DE3688002D1 - Halbleiter-laser. - Google Patents

Halbleiter-laser.

Info

Publication number
DE3688002D1
DE3688002D1 DE8686304023T DE3688002T DE3688002D1 DE 3688002 D1 DE3688002 D1 DE 3688002D1 DE 8686304023 T DE8686304023 T DE 8686304023T DE 3688002 T DE3688002 T DE 3688002T DE 3688002 D1 DE3688002 D1 DE 3688002D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686304023T
Other languages
English (en)
Other versions
DE3688002T2 (de
Inventor
Robert D Burnham
Thomas L Paoli
Donald R Scifres
William Streifer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE3688002D1 publication Critical patent/DE3688002D1/de
Publication of DE3688002T2 publication Critical patent/DE3688002T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE8686304023T 1985-05-31 1986-05-27 Halbleiter-laser. Expired - Fee Related DE3688002T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/739,805 US4694459A (en) 1985-05-31 1985-05-31 Hybrid gain/index guided semiconductor lasers and array lasers

Publications (2)

Publication Number Publication Date
DE3688002D1 true DE3688002D1 (de) 1993-04-22
DE3688002T2 DE3688002T2 (de) 1993-07-22

Family

ID=24973844

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686304023T Expired - Fee Related DE3688002T2 (de) 1985-05-31 1986-05-27 Halbleiter-laser.

Country Status (4)

Country Link
US (1) US4694459A (de)
EP (1) EP0203810B1 (de)
JP (1) JPH0728087B2 (de)
DE (1) DE3688002T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5136601A (en) * 1984-11-19 1992-08-04 Hitachi, Ltd. Semiconductor laser
JPS6257275A (ja) * 1985-09-06 1987-03-12 Sharp Corp 半導体レ−ザアレイ装置
US4791648A (en) * 1987-02-04 1988-12-13 Amoco Corporation Laser having a substantially planar waveguide
EP0280304A3 (de) * 1987-02-27 1989-07-26 Siemens Aktiengesellschaft Halbleiterlaseranordnung
DE3727546A1 (de) * 1987-08-18 1989-03-02 Siemens Ag Lichtverstaerker mit ringfoermig gefuehrter strahlung, insbesondere ringlaser-diode
US4831629A (en) * 1987-09-01 1989-05-16 Xerox Corporation Incoherent, optically coupled laser arrays with increased spectral width
US4985897A (en) * 1988-10-07 1991-01-15 Trw Inc. Semiconductor laser array having high power and high beam quality
US5206185A (en) * 1988-12-29 1993-04-27 Sharp Kabushiki Kaisha Semiconductor laser device
US5287376A (en) * 1992-12-14 1994-02-15 Xerox Corporation Independently addressable semiconductor diode lasers with integral lowloss passive waveguides
JP3573475B2 (ja) * 1993-12-01 2004-10-06 富士写真フイルム株式会社 レーザーダイオードポンピング固体レーザー
JPH0940052A (ja) * 1995-07-28 1997-02-10 Mamoru Kamo 卵包装容器
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
JP2001284732A (ja) * 2000-03-31 2001-10-12 Matsushita Electric Ind Co Ltd 多波長レーザ発光装置、当該装置に用いられる半導体レーザアレイ素子及び当該半導体レーザアレイ素子の製造方法
US7269195B2 (en) * 2002-03-04 2007-09-11 Quintessence Photonics Corporation Laser diode with an amplification section that has a varying index of refraction
DE102008058436B4 (de) * 2008-11-21 2019-03-07 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaserchip
DE102010020625B4 (de) * 2010-05-14 2024-02-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines kantenemittierenden Halbleiterlasers
FR2991112B1 (fr) * 2012-05-25 2015-02-20 Thales Sa Laser semiconducteur optimise
US10658813B2 (en) * 2017-06-09 2020-05-19 Nlight, Inc. Low divergence high brightness broad area lasers
WO2019067455A1 (en) * 2017-09-28 2019-04-04 Masseta Technologies Llc LASER ARCHITECTURES USING QUANTUM WELL MIX TECHNIQUES
DE102020108941B4 (de) * 2020-03-31 2022-05-25 Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik Diodenlaser mit verrringerter Strahldivergenz
DE102020125719A1 (de) * 2020-10-01 2022-04-07 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauteil mit strukturierter anschlussfläche und verfahren zum betreiben eines bauteils

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US31806A (en) * 1861-03-26 Chukjsr
GB1557072A (en) * 1976-10-13 1979-12-05 Standard Telephones Cables Ltd Stripe lears
JPS54115088A (en) * 1978-02-28 1979-09-07 Nec Corp Double hetero junction laser element of stripe type
US4219785A (en) * 1978-06-26 1980-08-26 Xerox Corporation Optical beam scanning by phase delays
US4369513A (en) * 1979-11-09 1983-01-18 Hitachi, Ltd. Semiconductor laser device
JPS57170584A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Semiconductor laser device
US4475200A (en) * 1981-12-03 1984-10-02 Rockwell International Corporation Semiconductor laser beam scanner
US4594718A (en) * 1983-02-01 1986-06-10 Xerox Corporation Combination index/gain guided semiconductor lasers

Also Published As

Publication number Publication date
EP0203810A3 (en) 1988-06-29
JPH0728087B2 (ja) 1995-03-29
JPS61278189A (ja) 1986-12-09
DE3688002T2 (de) 1993-07-22
US4694459A (en) 1987-09-15
EP0203810B1 (de) 1993-03-17
EP0203810A2 (de) 1986-12-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee