DE3787769D1 - Halbleiterlaservorrichtung. - Google Patents

Halbleiterlaservorrichtung.

Info

Publication number
DE3787769D1
DE3787769D1 DE87306520T DE3787769T DE3787769D1 DE 3787769 D1 DE3787769 D1 DE 3787769D1 DE 87306520 T DE87306520 T DE 87306520T DE 3787769 T DE3787769 T DE 3787769T DE 3787769 D1 DE3787769 D1 DE 3787769D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE87306520T
Other languages
English (en)
Other versions
DE3787769T2 (de
Inventor
Yasunori C O Mitsubishi Tokuda
Kenzo C O Mitsubishi Fujiwara
Noriaki C O Mitsubishi Tsukada
Keisuke C O Mitsubishi Kojima
Yoshinori C O Mitsubish Nomura
Teruhito C O Mitsubishi Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61175975A external-priority patent/JPH0634425B2/ja
Priority claimed from JP17597286A external-priority patent/JPS6354794A/ja
Priority claimed from JP61175969A external-priority patent/JPS6332981A/ja
Priority claimed from JP17596686A external-priority patent/JPS6332978A/ja
Priority claimed from JP61175967A external-priority patent/JPH0644662B2/ja
Priority claimed from JP61175965A external-priority patent/JPH0671116B2/ja
Priority claimed from JP61175970A external-priority patent/JPS6332982A/ja
Priority claimed from JP61175971A external-priority patent/JPS6332983A/ja
Priority claimed from JP17597486A external-priority patent/JPS6332986A/ja
Priority claimed from JP17597386A external-priority patent/JPS6332985A/ja
Priority claimed from JP17596886A external-priority patent/JPS6332980A/ja
Priority claimed from JP17628786A external-priority patent/JPS6332989A/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3787769D1 publication Critical patent/DE3787769D1/de
Application granted granted Critical
Publication of DE3787769T2 publication Critical patent/DE3787769T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/0622—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H01S5/0602—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region which is an umpumped part of the active layer
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H01S5/06206—Controlling the frequency of the radiation, e.g. tunable twin-guide lasers [TTG]
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    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06213—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
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    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3409—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers special GRINSCH structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3418—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers using transitions from higher quantum levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE87306520T 1986-07-25 1987-07-23 Halbleiterlaservorrichtung. Expired - Fee Related DE3787769T2 (de)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
JP61175967A JPH0644662B2 (ja) 1986-07-25 1986-07-25 半導体レ−ザ
JP61175965A JPH0671116B2 (ja) 1986-07-25 1986-07-25 半導体レ−ザ
JP61175970A JPS6332982A (ja) 1986-07-25 1986-07-25 半導体レ−ザ
JP61175971A JPS6332983A (ja) 1986-07-25 1986-07-25 半導体レ−ザ
JP61175975A JPH0634425B2 (ja) 1986-07-25 1986-07-25 半導体レ−ザ
JP61175969A JPS6332981A (ja) 1986-07-25 1986-07-25 半導体レ−ザアレイ
JP17596686A JPS6332978A (ja) 1986-07-25 1986-07-25 半導体レ−ザ
JP17596886A JPS6332980A (ja) 1986-07-25 1986-07-25 半導体レ−ザ
JP17597386A JPS6332985A (ja) 1986-07-25 1986-07-25 半導体レ−ザ
JP17597286A JPS6354794A (ja) 1986-07-25 1986-07-25 半導体レ−ザ
JP17597486A JPS6332986A (ja) 1986-07-25 1986-07-25 集積化半導体レ−ザ
JP17628786A JPS6332989A (ja) 1986-07-26 1986-07-26 量子井戸半導体レ−ザ

Publications (2)

Publication Number Publication Date
DE3787769D1 true DE3787769D1 (de) 1993-11-18
DE3787769T2 DE3787769T2 (de) 1994-02-24

Family

ID=27583481

Family Applications (4)

Application Number Title Priority Date Filing Date
DE3751549T Expired - Fee Related DE3751549T2 (de) 1986-07-25 1987-07-23 Halbleiterlaser.
DE3751548T Expired - Fee Related DE3751548T2 (de) 1986-07-25 1987-07-23 Halbleiterlaser.
DE87306520T Expired - Fee Related DE3787769T2 (de) 1986-07-25 1987-07-23 Halbleiterlaservorrichtung.
DE3751535T Expired - Fee Related DE3751535T2 (de) 1986-07-25 1987-07-23 Halbleiterlaser.

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE3751549T Expired - Fee Related DE3751549T2 (de) 1986-07-25 1987-07-23 Halbleiterlaser.
DE3751548T Expired - Fee Related DE3751548T2 (de) 1986-07-25 1987-07-23 Halbleiterlaser.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE3751535T Expired - Fee Related DE3751535T2 (de) 1986-07-25 1987-07-23 Halbleiterlaser.

Country Status (3)

Country Link
US (1) US4817110A (de)
EP (5) EP0254568B1 (de)
DE (4) DE3751549T2 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0280281B1 (de) * 1987-02-27 1994-06-15 Canon Kabushiki Kaisha Halbleiterlaser mit variabler Oszillationswellenlänge
JPS63258090A (ja) * 1987-04-15 1988-10-25 Sharp Corp 半導体レ−ザ装置
GB2212658B (en) * 1987-11-13 1992-02-12 Plessey Co Plc Solid state light source
US4870652A (en) * 1988-07-08 1989-09-26 Xerox Corporation Monolithic high density arrays of independently addressable semiconductor laser sources
EP0361399A3 (de) * 1988-09-28 1990-07-18 Canon Kabushiki Kaisha Halbleiterlaser-Vielfachanordnung, die Laser mit Reflexionsmitteln enthält, die verschiedene Wellenlängen-Selektionseigenschaften haben
US5033053A (en) * 1989-03-30 1991-07-16 Canon Kabushiki Kaisha Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same
US5060235A (en) * 1989-03-31 1991-10-22 Canon Kabushiki Kaisha Semiconductor laser element selectively emitting lights of different wavelengths
DE3934865A1 (de) * 1989-10-19 1991-04-25 Siemens Ag Hochfrequent modulierbarer halbleiterlaser
DE3934998A1 (de) * 1989-10-20 1991-04-25 Standard Elektrik Lorenz Ag Elektrisch wellenlaengenabstimmbarer halbleiterlaser
US5196958A (en) * 1989-10-31 1993-03-23 U.S. Philips Corporation Optical amplifier having gain at two separated wavelengths
JPH03151684A (ja) * 1989-11-08 1991-06-27 Mitsubishi Electric Corp 多波長集積化半導体レーザの製造方法
US5138624A (en) * 1989-11-16 1992-08-11 The Boeing Company Multiwavelength LED and laser diode optical source
FR2656168A1 (fr) * 1989-12-15 1991-06-21 Thomson Csf Laser semiconducteur a puits quantiques modulable en intensite ou en frequence par un modulateur integre.
JP2808562B2 (ja) * 1990-02-27 1998-10-08 キヤノン株式会社 半導体光増幅素子
US5124996A (en) * 1990-03-02 1992-06-23 Canon Kabushiki Kaisha Semiconductor laser element having a plurality of layers emitting lights of different wavelengths, and its driving method
JPH04107976A (ja) * 1990-08-28 1992-04-09 Mitsubishi Electric Corp 半導体レーザ装置
US5224114A (en) * 1990-11-11 1993-06-29 Canon Kabushiki Kaisha Semiconductor laser devices with a plurality of light emitting layers having different bands gaps and methods for driving the same
US5151915A (en) * 1990-12-27 1992-09-29 Xerox Corporation Array and method of operating a modulated solid state laser array with reduced thermal crosstalk
US5126803A (en) * 1991-03-11 1992-06-30 The Boeing Company Broadband quantum well LED
US5200969A (en) * 1991-10-18 1993-04-06 Xerox Corporation Switchable multiple wavelength semiconductor laser
US5214664A (en) * 1991-10-18 1993-05-25 Xerox Corporation Multiple wavelength semiconductor laser
EP0539015B1 (de) * 1991-10-18 1996-10-16 Xerox Corporation Halbleiterlaser zur Aussendung mehrerer Wellenlängen
JPH0696468A (ja) * 1992-09-14 1994-04-08 Canon Inc 光記録再生装置及び半導体レーザアレイ
US5465263A (en) * 1992-12-12 1995-11-07 Xerox Corporation Monolithic, multiple wavelength, dual polarization laser diode arrays
US5287376A (en) * 1992-12-14 1994-02-15 Xerox Corporation Independently addressable semiconductor diode lasers with integral lowloss passive waveguides
DE4326522A1 (de) * 1993-08-06 1995-02-09 Siemens Ag Programmierbares optisches Filter und optische Schaltanordnung
JP3303631B2 (ja) * 1995-01-04 2002-07-22 キヤノン株式会社 半導体量子井戸構造
WO1997013303A1 (fr) 1995-09-29 1997-04-10 Matsushita Electric Industrial Co., Ltd. Laser a semi-conducteurs et disque optique l'utilisant
FR2749447B1 (fr) * 1996-06-04 1998-07-10 France Telecom Dispositif optique a guide de lumiere semi-conducteur, a faisceau emergent de faible divergence, application aux lasers de fabry-perot et a contre-reaction distribuee
US6285698B1 (en) * 1998-09-25 2001-09-04 Xerox Corporation MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer
US6922426B2 (en) * 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US6396861B1 (en) 1999-01-11 2002-05-28 The Furukawa Electric Co., Ltd. N-type modulation-doped multi quantum well semiconductor laser device
WO2000042685A1 (fr) * 1999-01-11 2000-07-20 The Furukawa Electric Co., Ltd. Laser a semi-conducteur, a puits quantiques multiples, a dopage module de type n
GB9912583D0 (en) 1999-05-28 1999-07-28 Arima Optoelectronics Corp A light emitting diode having a two well system with asymmetric tunneling
JP2001332816A (ja) * 2000-05-19 2001-11-30 Fuji Photo Film Co Ltd 半導体レーザ素子
US6461884B1 (en) * 2001-01-05 2002-10-08 Manijeh Razeghi Diode laser
GB2371405B (en) * 2001-01-23 2003-10-15 Univ Glasgow Improvements in or relating to semiconductor lasers
US6834068B2 (en) * 2001-06-29 2004-12-21 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
US20030068125A1 (en) * 2001-09-28 2003-04-10 The Furukawa Electric Co., Ltd. Semiconductor laser device, semiconductor laser module and optical fiber amplifier using the semiconductor laser module
GB2406968B (en) 2003-10-11 2006-12-06 Intense Photonics Ltd Control of output beam divergence in a semiconductor waveguide device
US7736370B2 (en) * 2003-10-21 2010-06-15 Zimmer Spine, Inc. Method for interconnecting longitudinal members extending along a spinal column
US20050105577A1 (en) * 2003-11-13 2005-05-19 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and manufacturing method for the same
US7558305B2 (en) * 2003-12-31 2009-07-07 Wisconsin Alumni Research Foundation Intersubband mid-infrared electroluminescent semiconductor devices
US7403552B2 (en) * 2006-03-10 2008-07-22 Wisconsin Alumni Research Foundation High efficiency intersubband semiconductor lasers
US7457338B2 (en) * 2006-04-19 2008-11-25 Wisconsin Alumni Research Foundation Quantum well lasers with strained quantum wells and dilute nitride barriers

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device
DE3065856D1 (en) * 1979-02-13 1984-01-19 Fujitsu Ltd A semiconductor light emitting device
US4340967A (en) * 1980-06-02 1982-07-20 Bell Telephone Laboratories, Incorporated Semiconductor lasers with stable higher-order modes parallel to the junction plane
JPS5844785A (ja) * 1981-08-27 1983-03-15 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体レ−ザ
JPS58140177A (ja) * 1982-02-16 1983-08-19 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
JPS5929484A (ja) * 1982-08-12 1984-02-16 Fujitsu Ltd 半導体発光装置
JPH07112090B2 (ja) * 1982-12-10 1995-11-29 富士通株式会社 半導体発光装置
US4558449A (en) * 1983-07-08 1985-12-10 At&T Bell Laboratories Semiconductor laser with coupled loss modulator for optical telecommunications
JPS6016484A (ja) * 1983-07-08 1985-01-28 Agency Of Ind Science & Technol 半導体レ−ザ
US4546480A (en) * 1983-08-19 1985-10-08 Xerox Corporation Injection lasers with quantum size effect transparent waveguiding
US4589115A (en) * 1983-09-09 1986-05-13 Xerox Corporation Wavelength tuning of quantum well heterostructure lasers using an external grating
US4577321A (en) * 1983-09-19 1986-03-18 Honeywell Inc. Integrated quantum well lasers for wavelength division multiplexing
JPH0666509B2 (ja) * 1983-12-14 1994-08-24 株式会社日立製作所 分布帰還型半導体レ−ザ装置
JPS60128690A (ja) * 1983-12-15 1985-07-09 Fujitsu Ltd 半導体発光装置
US4671830A (en) * 1984-01-03 1987-06-09 Xerox Corporation Method of controlling the modeling of the well energy band profile by interdiffusion
JPH0632339B2 (ja) * 1984-12-18 1994-04-27 キヤノン株式会社 半導体レ−ザ
JPS61160989A (ja) * 1985-01-09 1986-07-21 Nec Corp 半導体レ−ザアレイ装置とその製造方法
DE3581076D1 (de) * 1985-03-14 1991-02-07 Max Planck Gesellschaft Halbleiterlaser-vorrichtungen.
JP2821822B2 (ja) * 1991-04-09 1998-11-05 日本セメント 株式会社 軽量コンクリートの製造方法

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EP0547043B1 (de) 1995-09-27
EP0547042A2 (de) 1993-06-16
EP0547043A3 (en) 1993-08-11
DE3787769T2 (de) 1994-02-24
DE3751535D1 (de) 1995-10-26
EP0547044B1 (de) 1995-09-27
EP0254568A3 (en) 1988-07-20
DE3751549D1 (de) 1995-11-02
EP0254568B1 (de) 1993-10-13
EP0547044A2 (de) 1993-06-16
EP0547042A3 (en) 1993-08-18
EP0547038A2 (de) 1993-06-16
EP0547043A2 (de) 1993-06-16
EP0547038A3 (en) 1993-08-18
DE3751548T2 (de) 1996-04-11
DE3751549T2 (de) 1996-03-21
DE3751535T2 (de) 1996-02-22
EP0547038B1 (de) 1995-09-20
EP0547044A3 (en) 1993-08-11
US4817110A (en) 1989-03-28
DE3751548D1 (de) 1995-11-02
EP0254568A2 (de) 1988-01-27

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