DE3688943D1 - Halbleiterlaservorrichtung. - Google Patents

Halbleiterlaservorrichtung.

Info

Publication number
DE3688943D1
DE3688943D1 DE86303044T DE3688943T DE3688943D1 DE 3688943 D1 DE3688943 D1 DE 3688943D1 DE 86303044 T DE86303044 T DE 86303044T DE 3688943 T DE3688943 T DE 3688943T DE 3688943 D1 DE3688943 D1 DE 3688943D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE86303044T
Other languages
English (en)
Other versions
DE3688943T2 (de
Inventor
Taiji Morimoto
Mototaka Taneya
Hiroshi Hayashi
Saburo Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8788185A external-priority patent/JPS61245592A/ja
Priority claimed from JP9040085A external-priority patent/JPS61247086A/ja
Priority claimed from JP16322185A external-priority patent/JPS6222496A/ja
Priority claimed from JP16339485A external-priority patent/JPS6223189A/ja
Priority claimed from JP16339985A external-priority patent/JPS6223190A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3688943D1 publication Critical patent/DE3688943D1/de
Publication of DE3688943T2 publication Critical patent/DE3688943T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE86303044T 1985-04-23 1986-04-22 Halbleiterlaservorrichtung. Expired - Fee Related DE3688943T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP8788185A JPS61245592A (ja) 1985-04-23 1985-04-23 半導体レ−ザ素子
JP9040085A JPS61247086A (ja) 1985-04-24 1985-04-24 半導体レ−ザ素子
JP16322185A JPS6222496A (ja) 1985-07-22 1985-07-22 半導体レ−ザ素子
JP16339485A JPS6223189A (ja) 1985-07-23 1985-07-23 半導体レ−ザ素子
JP16339985A JPS6223190A (ja) 1985-07-23 1985-07-23 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
DE3688943D1 true DE3688943D1 (de) 1993-10-07
DE3688943T2 DE3688943T2 (de) 1993-12-16

Family

ID=27525308

Family Applications (1)

Application Number Title Priority Date Filing Date
DE86303044T Expired - Fee Related DE3688943T2 (de) 1985-04-23 1986-04-22 Halbleiterlaservorrichtung.

Country Status (3)

Country Link
US (1) US4819245A (de)
EP (1) EP0199588B1 (de)
DE (1) DE3688943T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5087587A (en) * 1986-02-13 1992-02-11 Sharp Kabushiki Kaisha Epitaxial growth process for the production of a window semiconductor laser
JPS62282483A (ja) * 1986-05-30 1987-12-08 Sharp Corp 半導体レ−ザアレイ装置
US4946802A (en) * 1986-05-31 1990-08-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device fabricating method
JPH0614575B2 (ja) * 1987-07-10 1994-02-23 シャープ株式会社 半導体レーザ素子
JPH0695589B2 (ja) * 1988-12-29 1994-11-24 シャープ株式会社 半導体レーザ素子の製造方法
US5206185A (en) * 1988-12-29 1993-04-27 Sharp Kabushiki Kaisha Semiconductor laser device
EP0395436B1 (de) * 1989-04-28 1997-09-10 Sharp Kabushiki Kaisha Halbleiterlaser, Halbleiter-Wafer und Verfahren zur Herstellung derselben
US5038185A (en) * 1989-11-30 1991-08-06 Xerox Corporation Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors
JP2002141611A (ja) * 2000-08-24 2002-05-17 Fuji Photo Film Co Ltd 半導体発光素子およびその製造方法
JP3804485B2 (ja) * 2001-08-02 2006-08-02 ソニー株式会社 半導体レーザー素子の製造方法
EP2387081B1 (de) * 2010-05-11 2015-09-30 Samsung Electronics Co., Ltd. Lichtemittierende Halbleitervorrichtung und Verfahren zu ihrer Herstellung
US9290618B2 (en) 2011-08-05 2016-03-22 Sabic Global Technologies B.V. Polycarbonate compositions having enhanced optical properties, methods of making and articles comprising the polycarbonate compositions
CN104205376B (zh) 2012-02-03 2018-04-27 沙特基础全球技术有限公司 发光二极管器件及用于生产其的包括转换材料化学的方法
WO2013130610A1 (en) 2012-02-29 2013-09-06 Sabic Innovative Plastics Ip B.V. Polycarbonate compositions containing conversions material chemistry and having enhanced optical properties, methods of making and articles comprising the same
WO2014066784A1 (en) 2012-10-25 2014-05-01 Sabic Innovative Plastics Ip B.V. Light emitting diode devices, method of manufacture, uses thereof
WO2014186548A1 (en) 2013-05-16 2014-11-20 Sabic Innovative Plastics Ip B.V. Branched polycarbonate compositions having conversion material chemistry and articles thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1150388A (en) * 1982-04-29 1983-07-19 Frank L. Weichman High power diode lasers
US4523317A (en) * 1982-10-29 1985-06-11 Rca Corporation Semiconductor laser with reduced absorption at a mirror facet

Also Published As

Publication number Publication date
EP0199588A2 (de) 1986-10-29
EP0199588B1 (de) 1993-09-01
DE3688943T2 (de) 1993-12-16
EP0199588A3 (en) 1988-01-13
US4819245A (en) 1989-04-04

Similar Documents

Publication Publication Date Title
DE3687329D1 (de) Halbleiterlaser-vorrichtung.
DE3584702D1 (de) Halbleiterlaservorrichtung.
DE3584330D1 (de) Halbleiterlaservorrichtung.
DE3787769D1 (de) Halbleiterlaservorrichtung.
DE3676867D1 (de) Halbleiterlaser.
DE3650012D1 (de) Halbleitervorrichtung.
DE3685466D1 (de) Halbleiterlaser-vorrichtung.
NL189326C (nl) Halfgeleiderinrichting.
DE3681799D1 (de) Halbleiter-bearbeitungseinrichtung.
DE3587748D1 (de) Halbleiterlaseranordnung.
DE3750995D1 (de) Halbleiterlaservorrichtung.
DE3786339D1 (de) Halbleiterlaservorrichtung.
DE3688064D1 (de) Halbleitervorrichtung.
DE3674959D1 (de) Halbleiterlaser.
NL194185B (nl) Halfgeleiderlaserinrichting.
DE3687102D1 (de) Halbleiterlaser.
DE3688002D1 (de) Halbleiter-laser.
DE3680223D1 (de) Halbleiterlaser-vorrichtung.
DE3688943D1 (de) Halbleiterlaservorrichtung.
DE3789832D1 (de) Halbleiterlaser-Vorrichtung.
DE3650379D1 (de) Halbleiterlaservorrichtung.
DE3776186D1 (de) Halbleiterlaser-vorrichtung.
DE3688017D1 (de) Halbleiterlaser-vorrichtung.
DE3668099D1 (de) Laserhalbleiteranordnung.
DE3581076D1 (de) Halbleiterlaser-vorrichtungen.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee