 1994-04-26 Superconductor Technologies, Inc. Reactor vessel for manufacture of superconducting films
US6324120B2 (en) 1990-04-18 2001-11-27 Rambus Inc. Memory device having a variable data output length
ES2103829T3 (es) * 1990-11-21 1997-10-01 Polaroid Corp Un procedimiento de impresion.
EP0511335B1 (de) * 1990-11-21 1995-03-08 Polaroid Corporation Druckgerät
US5216263A (en) * 1990-11-29 1993-06-01 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays
US5062115A (en) * 1990-12-28 1991-10-29 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays
JPH0773134B2 (ja) * 1991-02-28 1995-08-02 富士ゼロックス株式会社 マルチビーム半導体レーザーアレイ及びマルチビームレーザープリンター
US5140605A (en) * 1991-06-27 1992-08-18 Xerox Corporation Thermally stabilized diode laser structure
JPH05152683A (ja) * 1991-06-28 1993-06-18 Fuji Xerox Co Ltd マルチビーム半導体レーザーアレイ
US5208823A (en) * 1991-09-03 1993-05-04 Applied Solar Energy Corporation Optically isolated laser diode array
US5619488A (en) * 1991-09-07 1997-04-08 Fuji Xerox Co., Ltd. Information recording device
EP0541460A3 (en) * 1991-11-04 1994-05-18 Eastman Kodak Co Multiple beam laser printer
CA2077813C (en) * 1991-12-20 1998-07-28 Thomas L. Paoli Apparatus and method for spot position control in an output device employing a linear array of light sources
CA2091302A1 (en) * 1992-03-11 1993-09-12 Ichiro Yoshida Semiconductor laser and process for fabricating the same
US5305022A (en) * 1992-03-24 1994-04-19 Fuji Xerox Co., Ltd. Interlaced multi-beam scanning type recording apparatus
US5465265A (en) * 1992-06-24 1995-11-07 Fuji Xerox Co., Ltd. Multi-beam laser light source and multi-beam semiconductor laser array
US5497181A (en) * 1992-06-29 1996-03-05 Xerox Corporation Dynamic control of individual spot exposure in an optical output device
US5412678A (en) * 1992-09-22 1995-05-02 Xerox Corporation Multi-beam, orthogonally-polarized emitting monolithic quantum well lasers
US5513200A (en) * 1992-09-22 1996-04-30 Xerox Corporation Monolithic array of independently addressable diode lasers
JP2863678B2 (ja) * 1992-09-28 1999-03-03 三菱電機株式会社 半導体レーザ装置及びその製造方法
US5745153A (en) * 1992-12-07 1998-04-28 Eastman Kodak Company Optical means for using diode laser arrays in laser multibeam printers and recorders
US5305412A (en) * 1992-12-14 1994-04-19 Xerox Corporation Semiconductor diode optical switching arrays utilizing low-loss, passive waveguides
CA2155310A1 (en) * 1993-02-03 1994-08-18 Frank C. Gibeau Methods and apparatus for image projection
JPH06326419A (ja) * 1993-04-20 1994-11-25 Xerox Corp モノリシック半導体発光アレイ
US5324387A (en) * 1993-05-07 1994-06-28 Xerox Corporation Method of fabricating asymmetric closely-spaced multiple diode lasers
US5360761A (en) * 1993-05-07 1994-11-01 Xerox Corporation Method of fabricating closely spaced dual diode lasers
US5764273A (en) * 1993-08-27 1998-06-09 Xerox Corporation Spot position control using a linear array of light valves
US5465264A (en) * 1993-11-22 1995-11-07 Xerox Corporation Electronic simulation for compensating laser diode thermal effects
US5402436A (en) * 1993-12-29 1995-03-28 Xerox Corporation Nonmonolithic array structure of multiple beam diode lasers
US5610095A (en) * 1994-08-31 1997-03-11 Lucent Technologies Inc. Monolithically integrated circuits having dielectrically isolated, electrically controlled optical devices and process for fabricating the same
US5717707A (en) * 1995-01-03 1998-02-10 Xerox Corporation Index guided semiconductor laser diode with reduced shunt leakage currents
US5766981A (en) * 1995-01-04 1998-06-16 Xerox Corporation Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD
WO2000052742A1 (en) * 1999-03-01 2000-09-08 Sensors Unlimited Inc. Epitaxially grown p-type diffusion source for photodiode fabrication
US7257141B2 (en) * 2003-07-23 2007-08-14 Palo Alto Research Center Incorporated Phase array oxide-confined VCSELs
US7310358B2 (en) * 2004-12-17 2007-12-18 Palo Alto Research Center Incorporated Semiconductor lasers
US20080025361A1 (en) * 2006-07-19 2008-01-31 Jerman John H Linear diode-laser array with series-connected emitters
DE102007026925A1 (de) * 2007-02-28 2008-09-04 Osram Opto Semiconductors Gmbh Integrierte Trapezlaseranordnung und Verfahren zu deren Herstellung
US8995485B2 (en) 2009-02-17 2015-03-31 Trilumina Corp. High brightness pulsed VCSEL sources
US20130223846A1 (en) 2009-02-17 2013-08-29 Trilumina Corporation High speed free-space optical communications
US10244181B2 (en) 2009-02-17 2019-03-26 Trilumina Corp. Compact multi-zone infrared laser illuminator
US10038304B2 (en) 2009-02-17 2018-07-31 Trilumina Corp. Laser arrays for variable optical properties
US8995493B2 (en) 2009-02-17 2015-03-31 Trilumina Corp. Microlenses for multibeam arrays of optoelectronic devices for high frequency operation
US8259770B2 (en) * 2009-10-11 2012-09-04 Hewlett-Packard Indigo B.V. Laser array
US8979338B2 (en) 2009-12-19 2015-03-17 Trilumina Corp. System for combining laser array outputs into a single beam carrying digital data
EP2517321B1 (de) * 2009-12-19 2021-04-14 Lumentum Operations LLC System zur kombination von laserarrays für digitalausgaben
US9573385B2 (en) 2010-03-18 2017-02-21 Koninklijke Philips N.V. Printing apparatus and method for controlling a printing apparatus
US11095365B2 (en) 2011-08-26 2021-08-17 Lumentum Operations Llc Wide-angle illuminator module
JP6094043B2 (ja) 2012-03-16 2017-03-15 三菱電機株式会社 半導体レーザ素子

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US4474422A (en) * 1979-11-13 1984-10-02 Canon Kabushiki Kaisha Optical scanning apparatus having an array of light sources
US4378255A (en) * 1981-05-06 1983-03-29 University Of Illinois Foundation Method for producing integrated semiconductor light emitter
US4461007A (en) * 1982-01-08 1984-07-17 Xerox Corporation Injection lasers with short active regions
US4445125A (en) * 1982-04-19 1984-04-24 Xerox Corporation Diode laser array system for printing and copying applications
US4731789A (en) * 1985-05-13 1988-03-15 Xerox Corporation Clad superlattice semiconductor laser
US4706255A (en) * 1985-05-20 1987-11-10 Xerox Corporation Phased array semiconductor laser with preferred emission in the fundamental supermode
JPS6214488A (ja) * 1985-07-12 1987-01-23 Hitachi Ltd 半導体レ−ザおよびその製造方法
JPH07107948B2 (ja) * 1985-12-12 1995-11-15 ゼロツクス コ−ポレ−シヨン 非コ−ヒレントな光非結合レ−ザアレイ
US4727557A (en) * 1985-12-30 1988-02-23 Xerox Corporation Phased array semiconductor lasers fabricated from impurity induced disordering
DE3751535T2 (de) * 1986-07-25 1996-02-22 Mitsubishi Electric Corp Halbleiterlaser.
US4771010A (en) * 1986-11-21 1988-09-13 Xerox Corporation Energy beam induced layer disordering (EBILD)

Also Published As

Publication number Publication date
EP0350327B1 (de) 1994-01-19
DE68912429T2 (de) 1994-06-16
EP0350327A2 (de) 1990-01-10
JPH0239583A (ja) 1990-02-08
EP0350327A3 (en) 1990-08-29
JPH07105571B2 (ja) 1995-11-13
US4870652A (en) 1989-09-26

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Legal Events

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