EP0199588A3 - A semiconductor laser device - Google Patents

A semiconductor laser device Download PDF

Info

Publication number
EP0199588A3
EP0199588A3 EP86303044A EP86303044A EP0199588A3 EP 0199588 A3 EP0199588 A3 EP 0199588A3 EP 86303044 A EP86303044 A EP 86303044A EP 86303044 A EP86303044 A EP 86303044A EP 0199588 A3 EP0199588 A3 EP 0199588A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP86303044A
Other versions
EP0199588A2 (en
EP0199588B1 (en
Inventor
Taiji Morimoto
Mototaka Taneya
Hiroshi Hayashi
Saburo Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8788185A external-priority patent/JPS61245592A/en
Priority claimed from JP9040085A external-priority patent/JPS61247086A/en
Priority claimed from JP16322185A external-priority patent/JPS6222496A/en
Priority claimed from JP16339485A external-priority patent/JPS6223189A/en
Priority claimed from JP16339985A external-priority patent/JPS6223190A/en
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of EP0199588A2 publication Critical patent/EP0199588A2/en
Publication of EP0199588A3 publication Critical patent/EP0199588A3/en
Application granted granted Critical
Publication of EP0199588B1 publication Critical patent/EP0199588B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
EP86303044A 1985-04-23 1986-04-22 A semiconductor laser device Expired - Lifetime EP0199588B1 (en)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP8788185A JPS61245592A (en) 1985-04-23 1985-04-23 Semiconductor laser element
JP87881/85 1985-04-23
JP9040085A JPS61247086A (en) 1985-04-24 1985-04-24 Semiconductor laser element
JP90400/85 1985-04-24
JP163221/85 1985-07-22
JP16322185A JPS6222496A (en) 1985-07-22 1985-07-22 Semiconductor laser element
JP163399/85 1985-07-23
JP16339485A JPS6223189A (en) 1985-07-23 1985-07-23 Semiconductor laser element
JP16339985A JPS6223190A (en) 1985-07-23 1985-07-23 Semiconductor laser element
JP163394/85 1985-07-23

Publications (3)

Publication Number Publication Date
EP0199588A2 EP0199588A2 (en) 1986-10-29
EP0199588A3 true EP0199588A3 (en) 1988-01-13
EP0199588B1 EP0199588B1 (en) 1993-09-01

Family

ID=27525308

Family Applications (1)

Application Number Title Priority Date Filing Date
EP86303044A Expired - Lifetime EP0199588B1 (en) 1985-04-23 1986-04-22 A semiconductor laser device

Country Status (3)

Country Link
US (1) US4819245A (en)
EP (1) EP0199588B1 (en)
DE (1) DE3688943T2 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3703905A1 (en) * 1986-02-13 1987-08-27 Sharp Kk WINDOW SEMICONDUCTOR LASER AND METHOD FOR THE PRODUCTION THEREOF
JPS62282483A (en) * 1986-05-30 1987-12-08 Sharp Corp Semiconductor laser array device
US4946802A (en) * 1986-05-31 1990-08-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device fabricating method
JPH0614575B2 (en) * 1987-07-10 1994-02-23 シャープ株式会社 Semiconductor laser device
JPH0695589B2 (en) * 1988-12-29 1994-11-24 シャープ株式会社 Method for manufacturing semiconductor laser device
US5206185A (en) * 1988-12-29 1993-04-27 Sharp Kabushiki Kaisha Semiconductor laser device
US5042044A (en) * 1989-04-28 1991-08-20 Sharp Kabushiki Kaisha Semiconductor laser device, a semiconductor wafer
US5038185A (en) * 1989-11-30 1991-08-06 Xerox Corporation Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors
JP2002141611A (en) * 2000-08-24 2002-05-17 Fuji Photo Film Co Ltd Semiconductor light emitting element and its fabricating method
JP3804485B2 (en) * 2001-08-02 2006-08-02 ソニー株式会社 Manufacturing method of semiconductor laser element
US8993993B2 (en) * 2010-05-11 2015-03-31 Samsung Electronics Co., Ltd. Semiconductor light emitting device and method for fabricating the same
US9290618B2 (en) 2011-08-05 2016-03-22 Sabic Global Technologies B.V. Polycarbonate compositions having enhanced optical properties, methods of making and articles comprising the polycarbonate compositions
CN104205376B (en) 2012-02-03 2018-04-27 沙特基础全球技术有限公司 LED device and for producing its method for including transition material chemistry
WO2013130610A1 (en) 2012-02-29 2013-09-06 Sabic Innovative Plastics Ip B.V. Polycarbonate compositions containing conversions material chemistry and having enhanced optical properties, methods of making and articles comprising the same
KR101961312B1 (en) 2012-10-25 2019-03-22 사빅 글로벌 테크놀러지스 비.브이. Light emitting diode devices, method of manufacture, uses thereof
US9553244B2 (en) 2013-05-16 2017-01-24 Sabic Global Technologies B.V. Branched polycarbonate compositions having conversion material chemistry and articles thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1150388A (en) * 1982-04-29 1983-07-19 Frank L. Weichman High power diode lasers

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4523317A (en) * 1982-10-29 1985-06-11 Rca Corporation Semiconductor laser with reduced absorption at a mirror facet

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1150388A (en) * 1982-04-29 1983-07-19 Frank L. Weichman High power diode lasers

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS, vol. 42, no. 10, 15th May 1983, pages 853-854, American Institute of Physics, New York, US; M. WADA et al.: "A high-power, single-mode laser with twin-ridge-substrate structure" *
PATENT ABSTRACTS OF JAPAN, vol. 7, no. 190 (E-194)[1335], 19th August 1983; & JP-A-58 91 693 (NIPPON DENKI K.K.) 31-05-1983 *
PATENT ABSTRACTS OF JAPAN, vol. 7, no. 284 (E-217)[1429], 17th December 1983; & JP-A-58 162 088 (SANYO DENKI K.K.) 26-09-1983 *
PATENT ABSTRACTS OF JAPAN, vol. 8, no. 176 (E-260)[1613], 14th August 1984; & JP-A-59 68 988 (NIPPON DENKI K.K.) 19-04-1984 *
PATENT ABSTRACTS OF JAPAN, vol. 8, no. 235 (E-275)[1672], 27th October 1984; & JP-A-59 115 582 (SANYO DENKI K.K.) 04-07-1984 *
PATENT ABSTRACTS OF JAPAN, vol. 9, no. 251 (E-348)[1974], 8th October 1985; & JP-A-60 101 984 (MATSUSHITA DENKI SANGYO K.K.) 06-06-1985 *

Also Published As

Publication number Publication date
US4819245A (en) 1989-04-04
DE3688943D1 (en) 1993-10-07
DE3688943T2 (en) 1993-12-16
EP0199588A2 (en) 1986-10-29
EP0199588B1 (en) 1993-09-01

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